公开(公告)号：EP1905873A4

公开(公告)日：2008-09-10

申请号：EP06781178

申请日：2006-07-18

申请人： NIPPON MINING CO

发明人： ASAHI TOSHIAKI ,  SATO KENJI ,  SHIMIZU TAKAYUKI

IPC分类号： C30B29/48 ,  C30B33/02

CPC分类号： C30B29/48 ,  C30B33/02 ,  H01L21/477

摘要： Disclosed is a heat treatment method for effectively eliminating a Te precipitate in a ZnTe single crystal substrate. Also disclosed is a ZnTe single crystal substrate having optical characteristics suitable for use as an optical modulator or the like and a thickness of not less than 1 mm. Specifically disclosed is a heat treatment method for a ZnTe single crystal substrate comprising a first step wherein the substrate is heated to a first heat treatment temperature T1 and held at that temperature for a predetermined time, and a second step wherein the substrate is gradually cooled from the first heat treatment temperature T1 to a second treatment temperature T2, which is lower than the first treatment temperature T1, at a predetermined rate. In this method, the first heat treatment temperature T1 is set to be 700°C = T1 = 1250°C, while the second heat treatment temperature T2 is set to be T2 = T1-50.

公开(公告)号：EP1500633A4

公开(公告)日：2007-10-24

申请号：EP02786108

申请日：2002-12-17

申请人： NIPPON MINING CO

发明人： ASAHI TOSHIAKI ,  SATO KENJI ,  ARAKAWA ATSUTOSHI

IPC分类号： C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/48 ,  C03B15/12

CPC分类号： C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/48

摘要： A method for producing a compound semiconductor single crystal by a liquid encapsulated Czochralski method, including containing a semiconductor raw material and an encapsulating material in a raw material melt-containing portion having a first crucible having a bottom and a cylindrical shape and a second crucible disposed within the first crucible and having a communication hole communicating with the first crucible in a bottom portion thereof; melting the raw material by heating the raw material melt-containing portion; and growing a crystal by making a seed crystal contact with a surface of the raw material melt in a state covered with the encapsulating material and by pulling up the seed crystal. A heater temperature is controlled so that a diameter of a growing crystal becomes approximately equal to an inner diameter of the second crucible, and the crystal is grown by maintaining a surface of the growing crystal in a state covered with the encapsulating material until termination of crystal growth.

公开(公告)号：EP1900540A4

公开(公告)日：2009-02-18

申请号：EP06731381

申请日：2006-04-07

申请人： NIPPON MINING CO

发明人： SATO KENJI

IPC分类号： B41M5/26 ,  C23C14/34 ,  G11B7/243 ,  G11B7/254 ,  G11B7/257 ,  G11B7/26

CPC分类号： C23C14/3414 ,  G11B7/2433 ,  G11B7/266

摘要： Provided is an optical disk including a Cu alloy recording layer that contains one or more components selected from Zn, Mn, Ga, Ti and Ta in a total amount of 1 to 20at% and the remnants composed of Cu and inevitable impurities, when the optical disk has a structure where a recording layer is sandwiched between ZnS-SiO 2 protective layers. The provided optical disk and sputtering target for a Cu alloy recording layer enable to prevent or inhibit sulfuration of the Cu recording layer caused by the dispersion of S from the protective layer and obtain an optical recording medium with no error in the recording bit, particularly when the said protective layer consists of ZnS-SiO 2 .

公开(公告)号：EP1480260A4

公开(公告)日：2008-10-08

申请号：EP02775533

申请日：2002-11-12

申请人： NIPPON MINING CO

发明人： SASAKI SHINICHI ,  NAKAMURA MASASHI ,  SATO KENJI

IPC分类号： C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  C23C16/34 ,  C30B29/40

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S148/113

摘要： A method for growing a crystal for example, a GaN compound semiconductor crystal on a substrate, comprising the steps of forming a first crystal layer GaN buffer layer, a second crystal layer GaN intermediate layer, and a third crystal layer GaN thick-film layer. In the three steps, the crystal layers are formed under different conditions, respectively.

公开(公告)号：EP1574602A4

公开(公告)日：2009-07-08

申请号：EP03748696

申请日：2003-10-03

申请人： NIPPON MINING CO

发明人： ASAHI TOSHIAKI ,  SATO KENJI ,  YABE TAKAYUKI ,  ARAKAWA ATSUTOSHI

IPC分类号： C30B15/12 ,  C30B15/00 ,  C30B27/02 ,  C30B29/48

CPC分类号： C30B27/02 ,  C30B15/12 ,  C30B29/48 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A process for producing a single crystal of compound semiconductor; and a crystal growing apparatus therefor. In particular, a process for producing a single crystal of compound semiconductor, for example, ZnTe compound semiconductor according to the liquid-enclosed Czochralski (LEC) process; and a crystal growing apparatus therefor. More specifically, a process for producing a single crystal of compound semiconductor with the use of a crystal growing apparatus of double crucible structure according to the LEC process, wherein a second crucible is covered with a lid of plate-shaped member provided with a pass-through slot, the pass-through slot enabling introduction of a crystal lifting shaft having a seed crystal holding part at its distal end in the second crucible, so that crystal growth is effected in such conditions that the atmosphere within the second crucible is substantially unchanged (semisealed conditions). Thus, in the crystal growth according to the LEC process, a single crystal of high quality wherein the ratio of crystal defects is low can be produced.