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公开(公告)号：EP2469709B1
公开(公告)日：2017-06-21
申请号：EP11194768.5
申请日：2011-12-21
Applicant: NGK Insulators, Ltd.
Inventor： Nakahara, Toshinao
IPC: H03H3/02 , H03H3/08 , H03H9/02 , H01L41/313 , H01L41/337
CPC classification number: H03H9/02574 , H01L41/313 , H01L41/337 , H03H3/02 , H03H3/08 , H03H9/02015
Abstract: In a composite substrate 10, a back surface 14b of a piezoelectric substrate 14 and a front surface 12a of a support substrate 12 are bonded to each other with an adhesive layer 16. The adhesive layer 16 includes a swelling portion 16a at an outer peripheral area thereof, and the piezoelectric substrate 14 is bonded to the support substrate 12 in an area excluding the swelling portion 16a. Accordingly, air bubbles do not easily enter between the swelling portion 16a of the adhesive layer 16 and the piezoelectric substrate 14, and separations caused by the air bubbles can be prevented. As a result, the support substrate and the piezoelectric substrate can be reliably bonded to each other with the adhesive layer including the swelling portion in the outer peripheral area thereof.
Abstract translation: 在复合基板10中，压电基板14的背面14b和支撑基板12的正面12a通过粘合剂层16彼此接合。粘合剂层16包括位于外围区域的隆起部分16a 并且压电基板14在除了隆起部分16a之外的区域中结合到支撑基板12。 因此，气泡不容易进入粘合剂层16的隆起部分16a和压电基板14之间，并且可以防止由气泡引起的分离。 结果，支撑基板和压电基板可以利用在其外周区域中包括隆起部分的粘合层而可靠地彼此结合。
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2.发明公开COMPOSITE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权复合基板，半导体元件和方法的半导体元件
公开(公告)号：EP2960925A4
公开(公告)日：2016-06-22
申请号：EP14754763
申请日：2014-02-18
Applicant: NGK INSULATORS LTD
Inventor： IDE AKIYOSHI , TAKAGAKI TATSURO , MIYAZAWA SUGIO , HORI YUJI , TAI TOMOYOSHI , HATTORI RYOSUKE
IPC: H01L21/02 , H01L21/683 , H03H3/08 , H03H9/145 , H03H9/25
CPC classification number: H01L21/6835 , B32B7/02 , B32B7/06 , B32B7/12 , B32B9/005 , B32B9/04 , B32B18/00 , B32B27/08 , B32B27/20 , B32B27/283 , B32B37/10 , B32B38/10 , B32B2264/105 , B32B2307/20 , B32B2307/206 , B32B2307/538 , B32B2309/02 , B32B2309/105 , B32B2457/00 , B32B2457/14 , H01L21/78 , H01L41/1873 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/25 , Y10T428/12597
Abstract: A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.
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公开(公告)号：EP2175556B1
公开(公告)日：2014-09-03
申请号：EP08790750.7
申请日：2008-06-30
Applicant: Murata Manufacturing Co. Ltd.
Inventor： TANAKA, Nobuhira , YAMAZAKI, Hisashi
CPC classification number: H03H9/059 , H01L2224/11 , H03H3/08 , H03H9/0222 , H03H9/02897 , H03H9/02929 , H03H9/02992 , H03H9/14541 , H03H9/725
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4.发明公开COMPOSITE SUBSTRATE, ELASTIC SURFACE WAVE DEVICE, AND METHOD FOR PRODUCING COMPOSITE SUBSTRATE 有权复合基材，为了制造基片可弯曲声表面波器件和方法
公开(公告)号：EP2736169A1
公开(公告)日：2014-05-28
申请号：EP13821781.5
申请日：2013-07-12
Applicant: NGK Insulators, Ltd.
