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8 条记录 (耗时 0.008 秒)

    Integrated circuit with built-in indicator of internal repair
    1.
    发明授权
    Integrated circuit with built-in indicator of internal repair 失效
    集成电路内部的修理内置显示器。

    公开(公告)号：EP0195412B1

    公开(公告)日：1994-08-24

    申请号：EP86103658.0

    申请日：1986-03-18

    申请人： NEC CORPORATION

    发明人： Watanabe, Takayuki

    IPC分类号： G06F11/20

    CPC分类号： G11C29/835

    摘要： A circuit for providing an identification signal indicative of whether or not an semiconductor device has a repaired or replaced portion therein. The circuit is enabled by a control signal which is used for controlling the semiconductor device and causes a change in power supply current flowing into the semiconductor device according to presence or absence of the repaired or replaced portion.

    Static memory circuit provided with improved bit line precharging circuit
    3.
    发明公开
    Static memory circuit provided with improved bit line precharging circuit 失效
    Statische Speicherschaltung mit verbesserter Bitleitungs-Vorladeschaltung。

    公开(公告)号：EP0380091A1

    公开(公告)日：1990-08-01

    申请号：EP90101486.0

    申请日：1990-01-25

    申请人： NEC CORPORATION

    发明人： Watanabe, Takayuki

    IPC分类号： G11C11/419

    CPC分类号： G11C11/419

    摘要： A static memory circuit provided with an improved bit line precharge circuit (Q p1 - Q p3 ) includes a control circuit which disenables a bit line pull-up circuit (Q p4 , Q p5 ) during a first period through which one of the word lines (WL₁ - WL n ) to be selected performs a potential change to a selective level and enables the pull-up circuit during other period than the first period.

    摘要翻译： 设置有改进的位线预充电电路（Qp1-Qp3）的静态存储电路包括控制电路，其在第一时段内禁止位线上拉电路（Qp4，Qp5），通过该第一时间段中的一个字线（WL1-WLn ）被执行到选择电平的电位改变，并且在比第一周期的其他时段期间使能上拉电路。

    Memory circuit with power supply voltage detection means
    4.
    发明公开
    Memory circuit with power supply voltage detection means 失效
    存储电路与用于检测电源电压。

    公开(公告)号：EP0102618A2

    公开(公告)日：1984-03-14

    申请号：EP83108582.4

    申请日：1983-08-31

    申请人： NEC CORPORATION

    发明人： Watanabe, Takayuki

    IPC分类号： G11C5/00 ,  G11C8/00 ,  G01R19/165 ,  G05F1/571 ,  G06F1/00 ,  H03K17/22

    CPC分类号： H03K17/223 ,  G01R19/16557 ,  G05F1/571 ,  G06F1/28 ,  G11C5/143 ,  G11C8/18

    摘要： @ A memory circuit provided with a control circuit which controls operations of the memory circuit in such a manner that the memory circuit is automatically set in a stand-by state when a value of a power voltage is reduced in absolute value irrespectively of a control signal from the outside and which consumes no DC current is disclosed. The control circuit comprises a load element coupled between first and second terminals, a series circuit of first and second field effect transistors coupled between the second terminal and a third terminal, the first transistor being controlled by the control signal, the second transistor being adapted to be conducting when a value of the power voltage is sufficient for allowing a normal access operation, a means for connecting the first terminal to one of the power voltage and a reference voltage, and a means for connecting the third terminal to the other of the power voltage and the reference voltage.

    Integrated circuit with built-in indicator of internal repair
    5.
    发明公开
    Integrated circuit with built-in indicator of internal repair 失效
    内置修理指示器的集成电路

    公开(公告)号：EP0195412A3

    公开(公告)日：1989-01-18

    申请号：EP86103658.0

    申请日：1986-03-18

    申请人： NEC CORPORATION

    发明人： Watanabe, Takayuki

    IPC分类号： G06F11/20

    CPC分类号： G11C29/835

    摘要： A circuit for providing an identification signal indicative of whether or not an semiconductor device has a repaired or replaced potion therein. The circuit is enabled by a control signal which is used for control the semiconductor device and causes a change in power supply current flowing into the semiconductor device according to presence or absence of the repaired or replaced portion.

    Memory circuit with power supply voltage detection means
    7.
    发明公开
    Memory circuit with power supply voltage detection means 失效
    具有电源电压检测手段的存储器电路

    公开(公告)号：EP0102618A3

    公开(公告)日：1987-07-29

    申请号：EP83108582

    申请日：1983-08-31

    申请人： NEC CORPORATION

    发明人： Watanabe, Takayuki

    IPC分类号： G11C05/00 ,  G11C08/00 ,  G01R19/165 ,  G05F01/571 ,  G06F01/00 ,  H03K17/22

    CPC分类号： H03K17/223 ,  G01R19/16557 ,  G05F1/571 ,  G06F1/28 ,  G11C5/143 ,  G11C8/18

    摘要： @ A memory circuit provided with a control circuit which controls operations of the memory circuit in such a manner that the memory circuit is automatically set in a stand-by state when a value of a power voltage is reduced in absolute value irrespectively of a control signal from the outside and which consumes no DC current is disclosed. The control circuit comprises a load element coupled between first and second terminals, a series circuit of first and second field effect transistors coupled between the second terminal and a third terminal, the first transistor being controlled by the control signal, the second transistor being adapted to be conducting when a value of the power voltage is sufficient for allowing a normal access operation, a means for connecting the first terminal to one of the power voltage and a reference voltage, and a means for connecting the third terminal to the other of the power voltage and the reference voltage.

    Integrated circuit with built-in indicator of internal repair
    8.
    发明公开
    Integrated circuit with built-in indicator of internal repair 失效
    集成电路内部的修理内置显示器。

    公开(公告)号：EP0195412A2

    公开(公告)日：1986-09-24

    申请号：EP86103658.0

    申请日：1986-03-18

    申请人： NEC CORPORATION

    发明人： Watanabe, Takayuki

    IPC分类号： G06F11/20

    CPC分类号： G11C29/835

    摘要： A circuit for providing an identification signal indicative of whether or not an semiconductor device has a repaired or replaced potion therein. The circuit is enabled by a control signal which is used for control the semiconductor device and causes a change in power supply current flowing into the semiconductor device according to presence or absence of the repaired or replaced portion.