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1.发明公开High frequency transmission line capable of improving an intermodulation distortion characteristic in a high frequency device 失效Hochfrequenz-Übertragungsleitungzur Verbesserung der Intermodulationsverzerrungscharakteristik einer Hochfrequenzvorrichtung
公开(公告)号：EP0863568A2
公开(公告)日：1998-09-09
申请号：EP98104060.3
申请日：1998-03-06
申请人： NEC CORPORATION , Sumitomo Electric Industries, Ltd. , INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER
发明人： Suzuki, Katsumi , Miura, Sadahiko , Inoue, Takayuki , Muranaka, Koji , Zama, Hideaki , Enomoto, Youichi , Morishita, Tadataka , Tanaka, Shoji
摘要： In a high frequency transmission line having a dielectric substrate and a conductor line which is provided on the dielectric substrate for allowing electric current to flow therethrough, the conductor line has a non-grain-boundary oxide superconductor layer with twin walls but without grain boundaries. The high frequency transmission line is in the form of a plane circuit. It is preferable that an oriented oxide superconductor layer is provided between the dielectric substrate and the non-grain-boundary oxide superconductor layer.
摘要翻译： 在具有电介质基板和设置在电介质基板上以允许电流流过其中的导体线的高频传输线中，导线具有双层壁但不具有晶界的非晶界氧化物超导体层。 高频传输线是平面电路的形式。 优选在电介质基板和非晶界氧化物超导体层之间设置取向氧化物超导体层。
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2.发明公开
公开(公告)号：EP0863568A3
公开(公告)日：2000-11-15
申请号：EP98104060.3
申请日：1998-03-06
发明人： Suzuki, Katsumi , Miura, Sadahiko , Inoue, Takayuki , Muranaka, Koji , Zama, Hideaki , Enomoto, Youichi , Morishita, Tadataka , Tanaka, Shoji
摘要： In a high frequency transmission line having a dielectric substrate and a conductor line which is provided on the dielectric substrate for allowing electric current to flow therethrough, the conductor line has a non-grain-boundary oxide superconductor layer with twin walls but without grain boundaries. The high frequency transmission line is in the form of a plane circuit. It is preferable that an oriented oxide superconductor layer is provided between the dielectric substrate and the non-grain-boundary oxide superconductor layer.
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3.发明公开
公开(公告)号：EP0869562A1
公开(公告)日：1998-10-07
申请号：EP98105866.2
申请日：1998-03-31
CPC分类号： H01L39/2422 , C30B19/02 , Y10S505/729 , Y10S505/733
摘要： The present invention can provide an oxide superconductive film with a smooth surface and a homogeneous thickness on a simple substrate structure at a high film formation rate. In a liquid phase epitaxial growth method for producing an ReBa 2 Cu 3 Ox film (3) (Rerepresents one selected from lanthanoids such as Y and Nd, and X represents the oxygen amount) having a 123 type crystal structure from a molten liquid (1), a substrate (2) surface is inclined by 1 degree to 44 degrees with respect to the molten liquid surface at the time of separating the film from the molten liquid after film formation. After separating the film from the molten liquid, the substrate is rotated at 300 rpm to 3000 rpm for 5 seconds to 5 minutes. The film formation atmosphere contains 2 at.% of oxygen and 98 at.% of nitrogen, and the film formation temperature is 900 to 970°C.
摘要翻译： 本发明可以在高成膜速度下在简单的衬底结构上提供具有光滑表面和均匀厚度的氧化物超导膜。 在熔融液体（1）中制备具有123型晶体结构的ReBa2Cu3Ox膜（3）（R选自镧系元素，例如Y和Nd，X表示氧量）的液相外延生长方法中， （2）表面在膜形成之后从熔融液体分离时相对于熔融液体表面倾斜1度至44度。 在从熔融液体中分离膜之后，将基板以300rpm旋转至3000rpm 5秒钟至5分钟。 成膜气氛含有2原子％的氧和98原子％的氮，成膜温度为900〜970℃。
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