公开(公告)号：EP1574602A4

公开(公告)日：2009-07-08

申请号：EP03748696

申请日：2003-10-03

申请人： NIPPON MINING CO

发明人： ASAHI TOSHIAKI ,  SATO KENJI ,  YABE TAKAYUKI ,  ARAKAWA ATSUTOSHI

IPC分类号： C30B15/12 ,  C30B15/00 ,  C30B27/02 ,  C30B29/48

CPC分类号： C30B27/02 ,  C30B15/12 ,  C30B29/48 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A process for producing a single crystal of compound semiconductor; and a crystal growing apparatus therefor. In particular, a process for producing a single crystal of compound semiconductor, for example, ZnTe compound semiconductor according to the liquid-enclosed Czochralski (LEC) process; and a crystal growing apparatus therefor. More specifically, a process for producing a single crystal of compound semiconductor with the use of a crystal growing apparatus of double crucible structure according to the LEC process, wherein a second crucible is covered with a lid of plate-shaped member provided with a pass-through slot, the pass-through slot enabling introduction of a crystal lifting shaft having a seed crystal holding part at its distal end in the second crucible, so that crystal growth is effected in such conditions that the atmosphere within the second crucible is substantially unchanged (semisealed conditions). Thus, in the crystal growth according to the LEC process, a single crystal of high quality wherein the ratio of crystal defects is low can be produced.