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    Process of producing a Josephson junction
    3.
    发明公开
    Process of producing a Josephson junction 失效
    约瑟夫森Verbindung und Herstellungsverfahren。

    公开(公告)号：EP0597663A1

    公开(公告)日：1994-05-18

    申请号：EP93308926.0

    申请日：1993-11-09

    申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER ,  NEC CORPORATION

    发明人： Neumann, Christian ,  Suzuki, Katsumi ,  Enomoto, Youichi ,  Tanaka, Shoji, City Corp. Kashiwagi 103

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2496

    摘要： A Josephson junction is disclosed which includes a substrate of a single crystal having a substantially flat surface, a wiring pattern of an oxide superconductor formed on the flat surface of the substrate, and an altered region formed having a width of 300 nm or less and formed in the wiring pattern to intersect the wiring pattern, the crystal orientations of the wiring pattern on both sides of the altered region being equal to each other. The Josephson junction may be prepared by a process including the steps of: (a) coating a surface of a substrate of a single crystal with a normal metal to form a protecting layer over the surface of the substrate; (b) irradiating a predetermined portion of the protecting layer with a focused ion beam so that an irradiated portion is formed in the substrate; (c) removing the protecting layer from the substrate; and (d) forming a wiring pattern of an oxide superconductor on the surface of the substrate from which the protecting layer has been removed such that the wiring pattern crosses the irradiated portion of the substrate, thereby forming an altered portion in the wiring pattern at a position above the irradiated portion.

    摘要翻译： 公开了一种约瑟夫逊结，其包括具有基本上平坦的表面的单晶的衬底，形成在衬底的平坦表面上的氧化物超导体的布线图案和形成为宽度为300nm或更小的改变区域，并形成 在与布线图案相交的布线图案中，改变区域两侧的布线图案的晶体取向彼此相等。 约瑟夫逊结可以通过包括以下步骤的方法制备：（a）用正常金属涂覆单晶的基材的表面以在基材的表面上形成保护层; （b）用聚焦离子束照射保护层的预定部分，使得在基板中形成照射部分; （c）从衬底上去除保护层; 以及（d）在已经去除了保护层的基板的表面上形成氧化物超导体的布线图案，使得布线图案与基板的照射部分交叉，从而在布线图案中形成改变部分 位于照射部分上方。

    Production method of oxide superconductive film
    5.
    发明公开
    Production method of oxide superconductive film 失效
    Herstellungsweisefüreine supraleitende Schicht

    公开(公告)号：EP0869562A1

    公开(公告)日：1998-10-07

    申请号：EP98105866.2

    申请日：1998-03-31

    申请人： NEC CORPORATION ,  INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER

    发明人： Miura, Sadahiko ,  Morishita, Tadataka ,  Enomoto, Youichi

    IPC分类号： H01L39/24 ,  C30B19/02

    CPC分类号： H01L39/2422 ,  C30B19/02 ,  Y10S505/729 ,  Y10S505/733

    摘要： The present invention can provide an oxide superconductive film with a smooth surface and a homogeneous thickness on a simple substrate structure at a high film formation rate. In a liquid phase epitaxial growth method for producing an ReBa 2 Cu 3 Ox film (3) (Rerepresents one selected from lanthanoids such as Y and Nd, and X represents the oxygen amount) having a 123 type crystal structure from a molten liquid (1), a substrate (2) surface is inclined by 1 degree to 44 degrees with respect to the molten liquid surface at the time of separating the film from the molten liquid after film formation. After separating the film from the molten liquid, the substrate is rotated at 300 rpm to 3000 rpm for 5 seconds to 5 minutes. The film formation atmosphere contains 2 at.% of oxygen and 98 at.% of nitrogen, and the film formation temperature is 900 to 970°C.

    摘要翻译： 本发明可以在高成膜速度下在简单的衬底结构上提供具有光滑表面和均匀厚度的氧化物超导膜。 在熔融液体（1）中制备具有123型晶体结构的ReBa2Cu3Ox膜（3）（R选自镧系元素，例如Y和Nd，X表示氧量）的液相外延生长方法中， （2）表面在膜形成之后从熔融液体分离时相对于熔融液体表面倾斜1度至44度。 在从熔融液体中分离膜之后，将基板以300rpm旋转至3000rpm 5秒钟至5分钟。 成膜气氛含有2原子％的氧和98原子％的氮，成膜温度为900〜970℃。

    Josephson device
    6.
    发明公开
    Josephson device 失效
    约瑟夫森-Anordnung

    公开(公告)号：EP0756335A1

    公开(公告)日：1997-01-29

    申请号：EP96305357.4

    申请日：1996-07-22

    申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER

    发明人： Konishi, Masaya ,  Matsunaga, Yoshinori ,  Enomoto, Youichi ,  Tanaka, Shoji

    IPC分类号： H01L39/22

    CPC分类号： H01L39/225

    摘要： A crystal grain boundary is produced by growing a single crystal YBa 2 Cu 3 O 7-x thin film (2) having a c-axis parallel to the surface on a single crystal YBa 2 Cu 3 O 7-x (001) substrate (1) having a c-axis vertical to the surface by a magnetron sputtering method at a substrate temperature between 500°C and 680°C. The difference of the orientations makes a grain boundary at the interface without interposition of any other material than YBa 2 Cu 3 O 7-x . The grain boundary is utilized as a Josephson junction.

    摘要翻译： 通过在具有垂直于c轴的单轴YBa2Cu3O7-x（001）衬底（1）上生长具有平行于表面的c轴的单晶YBa2Cu3O7-x薄膜（2）来产生晶界边界。 通过磁控溅射法在基板温度在500℃至680℃之间的表面。取向的差异使得界面处的晶界没有插入比YBa2Cu3O7-x的任何其它材料。 晶界用作约瑟夫逊结。

    Process for formation of oxide thin film
    10.
    发明公开
    Process for formation of oxide thin film 失效
    Verfahren zum Herstellen einerdünnenOxidschicht

    公开(公告)号：EP0770700A1

    公开(公告)日：1997-05-02

    申请号：EP96117151.9

    申请日：1996-10-25

    申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER ,  E.I. DU PONT DE NEMOURS AND COMPANY

    发明人： Rai, Bunichi ,  Enomoto, Youichi

    IPC分类号： C23C14/28 ,  C23C14/08 ,  H01L39/24

    CPC分类号： C23C14/28 ,  H01L39/2448

    摘要： A process for formation of oxide thin film, which comprises applying a laser beam on a target oxide material to generate a vapor therefrom and depositing the vapor on a substrate to form an oxide thin film on the substrate, wherein the formation of an oxide thin film on the substrate is conducted by disposing the target and the substrate face to face, scanning the laser beam applied onto the target, in a direction normal to the target central axis, and rotating the substrate.

    摘要翻译： 一种用于形成氧化物薄膜的方法，其包括在目标氧化物材料上施加激光束以产生蒸气，并将蒸气沉积在基板上以在基板上形成氧化物薄膜，其中形成氧化物薄膜 在基板上通过将靶和基板面对面地设置，沿垂直于目标中心轴的方向扫描施加到靶上的激光束，并旋转基板。