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21 条记录 (耗时 0.017 秒)

    Infrared detective element
    1.
    发明公开
    Infrared detective element 失效
    Infrarot-声学探测器 - 要素。

    公开(公告)号：EP0419718A1

    公开(公告)日：1991-04-03

    申请号：EP89118061.4

    申请日：1989-09-29

    申请人： NIPPON CARBON CO., LTD. ,  SOGO SECURITY SERVICES CO., LTD. ,  Yanagida, Hiroaki

    发明人： Yanagida, Hiroaki ,  Miyayama, Masaru ,  Muto, Norio ,  Ichikawa, Hiroshi ,  Kajiwara, Teijiro

    IPC分类号： G01J5/20 ,  H01C7/04

    CPC分类号： G01J5/20 ,  H01C7/048

    摘要： An infrared detective element for detecting a dose of infrared rays by a change in electrical resistance of monofilaments composed mainly of silicon carbide upon infrared radiation thereto,
    either the monofilaments having a resistivity of 1.0 x 10⁵ to 1.0 x 10³ Ω·cm at room temperature and a diameter of 3 to 200 µm,
    or the monofilaments having a composition:
    Si: 50 to 70 wt%
    C: 28 to 40 wt%
    O: 0 to 10 wt%
    the balance (H and/or Ti or Zr): 0 to 10 wt%, and having a resistivity of 1.0 x 10⁵ to 1.0 x 10⁻¹ Ω·cm at room temperature and a diameter of 3 to 200 µm,
    in either case, the monofilaments being arranged between electrodes without bringing them into contact with each other. The infrared detective elements of the present invention are excellent in properties, especially short response times.

    摘要翻译： 一种红外线检测元件，用于通过在红外辐射时主要由碳化硅组成的单丝的电阻变化来检测红外线的剂量，单丝的电阻率为1.0×10 5至1.0×10 3欧米茄 室温下的直径为3〜200μm的单丝或Si：50〜70重量％的单丝C：28〜40重量％O：0〜10重量％余量（H和/或 Ti或Zr）：0〜10重量％，在室温下电阻率为1.0×10 5〜1.0×10 -3Ω·cm，直径3〜200μm， 情况下，单丝布置在电极之间，而不使它们彼此接触。 本发明的红外线检测元件的特性优异，反应时间短。

    Super heat-resistant silicon carbide fibers and process for producing the same
    4.
    发明公开
    Super heat-resistant silicon carbide fibers and process for producing the same 失效
    HitzebeständigeSiliziumkarbidfasern und Verfahren zu deren Herstellung。

    公开(公告)号：EP0544038A1

    公开(公告)日：1993-06-02

    申请号：EP91310887.4

    申请日：1991-11-26

    申请人： NIPPON CARBON CO., LTD.

    发明人： Seguchi, Tadao Takasaki Radiation Chem. Res. Est. ,  Kasai, Noboru Takasaki Radiation Chem. Res. Establ ,  Okamura, Kiyohito ,  Ichikawa, Hiroshi ,  Takeda, Michio ,  Nishii, Masanobu Takasaki Radiation Chem. Res. Est

    IPC分类号： C04B35/56

    CPC分类号： C04B35/571

    摘要： A super heat-resistant silicon carbide fiber has an oxygen content of less than 1.0% by weight. In a process for producing the super heat-resistant silicon carbide fiber, a precursor fiber prepared by spinning a polycarbosilane having an oxygen content of less than 0.8% by weight is irradiated with a radiation in an oxygen-free atmosphere or in vacuo to make the precursor fiber infusible. The infusibilized fiber is fired in an oxygen-free atmosphere or in vacuo at a temperature of from 1000 to 2200°C without exposure to an oxidizing atmosphere; or stabilized in the same atmosphere at a temperature of from 300 to 600°C without exposure to an oxidizing atmosphere and fired in an oxygen-free atmosphere or in vacuo at a temperature of from 1000 to 2200°C.

