公开(公告)号：EP1574602A4

公开(公告)日：2009-07-08

申请号：EP03748696

申请日：2003-10-03

申请人： NIPPON MINING CO

发明人： ASAHI TOSHIAKI ,  SATO KENJI ,  YABE TAKAYUKI ,  ARAKAWA ATSUTOSHI

IPC分类号： C30B15/12 ,  C30B15/00 ,  C30B27/02 ,  C30B29/48

CPC分类号： C30B27/02 ,  C30B15/12 ,  C30B29/48 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A process for producing a single crystal of compound semiconductor; and a crystal growing apparatus therefor. In particular, a process for producing a single crystal of compound semiconductor, for example, ZnTe compound semiconductor according to the liquid-enclosed Czochralski (LEC) process; and a crystal growing apparatus therefor. More specifically, a process for producing a single crystal of compound semiconductor with the use of a crystal growing apparatus of double crucible structure according to the LEC process, wherein a second crucible is covered with a lid of plate-shaped member provided with a pass-through slot, the pass-through slot enabling introduction of a crystal lifting shaft having a seed crystal holding part at its distal end in the second crucible, so that crystal growth is effected in such conditions that the atmosphere within the second crucible is substantially unchanged (semisealed conditions). Thus, in the crystal growth according to the LEC process, a single crystal of high quality wherein the ratio of crystal defects is low can be produced.

公开(公告)号：EP1500633A4

公开(公告)日：2007-10-24

申请号：EP02786108

申请日：2002-12-17

申请人： NIPPON MINING CO

发明人： ASAHI TOSHIAKI ,  SATO KENJI ,  ARAKAWA ATSUTOSHI

IPC分类号： C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/48 ,  C03B15/12

CPC分类号： C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/48

摘要： A method for producing a compound semiconductor single crystal by a liquid encapsulated Czochralski method, including containing a semiconductor raw material and an encapsulating material in a raw material melt-containing portion having a first crucible having a bottom and a cylindrical shape and a second crucible disposed within the first crucible and having a communication hole communicating with the first crucible in a bottom portion thereof; melting the raw material by heating the raw material melt-containing portion; and growing a crystal by making a seed crystal contact with a surface of the raw material melt in a state covered with the encapsulating material and by pulling up the seed crystal. A heater temperature is controlled so that a diameter of a growing crystal becomes approximately equal to an inner diameter of the second crucible, and the crystal is grown by maintaining a surface of the growing crystal in a state covered with the encapsulating material until termination of crystal growth.