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    Electrode for silicon carbide semiconductor, silicon carbide semiconductor element comprising the electrode, and production method therefor
    1.
    发明公开
    Electrode for silicon carbide semiconductor, silicon carbide semiconductor element comprising the electrode, and production method therefor 有权
    Verfahren zur Herstellung einer ElektrodefürSiliziumkarbidhalbleiter

    公开(公告)号：EP1246252A2

    公开(公告)日：2002-10-02

    申请号：EP02252154.6

    申请日：2002-03-26

    申请人： NGK SPARK PLUG CO., LTD

    发明人： Nakashima, Kenshiro ,  Okuyama, c/o NGK Spark Plug Co Ltd ,  Yokoi, Hitoshi, c/o NGK Spark Plug Co. Ltd ,  Oshima, Takafumi, c/o NGK Spark Plug Co Ltd

    IPC分类号： H01L29/45 ,  H01L29/24 ,  H01L21/28

    CPC分类号： H01L21/0485 ,  H01L29/1608 ,  H01L29/45

    摘要： An ohmic electrode for an SiC semiconductor includes a p-type Si layer formed on the surface of a p-type SiC semiconductor, and a metal silicide layer formed on the surface of the Si layer, the metal silicide layer being formed from a metal silicide such as PtSi. The p-type Si layer is preferably formed from p-type Si having a carrier concentration equal to or higher than that of the aforementioned p-type SiC. Preferably, the ohmic electrode is formed as follows: deposition of Si is performed; deposition of a metal silicide is performed by means of laser ablation; laser irradiation is performed to thereby improve ohmic properties and enhance adhesion between the resultant deposition layer and the p-type SiC semiconductor; and then further deposition of the metal silicide is performed by means of laser ablation.

    摘要翻译： 用于SiC半导体的欧姆电极包括在p型SiC半导体的表面上形成的p型Si层和在Si层的表面上形成的金属硅化物层，金属硅化物层由金属硅化物形成 如PtSi。 p型Si层优选由具有等于或高于上述p型SiC的载流子浓度的p型Si形成。 优选地，欧姆电极形成如下：进行Si的沉积; 通过激光烧蚀进行金属硅化物的沉积; 进行激光照射，从而提高欧姆性能，增强所得到的沉积层和p型SiC半导体之间的粘附性; 然后通过激光烧蚀进行金属硅化物的进一步沉积。

    Electrode for silicon carbide semiconductor, silicon carbide semiconductor element comprising the electrode, and production method therefor
    3.
    发明公开
    Electrode for silicon carbide semiconductor, silicon carbide semiconductor element comprising the electrode, and production method therefor 有权
    碳化硅半导体用电极，包含该电极的碳化硅半导体元件及其制造方法

    公开(公告)号：EP1246252A3

    公开(公告)日：2007-01-03

    申请号：EP02252154.6

    申请日：2002-03-26

    申请人： NGK SPARK PLUG CO., LTD

    发明人： Nakashima, Kenshiro ,  Okuyama, c/o NGK Spark Plug Co Ltd ,  Yokoi, Hitoshi, c/o NGK Spark Plug Co. Ltd ,  Oshima, Takafumi, c/o NGK Spark Plug Co Ltd

    IPC分类号： H01L29/45 ,  H01L29/24 ,  H01L21/28

    CPC分类号： H01L21/0485 ,  H01L29/1608 ,  H01L29/45

    摘要： An ohmic electrode for an SiC semiconductor includes a p-type Si layer formed on the surface of a p-type SiC semiconductor, and a metal silicide layer formed on the surface of the Si layer, the metal silicide layer being formed from a metal silicide such as PtSi. The p-type Si layer is preferably formed from p-type Si having a carrier concentration equal to or higher than that of the aforementioned p-type SiC. Preferably, the ohmic electrode is formed as follows: deposition of Si is performed; deposition of a metal silicide is performed by means of laser ablation; laser irradiation is performed to thereby improve ohmic properties and enhance adhesion between the resultant deposition layer and the p-type SiC semiconductor; and then further deposition of the metal silicide is performed by means of laser ablation.

    摘要翻译： 用于SiC半导体的欧姆电极包括形成在p型SiC半导体的表面上的p型Si层和形成在Si层的表面上的金属硅化物层，金属硅化物层由金属硅化物 如PtSi。 p型Si层优选由具有与上述p型SiC的载流子浓度相同或更高的载流子浓度的p型Si形成。 优选地，欧姆电极如下形成：执行Si的沉积; 通过激光烧蚀进行金属硅化物的沉积; 执行激光照射以由此改善欧姆特性并增强所得沉积层与p型SiC半导体之间的粘合; 然后通过激光烧蚀进行金属硅化物的进一步沉积。