公开(公告)号：EP0439220B1

公开(公告)日：1996-11-13

申请号：EP91200066.8

申请日：1991-01-15

申请人： CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO

发明人： Raspagliesi, Mario ,  Medulla, Candido

IPC分类号： H01J37/08 ,  H01J27/08 ,  H01J27/22

CPC分类号： H01J27/22 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  H01J2237/31701

公开(公告)号：EP0470209A1

公开(公告)日：1992-02-12

申请号：EP90912792.0

申请日：1990-08-31

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

发明人： KLUGE, Andreas ,  NELLE, Peter

IPC分类号： C23C14 ,  H01J27 ,  H01J37 ,  H01L21

CPC分类号： H01J27/22 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  H01J2237/31701

摘要： Pour simplifier la structure d'une source d'ions métalliques, en particulier pour l'implantation de faibles doses de métaux difficilement évaporables dans des tranches de silicium semiconductrices, la source d'ions métalliques comporte une cathode incandescente chauffable électriquement sous la forme d'un filament chauffant à l'intérieur d'une chambre à ions (1a), ledit filament chauffant (3) étant disposé près d'une pièce métallique (6) dans le métal destiné au dégagement d'ions métalliques et placé essentiellement au potentiel dudit métal.

公开(公告)号：EP3006594B1

公开(公告)日：2018-03-28

申请号：EP14803503.3

申请日：2014-05-26

申请人： Japan Science and Technology Agency ,  Ayabo Corporation

发明人： NAKAJIMA, Atsushi ,  TSUNOYAMA, Hironori ,  ZHANG, Chuhang ,  AKATSUKA, Hiroki ,  TSUKAMOTO, Keizo

IPC分类号： C23C14/32 ,  H01J27/20 ,  H01J37/08 ,  H01J37/34 ,  C23C14/35 ,  C23C14/14 ,  C23C14/34

CPC分类号： H01J37/3405 ,  C23C14/14 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/08 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3467 ,  H01J2237/081 ,  H01J2237/0812

摘要： Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a nanocluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the nanocluster growth cell.

公开(公告)号：EP3006594A4

公开(公告)日：2017-01-04

申请号：EP14803503

申请日：2014-05-26

申请人： JAPAN SCIENCE & TECH AGENCY ,  AYABO CORP

发明人： NAKAJIMA ATSUSHI ,  TSUNOYAMA HIRONORI ,  ZHANG CHUHANG ,  AKATSUKA HIROKI ,  TSUKAMOTO KEIZO

IPC分类号： C23C14/32 ,  C23C14/35 ,  H01J27/20 ,  H01J37/08 ,  H01J37/34

CPC分类号： H01J37/3405 ,  C23C14/14 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/08 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3467 ,  H01J2237/081 ,  H01J2237/0812

摘要： Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a nanocluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the nanocluster growth cell.

摘要翻译： 使用纳米簇生产装置改善纳米簇的尺寸和结构的控制。 希望增加具有尺寸和结构的纳米簇的获得量和产率，其中至少一个被选择。 纳米簇生产装置具有真空室，通过脉冲放电产生等离子体的溅射源，向溅射源供给脉冲功率的脉冲电源，向溅射源供给第一惰性气体的第一惰性气体供给装置， 存储在真空室中的纳米簇生长细胞和将第二惰性气体引入纳米簇生长细胞的第二惰性气体引入装置。

公开(公告)号：EP0283519B1

公开(公告)日：1994-04-13

申请号：EP87906208.1

申请日：1987-09-24

申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

发明人： MATSUOKA, Morito ,  ONO, Ken'ichi

IPC分类号： H01J27/18 ,  H01J37/32

CPC分类号： H01J37/32623 ,  H01J27/18 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678 ,  H01J2237/081

摘要： High density plasma is obtained by generating plasma by electron cyclotron resonance utilizing microwave and entrapping the plasma in a plasma generation chamber by a mirror magnetic field. A target (23) is disposed in the plasma generation chamber (14) and is sputtered by ions in the high density plasma. Thus, large quantities of ions can be generated. The ion generation apparatus of the invention can be applied to a thin film formation apparatus which introduces the ions and neutral particles onto a substrate (21) to form a thin film, and also to an ion source by providing an ion pickup grid in order to form a thin film on the substrate or to etch the thin film. The film can be formed at a high speed even when the voltage to be applied to the target is reduced, by disposing permanent magnets (34A, 34B) for leaking the inner surface magnetic flux of the target at the positions corresponding to the upper and lower ends of the target (23) in the plasma generation chamber (14).