Inventor： HORI, Yuji , HATTORI, Ryosuke , TAI, Tomoyoshi
CPC classification number: H03H9/64 , C04B37/02 , H01L41/312 , H03H3/02 , H03H3/08 , H03H9/02574 , H03H9/02622 , H03H9/02866 , H03H9/0538 , H03H9/059 , H03H9/0595 , H03H9/145 , H03H9/25
Abstract: In a composite substrate 10, a bonding surface 21 of a piezoelectric substrate 20 is an irregular surface which is partially planarized. The irregular surface which is partially planarized includes a plurality of protrusions 23, each having a flat portion 25 on the tip thereof. The piezoelectric substrate 20 and the supporting substrate 30 are directly bonded to each other at the flat portions 25. By forming the bonding surface 21 into an irregular surface (rough surface) and providing flat portions 25 at the same time, it is possible to secure a sufficient contact area between the piezoelectric substrate 20 and the supporting substrate 30. Accordingly, in the composite substrate in which the piezoelectric substrate 20 and the supporting substrate 30 are bonded to each other, the bonding surface 21 can be roughened and direct bonding can be performed. Furthermore, it is possible to obtain a surface acoustic wave device in which heat resistance is enhanced by performing direct bonding without using an adhesive, and also bulk waves are scattered because of the roughened bonding surface, thus improving characteristics.
Abstract translation: 在复合基板10，压电基片20的贴合面21是不规则的表面的所有被部分平坦化。 不规则表面的所有其被平坦化部分包括：突起23，其各自具有在前端的平坦部25种的多元性。 压电基板20和支撑基板30在平坦部分25直接键合到彼此通过形成粘贴面21成不规则表面（粗糙表面），并在同一时间提供平坦部25，所以能够确保 压电基板20和支撑基板之间的足够的接触面积30。因此，在将压电基板20和支撑基板30彼此接合的复合衬底，接合表面21可以被粗糙化，直接结合可以是 执行。 进一步，有可能获得其中耐热性的表面声波器件是通过不使用粘接剂上执行直接粘结增强，因此体波被散射由于粗糙接合面，从而提高特性。
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5.发明公开Composite substrate and method for manufacturing the composite substrate 有权Verbundstoffsubstrat和Verfahren zur Herstellung des Verbundstoffsubstrats
公开(公告)号：EP2469709A3
公开(公告)日：2014-04-09
申请号：EP11194768.5
申请日：2011-12-21
Applicant: NGK Insulators, Ltd.
Inventor： Nakahara, Toshinao
CPC classification number: H03H9/02574 , H01L41/313 , H01L41/337 , H03H3/02 , H03H3/08 , H03H9/02015
Abstract: In a composite substrate 10, a back surface 14b of a piezoelectric substrate 14 and a front surface 12a of a support substrate 12 are bonded to each other with an adhesive layer 16. The adhesive layer 16 includes a swelling portion 16a at an outer peripheral area thereof, and the piezoelectric substrate 14 is bonded to the support substrate 12 in an area excluding the swelling portion 16a. Accordingly, air bubbles do not easily enter between the swelling portion 16a of the adhesive layer 16 and the piezoelectric substrate 14, and separations caused by the air bubbles can be prevented. As a result, the support substrate and the piezoelectric substrate can be reliably bonded to each other with the adhesive layer including the swelling portion in the outer peripheral area thereof.
Abstract translation: 在复合基板10中，压电基板14的后表面14b和支撑基板12的前表面12a通过粘合剂层16彼此接合。粘合剂层16包括在外周区域 并且在除了膨胀部16a之外的区域中将压电基板14接合到支撑基板12。 因此，气泡不容易进入粘合层16的膨润部16a和压电基板14之间，可以防止由气泡引起的分离。 结果，支撑基板和压电基板可以在其外周区域中包括膨胀部分的粘合剂层彼此可靠地接合。
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Patent Agency Ranking
公开(公告)号：EP2175556A4
公开(公告)日：2013-08-07
申请号：EP08790750
申请日：2008-06-30
Applicant: MURATA MANUFACTURING CO
Inventor： TANAKA NOBUHIRA , YAMAZAKI HISASHI
CPC classification number: H03H9/059 , H01L2224/11 , H03H3/08 , H03H9/0222 , H03H9/02897 , H03H9/02929 , H03H9/02992 , H03H9/14541 , H03H9/725
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7.发明公开DISPOSITIF A ONDES ACOUSTIQUES COMPRENANT UN FILTRE A ONDES DE SURFACE ET UN FILTRE A ONDES DE VOLUME ET PROCEDE DE FABRICATION 有权具有产生表面波滤波器和音量滤波器和过程SCHALLWELLENVORRICHTUG
公开(公告)号：EP2486655A1
公开(公告)日：2012-08-15
申请号：EP10760693.1
申请日：2010-10-04
Inventor： DEGUET, Chrystel , CLAVELIER, Laurent , DEFAY, Emmanuel , REINHARDT, Alexandre
CPC classification number: H03H3/08 , H03H3/02 , H03H2003/0071 , Y10T29/42
Abstract: The invention relates to an acoustic wave device comprising at least one surface acoustic wave (SAW) filter and one bulk acoustic wave (BAW) filter, characterized in that it includes, on a substrate comprising a second piezoelectric material (P
iézo2 ): a stack of layers comprising at least a first metal layer (M
1 ) and a layer of a first monocrystalline piezoelectric material (P
iézo1 ), wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization (M
2 ) at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization (M
3 ) at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material. The invention also relates to a method for making the device of the invention, advantageously using application steps similar to those used is the Smart Cut
TM method or mechanical bonding/thinning steps.-
公开(公告)号：EP2469709A2
公开(公告)日：2012-06-27
申请号：EP11194768.5
申请日：2011-12-21
Applicant: NGK Insulators, Ltd.
