公开(公告)号：EP1197996A2

公开(公告)日：2002-04-17

申请号：EP01124424.1

申请日：2001-10-11

申请人： NGK INSULATORS, LTD.

发明人： Shibata, Tomohiko, c/o NGK Insulators ,  Nakamura, Yukinori, c/o NGK Insulators ,  Tanaka, Mitsuhiro, c/o NGK Insulators

IPC分类号： H01L21/205 ,  C30B25/02

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T428/12681 ,  Y10T428/31848

摘要： An epitaxial wafer has a base material made of sapphire-SiC single crystal or the like, a III nitride underfilm including at least Al element epitaxially grown on the base material and a GaN film, preferably having a thickness of 50Å or over, formed on the underfilm. In a fabricating a III nitride films on the epitaxial wafer, the oxidized surface layer of the GaN film is removed through etching process, and subsequently, the III nitride film is formed.

摘要翻译： 外延晶片具有由蓝宝石-SiC单晶等制成的基材，在基材上外延生长至少包含Al元素的III族氮化物底膜和优选形成有厚度为50以上的GaN膜， underfilm。 在外延晶片上制造III族氮化物膜时，通过蚀刻工艺去除GaN膜的氧化表面层，随后形成III族氮化物膜。

公开(公告)号：EP1197996A3

公开(公告)日：2008-08-06

申请号：EP01124424.1

申请日：2001-10-11

申请人： NGK INSULATORS, LTD.

发明人： Shibata, Tomohiko, c/o NGK Insulators ,  Nakamura, Yukinori, c/o NGK Insulators ,  Tanaka, Mitsuhiro, c/o NGK Insulators

IPC分类号： H01L21/205 ,  C30B25/02 ,  H01L33/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T428/12681 ,  Y10T428/31848

摘要： An epitaxial wafer has a base material made of sapphire-SiC single crystal or the like, a III nitride underfilm including at least Al element epitaxially grown on the base material and a GaN film, preferably having a thickness of 50Å or over, formed on the underfilm. In a fabricating a III nitride films on the epitaxial wafer, the oxidized surface layer of the GaN film is removed through etching process, and subsequently, the III nitride film is formed.

公开(公告)号：EP1197995A3

公开(公告)日：2006-07-05

申请号：EP01124422.5

申请日：2001-10-11

申请人： NGK INSULATORS, LTD.

发明人： Shibata, Tomohiko, c/o NGK Insulators ,  Nakamura, Yukinori, c/o NGK Insulators ,  Tanaka, Mitsuhiro, c/o NGK Insulators

IPC分类号： H01L21/205 ,  C30B25/02

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262

摘要： A III nitride film including Al element is fabricated by a MOCVD method with monitoring the dew point of the reactor to be used in the MOCVD method. An organic metal vapor flown in the reactor, the dew point is preferably set to a temperature of -90°C or below. Then, the film is fabricated.

摘要翻译： 包含Al元素的III族氮化物膜通过MOCVD法制备，监测在MOCVD法中使用的反应器的露点。 在反应器中流动的有机金属蒸气的露点优选设定在-90℃以下的温度。 然后，制作这部电影。

公开(公告)号：EP1197995B1

公开(公告)日：2011-01-05

申请号：EP01124422.5

申请日：2001-10-11

申请人： NGK Insulators, Ltd.

发明人： Shibata, Tomohiko, c/o NGK Insulators ,  Nakamura, Yukinori, c/o NGK Insulators ,  Tanaka, Mitsuhiro, c/o NGK Insulators

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/205

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262

公开(公告)号：EP1197995A2

公开(公告)日：2002-04-17

申请号：EP01124422.5

申请日：2001-10-11

申请人： NGK INSULATORS, LTD.

发明人： Shibata, Tomohiko, c/o NGK Insulators ,  Nakamura, Yukinori, c/o NGK Insulators ,  Tanaka, Mitsuhiro, c/o NGK Insulators

IPC分类号： H01L21/205 ,  C30B25/02

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262

摘要： A III nitride film including Al element is fabricated by a MOCVD method with monitoring the dew point of the reactor to be used in the MOCVD method. An organic metal vapor flown in the reactor, the dew point is preferably set to a temperature of -90°C or below. Then, the film is fabricated.