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    SURFACE ACOUSTIC WAVE DEVICE
    1.
    发明公开
    SURFACE ACOUSTIC WAVE DEVICE 审中-公开
    表面声波装置

    公开(公告)号：EP2099129A1

    公开(公告)日：2009-09-09

    申请号：EP07850538.5

    申请日：2007-12-13

    申请人： Murata Manufacturing Co. Ltd.

    发明人： KADOTA, Michio

    IPC分类号： H03H9/145 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H03H9/25

    CPC分类号： H03H9/145 ,  H03H9/02551 ,  H03H9/02574 ,  H03H9/02834

    摘要： A surface acoustic wave device is obtained in which variation in properties caused by temperature change hardly occurs, the reflectivity coefficient per one electrode finger of an IDT is high, and a narrow bandwidth can be easily realized. A surface acoustic wave device (1) which uses a Rayleigh wave as a surface acoustic wave is provided in which an IDT electrode (3) is formed on a piezoelectric substrate (2) composed of quartz having Euler angles of (0°±5°, 0° to 140°, 0°±40°), a piezoelectric film (4) composed of c-axis oriented ZnO is formed so as to cover the IDT electrode (3), and the piezoelectric film (4) has a convex portion formed on a surface thereof corresponding to the thickness of the IDT electrode (3). In the above surface acoustic wave device (1), a Rayleigh wave is used as a surface acoustic wave, the IDT electrode is composed of a metal material primarily including Al, Au, Ta, W, Pt, Cu, Ni, or Mo, and when the wavelength of the surface acoustic wave is represented by λ, the primary metal of the IDT electrode, a normalized thickness of the IDT electrode normalized by the wavelength of the surface acoustic wave, and a normalized thickness of the piezoelectric film normalized by the wavelength of the surface acoustic wave are set within the ranges of each combination shown in the following Table 1.


    Table 1






    Primary metal of IDT electrode
    Normalized thickness of IDT electrode
    Normalized ZnO thickness


    Al
    0.02≤h/λ≤0.2
    0.03≤h/λ≤0.3

    Au
    0.005≤h/λ≤0.2
    0.03≤h/λ≤0.3

    Ta
    0.005≤h/λ≤0.2
    0.03≤h/λ≤0.3

    W
    0.005≤h/λ≤0.2
    0.03≤h/λ≤0.3

    Pt
    0.005≤h/λ≤0.2
    0.03≤h/λ≤0.3

    Cu
    0.02≤h/λ≤0.2
    0.03≤h/λ≤0.3

    Ni
    0.02≤h/λ≤0.2
    0.03≤h/λ≤0.3

    Mo
    0.01≤h/λ≤0.2
    0.03≤h/λ≤0.3

    摘要翻译： 得到了几乎不会发生由温度变化引起的特性变化，IDT的每一个电极指的反射率系数高，并且容易实现窄带宽的表面声波器件。 提供了一种使用瑞利波作为表面声波的表面声波装置（1），其中在由欧拉角为（0°±5°）的石英构成的压电基片（2）上形成IDT电极（3） ，0°〜140°，0°±40°），以覆盖IDT电极（3）的方式形成由c轴取向ZnO构成的压电膜（4），压电膜（4） 在与IDT电极（3）的厚度对应的表面上形成的部分。 在上述声表面波器件（1）中，瑞利波被用作表面声波，IDT电极由主要包括Al，Au，Ta，W，Pt，Cu，Ni或Mo的金属材料组成， 并且当表面声波的波长由λ表示时，IDT电极的主金属，通过表面声波的波长归一化的IDT电极的标准化厚度，以及由标准化的压电膜的归一化厚度 声表面波的波长设定在下表1所示的各组合的范围内。表1 IDT电极的主要金属IDT电极的标准化厚度标准化ZnO厚度Al0.02≤h/λ≤0.20.03≤h/λ≤ 0.3 Au0.005≤h/λ≤0.20.03≤h/λ≤0.3Ta0.005≤h/λ≤0.20.03≤h/λ≤0.3W0.005≤h/λ≤0.20.03≤h/λ≤0.3Pt0.005≤h /λ≤0.20.03≤h/λ≤0.3Cu0.02≤h/λ≤0.20.03≤h/λ≤0.3Ni0.02≤h/λ≤0.20.03≤h/λ≤0.3Mo0.01≤h/ λ≤0.20.03≤h/λ≤0.3

    SURFACE ACOUSTIC WAVE RESONATOR AND SURFACE ACOUSTIC WAVE DEVICE
    2.
    发明公开
    SURFACE ACOUSTIC WAVE RESONATOR AND SURFACE ACOUSTIC WAVE DEVICE 审中-公开
    OBERFLÄCHENWELLENRESONATORUNDOBERFLÄCHENWELLENEINRICHTUNG

    公开(公告)号：EP2093880A1

    公开(公告)日：2009-08-26

    申请号：EP07830428.4

    申请日：2007-10-24

    申请人： Murata Manufacturing Co. Ltd.

    发明人： KIDOH, Hideo

    IPC分类号： H03H9/145 ,  H03H9/25

    CPC分类号： H03H9/02551

    摘要： A low-loss surface acoustic wave resonator which is less affected by spurious responses over a wider temperature range and in which the IDT electrode is protected by formation of a SiO 2 film is provided. A surface acoustic wave resonator (1) includes a rotated Y-cut quartz substrate (2) with a cut angle θ of -53° to -52° and an IDT electrode (3) composed of aluminum or an alloy mainly composed of aluminum formed on the quartz substrate. The propagation direction of surface acoustic waves is within the range of 90° ±5° with respect to the X axis. A SiO 2 film (6) covers the quartz substrate (2) and the IDT electrode (3). The thickness of the IDT electrode (3) is in the range of 6.0% to 6.5% of λ, where λ is the wavelength of surface acoustic waves, and the duty ratio of the IDT electrode (3) is in the range of 0.62 to 0.66.