公开(公告)号：EP3006594A1

公开(公告)日：2016-04-13

申请号：EP14803503.3

申请日：2014-05-26

申请人： Japan Science and Technology Agency ,  Ayabo Corporation

发明人： NAKAJIMA, Atsushi ,  TSUNOYAMA, Hironori ,  ZHANG, Chuhang ,  AKATSUKA, Hiroki ,  TSUKAMOTO, Keizo

IPC分类号： C23C14/32 ,  H01J27/20 ,  H01J37/08

CPC分类号： H01J37/3405 ,  C23C14/14 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/08 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3467 ,  H01J2237/081 ,  H01J2237/0812

摘要： Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a nanocluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the nanocluster growth cell.

公开(公告)号：EP2368257A4

公开(公告)日：2016-03-09

申请号：EP09836710

申请日：2009-12-08

申请人： GEN PLASMA INC

发明人： MADOCKS JOHN

IPC分类号： H01J27/14 ,  H01J37/08 ,  H01J37/305 ,  H01J37/317 ,  H01J37/32 ,  H01J37/34

CPC分类号： H01J37/08 ,  H01J27/143 ,  H01J37/3053 ,  H01J37/317 ,  H01J37/32862 ,  H01J37/3405 ,  H01J2237/081

公开(公告)号：EP0439220A3

公开(公告)日：1991-11-27

申请号：EP91200066.8

申请日：1991-01-15

申请人： CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO

发明人： Raspagliesi, Mario ,  Medulla, Candido

IPC分类号： H01J37/08 ,  H01J27/08 ,  H01J27/22

CPC分类号： H01J27/22 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  H01J2237/31701

摘要： The device comprises a cylindrical casing (1) provided with an internal cavity (2) and with a flange (3) and an arc chamber (15) superimposed over the cylindrical casing (1) and including a filament (20) electrically supplied through supply conductors (8, 7, 6) external to said casing (1) and supported by said flange (3), a repeller plate (21) held at a negative voltage through supply conductors (8, 7, 6) external to said casing (1) and supported by said flange (3) and an inlet (19) for a gas which may be ionized. Inside the arc chamber (15) there is also a support (23) for the metal to be ionized (24) supported and connected electrically to an electrode (13) at a negative voltage by means of a rod (9) passing through the internal cavity (2) of said cylindrical casing (1).

公开(公告)号：EP3207555A1

公开(公告)日：2017-08-23

申请号：EP15850466.2

申请日：2015-10-14

申请人： Hunt, John Andrew ,  Coyle, Steven Thomas ,  Hassel-Shearer, Michael Patrick ,  Hosman, Thijs C.

发明人： Hunt, John Andrew ,  Coyle, Steven Thomas ,  Hassel-Shearer, Michael Patrick ,  Hosman, Thijs C.

IPC分类号： H01J37/20

CPC分类号： H01J37/243 ,  G01N1/44 ,  H01J37/08 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/081 ,  H01J2237/24514 ,  H01J2237/24535 ,  H01J2237/30483 ,  H01J2237/31 ,  H01J2237/3151 ,  H01J2237/316

摘要： Disclosed are embodiments of an ion beam sample preparation and coating apparatus and methods. A sample may be prepared in one or more ion beams and then a coating may be sputtered onto the prepared sample within the same apparatus. A vacuum transfer device may be used with the apparatus in order to transfer a sample into and out of the apparatus while in a controlled environment. Various methods to improve preparation and coating uniformity are disclosed including: rotating the sample retention stage; modulating the sample retention stage; variable tilt ion beam irradiating means, more than one ion beam irradiating means, coating thickness monitoring, selective shielding of the sample, and modulating the coating donor holder.

摘要翻译： 公开了离子束样品制备和涂覆设备和方法的实施例。 可以在一个或多个离子束中制备样品，然后可以在同一装置内将涂层溅射到制备的样品上。 真空传输装置可以与设备一起使用，以便在受控环境中将样品传入和传出设备。 公开了改进制备和涂层均匀性的各种方法，包括：旋转样品保持阶段; 调节样品保留阶段; 可变倾斜离子束照射装置，多于一个离子束照射装置，涂层厚度监测，样品的选择性屏蔽以及调节涂层供体支架。

公开(公告)号：EP0470209B1

公开(公告)日：1992-12-30

申请号：EP90912792.0

申请日：1990-08-31

申请人： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. ,  SIEMENS AKTIENGESELLSCHAFT

发明人： KLUGE, Andreas ,  NELLE, Peter

IPC分类号： H01J27/22 ,  H01J37/08

CPC分类号： H01J27/22 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  H01J2237/31701

摘要： In order to simplify the structure of a metal-ion source, in particular a source for the implantation of low doses of non-volatile metals in semiconductor wafers, the invention calls for the metal-ion source to include an electrically-heated thermionic cathode in the form of a hot wire inside an ion chamber (1a), the hot wire (3) being located close to an element (6) made of the metal to be ionized and being at substantially the same potential.