Inventor： Nakahara, Toshinao
CPC classification number: H03H9/02574 , H01L41/313 , H01L41/337 , H03H3/02 , H03H3/08 , H03H9/02015
Abstract: In a composite substrate 10, a back surface 14b of a piezoelectric substrate 14 and a front surface 12a of a support substrate 12 are bonded to each other with an adhesive layer 16. The adhesive layer 16 includes a swelling portion 16a at an outer peripheral area thereof, and the piezoelectric substrate 14 is bonded to the support substrate 12 in an area excluding the swelling portion 16a. Accordingly, air bubbles do not easily enter between the swelling portion 16a of the adhesive layer 16 and the piezoelectric substrate 14, and separations caused by the air bubbles can be prevented. As a result, the support substrate and the piezoelectric substrate can be reliably bonded to each other with the adhesive layer including the swelling portion in the outer peripheral area thereof.
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公开(公告)号：EP1635459A4
公开(公告)日：2011-03-30
申请号：EP05703310
申请日：2005-01-05
Applicant: MURATA MANUFACTURING CO
Inventor： KANDO HAJIME
IPC: H03H9/02 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/23 , H01L41/29 , H01L41/338 , H03H3/08 , H03H9/10 , H03H9/145 , H03H9/25
CPC classification number: H04R31/00 , H03H3/08 , H03H9/0222 , H03H9/02929 , H03H9/059 , H03H9/1078 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908 , Y10T29/49798
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10.发明公开INTEGRATED NITRIDE AND SILICON CARBIDE-BASED DEVICES AND METHODS OF FABRICATING INTEGRATED NITRIDE-BASED DEVICES 有权集成器件的氮化物和碳化硅AND METHOD FOR PRODUCING集成器件的氮化物
公开(公告)号：EP2255387A1
公开(公告)日：2010-12-01
申请号：EP09722679.9
申请日：2009-02-09
Applicant: Cree, Inc.
Inventor： SHEPPARD, Scott T.
IPC: H01L21/8252 , H01L21/8258 , H01L27/06
CPC classification number: H01L27/0605 , H01L21/8213 , H01L21/8252 , H01L21/8258 , H01L27/20 , H01L29/2003 , H01L29/7787 , H03H3/08 , H03H9/02228 , H03H9/02574 , H03H9/02976 , H03H9/0542
Abstract: Monolithic electronic devices including a common nitride epitaxial layer are provided. A first type of nitride device is provided on the common nitride epitaxial layer including a first at least one implanted n-type region on the common nitride epitaxial layer. The first at least one implanted n-type region has a first doping concentration greater than a doping concentration of the common nitride epitaxial layer. A second type of nitride device, different from the first type of nitride device, including a second at least one implanted n-type region is provided on the common nitride epitaxial layer. The second at least one implanted n-type region is different from the first at least one implanted n-type region and has a second doping concentration that is greater than the doping concentration of the common nitride epitaxial layer. A first plurality of electrical contacts are provided on the first at least one implanted n-type region. The first plurality of contacts define a first electronic device of the first type of nitride device. A second plurality of electrical contacts are provided on the second at least one n-type implanted region. The second plurality of contacts define a second electronic device of the second type of electronic device. Corresponding methods are also disclosed.
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