利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.01 秒)

    Bipolar transistor
    1.
    发明公开
    Bipolar transistor 审中-公开
    Bipolartransistor

    公开(公告)号：EP2996153A1

    公开(公告)日：2016-03-16

    申请号：EP14184549.5

    申请日：2014-09-12

    申请人： NXP B.V.

    发明人： Vanhoucke, Tony ,  Dinh, Viet Thanh ,  Magnee, Petrus Hubertus Cornelis ,  Ponky, Ivo ,  Klaassen, Dirk ,  Al-Sa'di, Mahmoud Shehab Mohammad

    IPC分类号： H01L29/737 ,  H01L21/331 ,  H01L29/06 ,  H01L29/36 ,  H01L29/08

    CPC分类号： H01L29/063 ,  H01L21/324 ,  H01L29/0649 ,  H01L29/0821 ,  H01L29/36 ,  H01L29/41708 ,  H01L29/66242 ,  H01L29/6625 ,  H01L29/735 ,  H01L29/7378 ,  H03F3/21

    摘要： A bipolar transistor includes a collector including a laterally extending drift region. The bipolar transistor also includes a base located above the collector. The bipolar transistor further includes an emitter located above the base. The bipolar transistor also includes a doped region having a conductivity type that is different to that of the collector. The doped region extends laterally beneath the collector to form a junction at a region of contact between the doped region and the collector. The doped region has a non-uniform lateral doping profile. A doping level of the doped region is highest in a part of the doped region closest to a collector-base junction of the bipolar transistor.

    摘要翻译： 双极晶体管包括具有横向延伸漂移区的集电极。 双极晶体管还包括位于集电极上方的基极。 双极晶体管还包括位于基极上方的发射极。 双极晶体管还包括具有不同于集电极的导电类型的掺杂区域。 掺杂区域在集电极之下横向延伸以在掺杂区域和集电极之间的接触区域处形成结。 掺杂区域具有非均匀的横向掺杂分布。 在最接近双极晶体管的集电极 - 基极结的掺杂区域的一部分中，掺杂区域的掺杂水平最高。

    SEMICONDUCTOR SWITCH DEVICE
    2.
    发明公开
    SEMICONDUCTOR SWITCH DEVICE 审中-公开
    半导体开关装置

    公开(公告)号：EP3285286A1

    公开(公告)日：2018-02-21

    申请号：EP16184454.3

    申请日：2016-08-17

    申请人： NXP B.V.

    发明人： Al-Sa'di, Mahmoud Shehab Mohammad ,  Magnee, Petrus Hubertus Cornelis ,  Donkers, Johannes Josephus Theodorus Marinus ,  Brunets, Ihor ,  Malai, Joost

    IPC分类号： H01L21/336 ,  H01L29/78

    CPC分类号： H01L29/6659 ,  H01L21/265 ,  H01L29/6656 ,  H01L29/7833

    摘要： A method of making a semiconductor switch device and a semiconductor switch device made according to the method. The method includes depositing a gate dielectric on a major surface of a substrate. The method also includes depositing and patterning a gate electrode on the gate dielectric. The method further includes depositing an oxide to cover the top surface and sidewall(s) of the gate electrode. The method also includes, after depositing the oxide, performing a first ion implantation process at a first implantation dosage for forming a lightly doped drain region of the switch device. The method further includes forming sidewall spacers on the sidewall(s) of the gate electrode. The method also includes performing a second ion implantation process at a second implantation dosage for forming a source region and a drain region of the semiconductor switch device. The second implantation dosage is greater than the first implantation dosage.

    摘要翻译： 一种制造半导体开关器件的方法和根据该方法制造的半导体开关器件。 该方法包括在衬底的主表面上沉积栅极电介质。 该方法还包括在栅极电介质上沉积并图案化栅电极。 该方法还包括沉积氧化物以覆盖栅电极的顶表面和侧壁。 该方法还包括在沉积氧化物之后，以第一注入剂量执行第一离子注入工艺以形成开关器件的轻掺杂漏极区。 该方法还包括在栅电极的侧壁上形成侧壁间隔物。 该方法还包括以第二注入剂量执行第二离子注入工艺，用于形成半导体开关器件的源极区和漏极区。 第二植入剂量大于第一植入剂量。

    SEMICONDUCTOR SWITCH DEVICE AND A METHOD OF MAKING A SEMICONDUCTOR SWITCH DEVICE
    4.
    发明公开
    SEMICONDUCTOR SWITCH DEVICE AND A METHOD OF MAKING A SEMICONDUCTOR SWITCH DEVICE 审中-公开
    半导体开关装置和制造半导体开关装置的方法

    公开(公告)号：EP3200235A1

    公开(公告)日：2017-08-02

    申请号：EP16153174.4

    申请日：2016-01-28

    申请人： NXP B.V.

    发明人： Al-Sa'di, Mahmoud Shehab Mohammad ,  Donkers, Johannes Josephus Theodorus Marinus ,  Magnee, Petrus Hubertus Cornelis ,  Brunets, Ihor ,  Vohra, Anurag ,  Slotboom, Jan Willem

    IPC分类号： H01L29/06 ,  H01L27/02 ,  H01L29/10

    CPC分类号： H01L29/1095 ,  H01L21/823437 ,  H01L27/0222 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/66568 ,  H01L29/78

    摘要： A semiconductor switch device for switching an RF signal and a method of making the same. The device includes a first semiconductor region having a first conductivity type. The device also includes a source region and a drain region located in the first semiconductor region. The source region and the drain region have a second conductivity type. The second conductivity type is different to the first conductivity type. The device further includes a gate separating the source region from the drain region. The device also includes at least one sinker region having the second conductivity type. Each sinker region is connectable to an external potential for drawing minority carriers away from the source and drain regions to reduce a leakage current at junctions between the source and drain regions and the first semiconductor region.

    摘要翻译： 一种用于切换RF信号的半导体开关器件及其制造方法。 该器件包括具有第一导电类型的第一半导体区域。 该器件还包括位于第一半导体区域中的源极区域和漏极区域。 源极区和漏极区具有第二导电类型。 第二导电类型与第一导电类型不同。 该器件还包括将源极区与漏极区分开的栅极。 该器件还包括具有第二导电类型的至少一个下沉区。 每个下沉区域可连接到外部电势，用于将少数载流子从源极和漏极区域抽出，以减少在源极和漏极区域与第一半导体区域之间的结处的漏电流。