SURFACE ACOUSTIC WAVE RESONATOR AND SURFACE ACOUSTIC WAVE DEVICE
    1.
    发明公开
    SURFACE ACOUSTIC WAVE RESONATOR AND SURFACE ACOUSTIC WAVE DEVICE 审中-公开
    OBERFLÄCHENWELLENRESONATORUNDOBERFLÄCHENWELLENEINRICHTUNG

    公开(公告)号:EP2093880A1

    公开(公告)日:2009-08-26

    申请号:EP07830428.4

    申请日:2007-10-24

    发明人: KIDOH, Hideo

    IPC分类号: H03H9/145 H03H9/25

    CPC分类号: H03H9/02551

    摘要: A low-loss surface acoustic wave resonator which is less affected by spurious responses over a wider temperature range and in which the IDT electrode is protected by formation of a SiO 2 film is provided. A surface acoustic wave resonator (1) includes a rotated Y-cut quartz substrate (2) with a cut angle θ of -53° to -52° and an IDT electrode (3) composed of aluminum or an alloy mainly composed of aluminum formed on the quartz substrate. The propagation direction of surface acoustic waves is within the range of 90° ±5° with respect to the X axis. A SiO 2 film (6) covers the quartz substrate (2) and the IDT electrode (3). The thickness of the IDT electrode (3) is in the range of 6.0% to 6.5% of λ, where λ is the wavelength of surface acoustic waves, and the duty ratio of the IDT electrode (3) is in the range of 0.62 to 0.66.

    摘要翻译: 提供一种低损耗弹性表面波谐振器,其较宽的温度范围内的杂散响应受到较小的影响,并且其中IDT电极通过形成SiO 2膜而被保护。 表面声波谐振器(1)包括旋转的Y切割石英基板(2),切割角度为-53°至-52°,以及由铝构成的IDT电极(3)或主要由铝形成的合金 在石英基板上。 表面声波的传播方向在相对于X轴的90°±5°的范围内。 SiO 2膜(6)覆盖石英基板(2)和IDT电极(3)。 IDT电极(3)的厚度在»的6.0%至6.5%的范围内,其中»是表面声波的波长,并且IDT电极(3)的占空比在0.62至 0.66。