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1.发明授权METHOD OF FABRICATION OF AN INTEGRATED CIRCUIT CHIP CONTAINING EEPROM AND CAPACITOR 失效过程执行EEPROM和一个电容含集成电路芯片
公开(公告)号：EP0725980B1
公开(公告)日：2001-12-05
申请号：EP95931647.2
申请日：1995-08-29
IPC分类号： H01L21/8247 , H01L27/105 , H01L27/115
CPC分类号： H01L27/11526 , H01L27/0611 , H01L27/0688 , H01L27/105 , H01L27/11529 , H01L27/11546 , H01L27/11551
摘要： An EEPROM cell is formed in an IC chip by using only three masking steps in addition to those required for the basic CMOS transistors in the chip. A first mask layer is used to define source/drain regions of select and memory transistors within the EEPROM cell; a second mask layer is used to define a tunneling region of the memory transistor;and a third mask layer is used to define a floating gate of the memory transistor and a gate of the select transistor. A control gate of the memory transistor is formed using the same mask that is used to define the gates of the CMOS transistors. The third and fourth mask layers may also be used to form the lower and upper electrodes, respectively, of a capacitor.
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2.发明公开METHOD OF FABRICATION OF AN INTEGRATED CIRCUIT CHIP CONTAINING EEPROM AND CAPACITOR 失效过程执行EEPROM和一个电容含集成电路芯片
公开(公告)号：EP0725980A1
公开(公告)日：1996-08-14
申请号：EP95931647.0
申请日：1995-08-29
CPC分类号： H01L27/11526 , H01L27/0611 , H01L27/0688 , H01L27/105 , H01L27/11529 , H01L27/11546 , H01L27/11551
摘要： An EEPROM cell is formed in an IC chip by using only three masking steps in addition to those required for the basic CMOS transistors in the chip. A first mask layer is used to define source/drain regions of select and memory transistors within the EEPROM cell; a second mask layer is used to define a tunneling region of the memory transistor;and a third mask layer is used to define a floating gate of the memory transistor and a gate of the select transistor. A control gate of the memory transistor is formed using the same mask that is used to define the gates of the CMOS transistors. The third and fourth mask layers may also be used to form the lower and upper electrodes, respectively, of a capacitor.
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