公开(公告)号：EP0241046A3

公开(公告)日：1990-05-16

申请号：EP87105372.4

申请日：1987-04-10

申请人： NEC CORPORATION

发明人： Satoh, Noboru

IPC分类号： H01L27/06 ,  H01L23/52 ,  G11C17/00

CPC分类号： H01L23/5256 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device including a fuse-type memory element is disclosed. This device comprises a semi-­conductor substrate, a field insulating layer on the substrate in which a hollow or trench is formed, and a fuse formed on the field insulating layer so as to run across the hollow or trench. The fuse is broken down on the edge of the hollow so that the broken point of the fuse may be predetermined.

公开(公告)号：EP0111868A3

公开(公告)日：1986-10-01

申请号：EP83112487

申请日：1983-12-12

申请人： NEC CORPORATION

发明人： Satoh, Noboru

IPC分类号： G11C11/34 ,  G11C27/02

CPC分类号： H01L29/68 ,  G11C27/005 ,  G11C27/02

摘要： @ The non-volatile semiconductor memory elements having an MIS structure show a hysteresis curve in the gate voltage - the threshold voltage characteristic. The continuously changing region of the hysteresis curve is used to operate the memory elements as analog memories. The input analog signal is applied to the gate electrode of a selected memory element after it is converted to have a voltage-within the continuously changing region, to change the threshold voltage of the selected memory element. The changed threshold voltage is read out in read-out operation.

公开(公告)号：EP0241046A2

公开(公告)日：1987-10-14

申请号：EP87105372.4

申请日：1987-04-10

申请人： NEC CORPORATION

发明人： Satoh, Noboru

IPC分类号： H01L27/06 ,  H01L23/52 ,  G11C17/00

CPC分类号： H01L23/5256 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device including a fuse-type memory element is disclosed. This device comprises a semi-­conductor substrate, a field insulating layer on the substrate in which a hollow or trench is formed, and a fuse formed on the field insulating layer so as to run across the hollow or trench. The fuse is broken down on the edge of the hollow so that the broken point of the fuse may be predetermined.

摘要翻译： 公开了一种包括熔丝型存储元件的半导体器件。 该器件包括半导体衬底，在其上形成有中空或沟槽的衬底上的场绝缘层，以及形成在场绝缘层上以便穿过中空或沟槽的熔丝。 保险丝在中空的边缘处被分解，使得保险丝的断点可以被预先确定。

公开(公告)号：EP0111868A2

公开(公告)日：1984-06-27

申请号：EP83112487.0

申请日：1983-12-12

申请人： NEC CORPORATION

发明人： Satoh, Noboru

IPC分类号： G11C11/34 ,  G11C27/02

CPC分类号： H01L29/68 ,  G11C27/005 ,  G11C27/02

摘要： @ The non-volatile semiconductor memory elements having an MIS structure show a hysteresis curve in the gate voltage - the threshold voltage characteristic. The continuously changing region of the hysteresis curve is used to operate the memory elements as analog memories. The input analog signal is applied to the gate electrode of a selected memory element after it is converted to have a voltage-within the continuously changing region, to change the threshold voltage of the selected memory element. The changed threshold voltage is read out in read-out operation.