    摘要翻译： 提供一种低损耗弹性表面波谐振器，其较宽的温度范围内的杂散响应受到较小的影响，并且其中IDT电极通过形成SiO 2膜而被保护。 表面声波谐振器（1）包括旋转的Y切割石英基板（2），切割角度为-53°至-52°，以及由铝构成的IDT电极（3）或主要由铝形成的合金 在石英基板上。 表面声波的传播方向在相对于X轴的90°±5°的范围内。 SiO 2膜（6）覆盖石英基板（2）和IDT电极（3）。 IDT电极（3）的厚度在»的6.0％至6.5％的范围内，其中»是表面声波的波长，并且IDT电极（3）的占空比在0.62至 0.66。

    Surface acoustic wave device
    7.
    发明公开
    Surface acoustic wave device 失效
    表面声波器件

    公开(公告)号：EP0860943A3

    公开(公告)日：2000-01-19

    申请号：EP98400394.7

    申请日：1998-02-19

    申请人： MURATA MANUFACTURING CO., LTD.

    发明人： Fujimoto, Koji ,  Kadota, Michio ,  Yoneda, Toshimaro

    IPC分类号： H03H9/02

    CPC分类号： H03H9/02669 ,  H03H9/02551

    摘要： The surface acoustic wave device (1) includes a quartz rotated Y-cut plate (2) and at least one interdigital transducer (5) disposed on the quartz rotated Y-cut plate. The quartz rotated Y-cut plate has a Euler angle represented by (0, Θ, ϕ). The angle Θ is within a range of about 125°

    摘要翻译： 表面声波装置（1）包括石英旋转Y切割板（2）和至少一个设置在石英旋转Y切割板上的叉指式换能器（5）。 石英旋转Y切割板具有由（0，Θ，φ）表示的欧拉角。 角度θ在约125°<θ<130°的范围内或其等同物内，并且角度φ约为90°。 叉指式换能器由例如 钨或钽。

    Surface acoustic wave device
    8.
    发明公开
    Surface acoustic wave device 失效
    表面声波器件

    公开(公告)号：EP0860943A2

    公开(公告)日：1998-08-26

    申请号：EP98400394.7

    申请日：1998-02-19

    申请人： MURATA MANUFACTURING CO., LTD.

    发明人： Fujimoto, Koji ,  Kadota, Michio ,  Yoneda, Toshimaro

    IPC分类号： H03H9/02

    CPC分类号： H03H9/02669 ,  H03H9/02551

    摘要： The surface acoustic wave device (1) includes a quartz rotated Y-cut plate (2) and at least one interdigital transducer (5) disposed on the quartz rotated Y-cut plate. The quartz rotated Y-cut plate has a Euler angle represented by (0, Θ, φ). The angle Θ is within a range of about 125°

    摘要翻译： 表面声波装置（1）包括石英旋转Y切割板（2）和至少一个设置在石英旋转Y切割板上的叉指式换能器（5）。 石英旋转Y切割板具有由（0，Θ，φ）表示的欧拉角。 角度θ在约125°<θ<130°的范围内或其等同物内，并且角度φ约为90°。 叉指式换能器由例如 钨或钽。

    Quartz crystal for surface acoustic wave device
    9.
    发明公开
    Quartz crystal for surface acoustic wave device 失效
    QuartzkristallfürakustischeOberflächenwellenanordnung。

    公开(公告)号：EP0255361A2

    公开(公告)日：1988-02-03

    申请号：EP87306707.8

    申请日：1987-07-29

    申请人： R.F. MONOLITHICS, INC.

    发明人： Wright, Peter V.

    IPC分类号： H03H9/02

    CPC分类号： H03H9/02551

    摘要： An ST cut quartz crystal for surface acoustic wave device application defined by the Euler angles lambda (λ) equal to substantially 0°, mu (µ) equal to substantially 132.75° and with an acoustic wave propagation direction theta (ϑ) equal to substantially plus or minus 25°.

    摘要翻译： 用于表面声波器件应用的ST切割石英晶体由欧拉角λ（λ）定义为基本上为0°，mu（mu）等于基本上为132.75°，声波传播方向θ（θ）等于基本上加 或零下25度。

    ELECTROACOUSTIC TRANSDUCER WITH IMPROVED SUPPRESSION OF UNWANTED MODES
    10.
    发明公开
    ELECTROACOUSTIC TRANSDUCER WITH IMPROVED SUPPRESSION OF UNWANTED MODES 审中-公开
    电声换能器的改进抑制了不想要的模式

    公开(公告)号：EP3235130A1

    公开(公告)日：2017-10-25

    申请号：EP14812262.5

    申请日：2014-12-16

    申请人： SnapTrack, Inc.

    发明人： YOON, Jiman ,  JÄGER, Philipp Michael

    IPC分类号： H03H9/02

    CPC分类号： H03H9/02559 ,  H03H9/02551 ,  H03H9/02858 ,  H03H9/14544

    摘要： An improved electroacoustic transducer with an improved mode profile is provided. The transducer comprises a transversal velocity profile with a periodic structure and an edge structure flanking the periodic structure. The velocity profile also allows to suppress the SH wave mode. A dielectric material with a periodic structure contributes to the formation of the periodic structure of the velocity profile.

    摘要翻译： 提供了具有改进的模式分布的改进的电声换能器。 换能器包括具有周期性结构的横向速度分布和侧向于周期性结构的边缘结构。 速度曲线还允许抑制SH波模式。 具有周期性结构的电介质材料有助于形成速度分布的周期性结构。