-
公开(公告)号：EP0237208B1
公开(公告)日：1991-01-16
申请号：EP87301398.1
申请日：1987-02-18
CPC分类号： H03H9/02874 , H03H9/02858 , H03H9/14517 , H03H9/1452 , H03H9/14547
摘要： A SAW (surface acoustic wave) device includes a substrate having thereon at least one apodized IDT (inter-digital transducer) (10). The axis (18) of the apodization pattern is inclined towards a driven conductive rail (14) of the IDT at the ends of the pattern, whereby the driven end fingers have a low capacitive coupling to a ground plane on which the substrate is supported. The capacitive coupling to the ground plane may additionally be reduced by supporting the substrate on the ground plane via an insulating support, whereby an air gap or the insulating support decreases the capacitance between the IDT and the ground plane.
-
公开(公告)号：EP0200304B1
公开(公告)日：1991-05-29
申请号：EP86301324.9
申请日：1986-02-24
发明人： Este, Grantley Oliver , Suthers, Mark Spencer , Streater, Richard William , MacLaurin, Blair Kenneth
CPC分类号： H03H3/08
-
3.发明公开
公开(公告)号：EP0237208A2
公开(公告)日：1987-09-16
申请号：EP87301398.1
申请日：1987-02-18
CPC分类号： H03H9/02874 , H03H9/02858 , H03H9/14517 , H03H9/1452 , H03H9/14547
摘要： A SAW (surface acoustic wave) device includes a substrate having thereon at least one apodized IDT (inter-digital transducer) (10). The axis (18) of the apodization pattern is inclined towards a driven conductive rail (14) of the IDT at the ends of the pattern, whereby the driven end fingers have a low capacitive coupling to a ground plane on which the substrate is supported. The capacitive coupling to the ground plane may additionally be reduced by supporting the substrate on the ground plane via an insulating support, whereby an air gap or the insulating support decreases the capacitance between the IDT and the ground plane.
摘要翻译： SAW（表面声波）器件包括其上具有至少一个变迹IDT（数字间换能器）（10））的衬底。 变迹图案的轴线（18）朝图案端部的IDT的驱动导电轨道（14）倾斜，由此被驱动的端部指状物具有与支撑衬底的接地平面的低电容耦合。 通过绝缘支撑件将基板支撑在接地平面上，可以额外地减小到接地层的电容耦合，借此气隙或绝缘支架减小IDT与接地层之间的电容。
-
公开(公告)号：EP0197640B2
公开(公告)日：1996-12-11
申请号：EP86301277.9
申请日：1986-02-21
发明人： Suthers, Mark Spencer , Este, Grantley Oliver , Streater, Richard William , MacLaurin, Blair Kenneth
IPC分类号： H03H9/02
CPC分类号： H03H9/02842
-
公开(公告)号：EP0197640B1
公开(公告)日：1991-11-27
申请号：EP86301277.9
申请日：1986-02-21
发明人： Suthers, Mark Spencer , Este, Grantley Oliver , Streater, Richard William , MacLaurin, Blair Kenneth
IPC分类号： H03H9/02
CPC分类号： H03H9/02842
-
公开(公告)号：EP0200304A3
公开(公告)日：1987-12-23
申请号：EP86301324
申请日：1986-02-24
发明人： Este, Grantley Oliver , Suthers, Mark Spencer , Streater, Richard William , MacLaurin, Blair Kenneth
CPC分类号： H03H3/08
摘要： Each IDT (inter-digital transducer) (22, 24) of a SAW (surface acoustic wave) device (20) is formed on a thin resistive doped silicon film having the same pattern as the IDT, which improves adhesion of the IDT to the substrate. The silicon film also constitutes electro-acoustic absorbers (26, 28) between the IDTs and edges (40, 42) of the substrate, and can have a linearly tapered edge adjacent to each IDT to suppress reflections at the absorber boundary. The SAW device is formed by sputtering silicon onto the substrate, subsequently forming the IDTs, and then etching the silicon from areas where it is not wanted.