    摘要翻译： 超耐热碳化硅纤维的氧含量小于1.0重量％。 在制造超耐热碳化硅纤维的方法中，通过纺丝具有小于0.8重量％的氧含量的聚碳硅烷制备的前体纤维，在无氧气氛或真空中用辐射照射， 前体纤维不可渗透。 不熔化的纤维在无氧气氛中或真空中在1000-2200℃的温度下烧制而不暴露于氧化气氛; 或在相同气氛中在300-600℃的温度下稳定，而不暴露于氧化气氛，并在无氧气氛中或在真空中在1000-2200℃的温度下烧制。

    Electromagnetic wave absorbers
    7.
    发明公开
    Electromagnetic wave absorbers 失效
    电磁波的吸收。

    公开(公告)号：EP0238291A1

    公开(公告)日：1987-09-23

    申请号：EP87302240.4

    申请日：1987-03-17

    申请人： NIPPON CARBON CO., LTD.

    发明人： Ishikawa, Toshikatsu ,  Teranishi, Haruo ,  Ichikawa, Hiroshi ,  Ushikoshi, Kenji

    IPC分类号： H01Q17/00

    CPC分类号： H01Q17/005 ,  Y10T428/24942 ,  Y10T428/2918 ,  Y10T442/3415 ,  Y10T442/3528

    摘要： An electromagnetic wave absorber comprising a surface layer (2) made of a composite of fibers having an electrical specific resistance of more than 10⁴ Ωcm and a resin, and a wave absorbing layer (3) made of a composite containing silicon carbide fibers having an electrical specific resistance of from 10⁻² to 10⁴ Ωcm. The composite used in the surface layer may be prepared, for example, by impregnating the resin in between the fibers after they have been treated to be a woven cloth, mat or felt or unidirectionally arranged fibers. If a wave absorbing layer is to be made of a composite containing the silicon carbide fibers and a resin, then the composite may be prepared in the same way as the above.

    Process for producing silicon carbide fibers
    10.
    发明公开
    Process for producing silicon carbide fibers 失效
    Verfahren zur Herstellung von Silicium carbidfasern

    公开(公告)号：EP0744390A2

    公开(公告)日：1996-11-27

    申请号：EP96108094.2

    申请日：1996-05-21

    申请人： NIPPON CARBON CO., LTD.

    发明人： Ichikawa, Hiroshi ,  Takeda, Michio ,  Sakamoto, Junichi ,  Saeki, Akinori

    IPC分类号： C04B35/571

    CPC分类号： C04B35/571

    摘要： The present invention provides a process for producing silicon carbide fibers having a C/Si molar ratio of from 0.85 to 1.39 and excellent in heat resistance and strength at high temperatures, while conventional processes have not been able to produce the fibers having the ratio of less than 1.56.
    The process of the present invention comprises the steps of rendering infusible precursory fibers made from an organosilicon polymer compound to obtain infusible fibers, then primarily baking the infusible fibers in a hydrogen gas-containing atmosphere while raising the temperature thereof to obtain primarily baked fibers, and further secondarily baking the primarily baked fibers to obtain final fibers. The secondary baking is performed in the atmosphere of a mixed gas of an inert gas with hydrogen chloride gas at 1,500 to 2,200 °C.

    摘要翻译： 本发明提供了C / Si摩尔比为0.85〜1.39的碳化硅纤维的制造方法，在高温下耐热性和强度优异的同时，常规方法不能生产出比例小的纤维 比1.56。 本发明的方法包括以下步骤：使由有机硅高分子化合物制成的可熔化的前体纤维得到不熔的纤维，然后主要在含氢气的气氛中焙烧可熔纤维，同时提高其温度以获得主要焙烧的纤维;以及 进一步二次烘烤主要焙烧的纤维以获得最终纤维。 二次烘烤在惰性气体与氯化氢气体的混合气体的气氛中在1500〜2200℃下进行。