公开(公告)号：EP2371003B1

公开(公告)日：2018-07-04

申请号：EP08875951.9

申请日：2008-11-27

申请人： NXP USA, Inc.

发明人： REYNES, Jean Michel ,  BERNOUX, Beatrice ,  ESCOFFIER, Rene ,  JALBAUD, Pierre ,  DERAM, Ivana

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L23/485

CPC分类号： H01L29/7808 ,  H01L24/02 ,  H01L24/05 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7802 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/4813 ,  H01L2224/4847 ,  H01L2224/49171 ,  H01L2924/01079 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00015 ,  H01L2924/00

摘要： A transistor power switch device comprising a semiconductor body presenting opposite first and second faces, an array of vertical field-effect transistor elements for carrying current between the first and second faces is provided. The array of transistor elements comprises at the first face an array of source regions of a first semiconductor type, at least one body region of a second semiconductor type opposite to the first type interposed between the source regions and the second face, at least one control electrode for switchably controlling flow of the current through the second transistor region, and a conductive layer contacting the source regions and insulated from the control electrode by at least one insulating layer.