公开(公告)号：EP3358626A1

公开(公告)日：2018-08-08

申请号：EP17154466.1

申请日：2017-02-02

申请人： NXP B.V.

发明人： Al-Sa'di, Mahmoud Shehab Mohammad ,  Magnee, Petrus Hubertus Cornelis ,  Donkers, Josephus Theodorus Marinus

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/10

CPC分类号： H01L21/22 ,  H01L21/027 ,  H01L21/266 ,  H01L21/28158 ,  H01L21/823412 ,  H01L29/1041 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of making a semiconductor switch device. The method includes providing a semiconductor substrate having a major surface and a first semiconductor region having a first conductivity type located adjacent the major surface. The method also includes depositing a gate dielectric on the major surface. The method further includes implanting ions into the first semiconductor region through a mask positioned over the first semiconductor region, thereby to form a well region located in the first semiconductor region. The well region has a second conductivity type different to the first conductivity type. The method also includes depositing and patterning a gate electrode material on the gate dielectric to form a gate electrode located directly above the well region. The method further includes implanting ions into the first semiconductor region to form a source region and a drain region of the semiconductor switch device on either side of the gate electrode.