-
公开(公告)号：EP0237208A3
公开(公告)日：1989-06-07
申请号：EP87301398.1
申请日：1987-02-18
CPC分类号： H03H9/02874 , H03H9/02858 , H03H9/14517 , H03H9/1452 , H03H9/14547
摘要： A SAW (surface acoustic wave) device includes a substrate having thereon at least one apodized IDT (inter-digital transducer) (10). The axis (18) of the apodization pattern is inclined towards a driven conductive rail (14) of the IDT at the ends of the pattern, whereby the driven end fingers have a low capacitive coupling to a ground plane on which the substrate is supported. The capacitive coupling to the ground plane may additionally be reduced by supporting the substrate on the ground plane via an insulating support, whereby an air gap or the insulating support decreases the capacitance between the IDT and the ground plane.
-
公开(公告)号：EP0197640A3
公开(公告)日：1987-12-16
申请号：EP86301277
申请日：1986-02-21
发明人： Suthers, Mark Spencer , Este, Grantley Oliver , Streater, Richard William , MacLaurin, Blair Kenneth
IPC分类号： H03H09/02
CPC分类号： H03H9/02842
摘要： 57 Each IDT (inter-digital transducer) (12, 14) of a SAW (surface acoustic wave) device has a linearly tapered back edge formed by reflection-suppressing fingers (18, 26) of successively decreasing length spaced apart with a pitch of lambda/4 behind the active region (16, 24) of the IDT, where lambda is the wavelength of a SAW to be propagated, whereby [ SAW reflections at the back edge of the IDT are substantially eliminated. A thin resistive doped sili- r con film (40, 42) between the back edge of each IDT and the adjacent edge (36, 38) of the substrate absorbs waves propagated via this back edge. The film underlies the IDTs to provide improved adhesion to the substrate.
-
公开(公告)号：EP0200304A2
公开(公告)日：1986-12-10
申请号：EP86301324.9
申请日：1986-02-24
发明人： Este, Grantley Oliver , Suthers, Mark Spencer , Streater, Richard William , MacLaurin, Blair Kenneth
摘要： Each IDT (inter-digital transducer) (22, 24) of a SAW (surface acoustic wave) device (20) is formed on a thin resistive doped silicon film having the same pattern as the IDT, which improves adhesion of the IDT to the substrate. The silicon film also constitutes electro-acoustic absorbers (26, 28) between the IDTs and edges (40, 42) of the substrate, and can have a linearly tapered edge adjacent to each IDT to suppress reflections at the absorber boundary. The SAW device is formed by sputtering silicon onto the substrate, subsequently forming the IDTs, and then etching the silicon from areas where it is not wanted.
摘要翻译： SAW（表面声波）器件（20）的每个IDT（内部数字传感器）（22,24）形成在具有与IDT相同的图案的薄电阻掺杂硅膜上，这改善了IDT与 基质。 硅膜也构成了基片的IDT和边缘（40,42）之间的电声吸收器（26,28），并且可以具有与每个IDT相邻的线性锥形边缘以抑制吸收边界处的反射。 SAW器件通过将硅溅射到衬底上，随后形成IDT，然后从不需要的区域蚀刻硅来形成。
-
公开(公告)号：EP0197640A2
公开(公告)日：1986-10-15
申请号：EP86301277.9
申请日：1986-02-21
发明人： Suthers, Mark Spencer , Este, Grantley Oliver , Streater, Richard William , MacLaurin, Blair Kenneth
IPC分类号： H03H9/02
CPC分类号： H03H9/02842
摘要： 57 Each IDT (inter-digital transducer) (12, 14) of a SAW (surface acoustic wave) device has a linearly tapered back edge formed by reflection-suppressing fingers (18, 26) of successively decreasing length spaced apart with a pitch of lambda/4 behind the active region (16, 24) of the IDT, where lambda is the wavelength of a SAW to be propagated, whereby [ SAW reflections at the back edge of the IDT are substantially eliminated. A thin resistive doped sili- r con film (40, 42) between the back edge of each IDT and the adjacent edge (36, 38) of the substrate absorbs waves propagated via this back edge. The film underlies the IDTs to provide improved adhesion to the substrate.
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.011 秒)
