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公开(公告)号:EP0090099A3
公开(公告)日:1985-11-06
申请号:EP82201536
申请日:1982-12-03
IPC分类号: H01L27/02 , H01L27/06 , H03K19/092
CPC分类号: H01L27/0244 , H01L27/0233 , H01L27/075 , H03K19/01806 , H03K19/0915
摘要: In an integrated logic circuit having an inverter transistor with a signal input connected to its control electrode and one or more signal outputs each coupled via a diode to one of its main electrodes an interface or translation transistor is added. Preferably an ISL clamped NPN transistor and a PNP interface transistor are merged together in a single semiconductive isolated island. The two transistors are laterally separated from each other along a semiconductive surface of the island, which also includes one or more metallic elements forming individual Schottky barrier contact diodes with the semiconductive surface. The PNP transistor provides translation between an ISL logic gate and a TTL logic gate. One of the Schottky diodes may be used in combination with the NPN transistor as an active pull down for an output transistor of the TTL logic gate.