公开(公告)号：EP0285668A1

公开(公告)日：1988-10-12

申请号：EP87906600.9

申请日：1987-10-08

申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

发明人： MATSUOKA, Morito ,  ONO, Ken'ichi

IPC分类号： C23C14/34 ,  C23C14/36

CPC分类号： H01J37/32623 ,  C23C14/352 ,  C23C14/357 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678

摘要： High density plasma is obtained by generating plasma by electron cyclotron resonance utilizing microwave and entrapping it inside a plasma generation chamber by a mirror magnetic field. A target is disposed inside the plasma generation chamber in a direction crossing at right angles the magnetic flux, and sputtered by ions in the high density plasma and large quantities of ions can be generated. The ions and neutral particles are taken out in the direction orthogonal to the magnetic flux and deposited on a substrate. In this manner, a thin film can be formed at a high speed without the impingement of the high energy particles onto the substrate. The thin film can be formed also on a tape-like substrate by taking out the ions and the neutral particles through a slit-like opening portion.

摘要翻译： 该薄膜由利用微波的电子回旋共振仪产生的高密度等离子体形成。 该装置包括（1）一个真空波导腔，其一端具有用于引入连接到微波导管（2）的微波的窗口，等离子体发生室的半径和长度足够大以形成空腔谐振器，（3） 样品室，（4）具有气体引入入口的真空室，以及（5）围绕等离子体产生室的两端的反射镜磁场产生系统。 （1），（2）和（3）按照该顺序连接，（5）被设计成通过镜面磁场将等离子体在等离子体发生室内捕获。 至少一对靶在与磁通成直角的方向上设置在等离子体产生室的内部。 目标被提供负电压。 样品室在与磁通量成直角的方向上连接到等离子体产生室。 （1）配备有至少一个弯曲部分。 介绍微波炉的窗口是建立在通过目标无法看到的位置。

公开(公告)号：EP0283519B1

公开(公告)日：1994-04-13

申请号：EP87906208.1

申请日：1987-09-24

申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

发明人： MATSUOKA, Morito ,  ONO, Ken'ichi

IPC分类号： H01J27/18 ,  H01J37/32

CPC分类号： H01J37/32623 ,  H01J27/18 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678 ,  H01J2237/081

摘要： High density plasma is obtained by generating plasma by electron cyclotron resonance utilizing microwave and entrapping the plasma in a plasma generation chamber by a mirror magnetic field. A target (23) is disposed in the plasma generation chamber (14) and is sputtered by ions in the high density plasma. Thus, large quantities of ions can be generated. The ion generation apparatus of the invention can be applied to a thin film formation apparatus which introduces the ions and neutral particles onto a substrate (21) to form a thin film, and also to an ion source by providing an ion pickup grid in order to form a thin film on the substrate or to etch the thin film. The film can be formed at a high speed even when the voltage to be applied to the target is reduced, by disposing permanent magnets (34A, 34B) for leaking the inner surface magnetic flux of the target at the positions corresponding to the upper and lower ends of the target (23) in the plasma generation chamber (14).

公开(公告)号：EP0283519A1

公开(公告)日：1988-09-28

申请号：EP87906208.1

申请日：1987-09-24

申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

发明人： MATSUOKA, Morito ,  ONO, Ken'ichi

IPC分类号： H01J27/18 ,  H01J37/32

CPC分类号： H01J37/32623 ,  H01J27/18 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678 ,  H01J2237/081

摘要： High density plasma is obtained by generating plasma by electron cyclotron resonance utilizing microwave and entrapping the plasma In a plasma generation chamber by a mirror magnetic field. A target (23) is disposed in the plasma generation chamber (14) and is sputtered by Ions in the high density plasma. Thus, large quantities of ions can be generated. The ion generation apparatus of the invention can be applied to a thin film formation apparatus which Introduces the ions and neutral particles onto a substrate (21) to form a thin film, and also to an ion source by providing an ion pickup grid in order to form a thin film on the substrate or to etch the thin film. The film can be formed at a high speed even when the voltage to be applied to the target is reduced, by disposing permanent magnets (34A, 34B) for leaking the inner surface magnetic flux of the target at the positions corresponding to the upper and lower ends of the target (23) ln the plasma generation chamber (14).

摘要翻译： 离子发生装置包括一真空室（12），其中真空波导的一端连接到连接到微波引导件，等离子体发生室（14）的直径和长度限定一个微波空腔谐振器的微波引入窗（17） 在其中介绍微波共振和等离子体产生的端子部被连续地连接，并且具有气体导入口（19）; 这是在等离子体腔室和在其上的负电压被施加放置的靶（23）的所有; 和磁场形成元件（34），其用于与它在二次电子的等离子体生成室和截留中心形成一个反射镜的磁场。 该装置被用于薄膜形成，并且因此可以包括用于从靶溅射的粒子电离的选择性撤出的系统，以便在离子源构成。

公开(公告)号：EP0285668B1

公开(公告)日：1994-05-25

申请号：EP87906600.9

申请日：1987-10-08

申请人： Nippon Telegraph and Telephone Corporation

发明人： MATSUOKA, Morito ,  ONO, Ken'ichi

IPC分类号： C23C14/34 ,  C23C14/36

CPC分类号： H01J37/32623 ,  C23C14/352 ,  C23C14/357 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678

摘要： High density plasma is obtained by generating plasma by electron cyclotron resonance utilizing microwave and entrapping it inside a plasma generation chamber by a mirror magnetic field. A target is disposed inside the plasma generation chamber in a direction crossing at right angles the magnetic flux, and sputtered by ions in the high density plasma and large quantities of ions can be generated. The ions and neutral particles are taken out in the direction orthogonal to the magnetic flux and deposited on a substrate. In this manner, a thin film can be formed at a high speed without the impingement of the high energy particles onto the substrate. The thin film can be formed also on a tape-like substrate by taking out the ions and the neutral particles through a slit-like opening portion.