摘要:
A transistor power switch device comprising a semiconductor body presenting opposite first and second faces, an array of vertical field-effect transistor elements for carrying current between the first and second faces is provided. The array of transistor elements comprises at the first face an array of source regions of a first semiconductor type, at least one body region of a second semiconductor type opposite to the first type interposed between the source regions and the second face, at least one control electrode for switchably controlling flow of the current through the second transistor region, and a conductive layer contacting the source regions and insulated from the control electrode by at least one insulating layer.
摘要:
Disclosed is an integrated circuit comprising a substrate having a major surface; a directional light sensor, the directional light sensor comprising a plurality of photodetectors on a region of said major surface, said plurality of photodetectors comprising a set of first photodetectors for detecting light from a first direction and a set of second photodetectors for detecting light from a second direction, wherein a first photodetector is located adjacent to a second photodetector; and a light blocking structure comprising a first portion extending from said major surface in between the first photodetector and the second photodetector; and a second portion extending from the first portion and at least partially overhanging at least one of the first photodetector and the second photodetector. A device including such an IC and a method of manufacturing such an IC are also disclosed.
摘要:
The invention relates to a circuit assembly (100) having at least two optoelectronic semiconductor components (120, 130), characterized in that a first optoelectronic semiconductor component (120) is arranged with an n-conducting surface (122) opposite an electrically conductive carrier surface (110) and is electrically conductively connected to the carrier surface (110) and in that a second optoelectronic semiconductor component (130) is arranged with a p-conducting surface (134) opposite the carrier surface (110) and is electrically conductively connected to the carrier surface (110).
摘要:
A method of processing a semiconductor substrate to remove undesired material therefrom or to prepare a surface of the semiconductor substrate for subsequent bonding wherein the substrate comprises a leadframe comprising dies, bond pads, contacts, and wires, the method comprises the step of contacting the substrate with a liquid cleaning composition and compositions useful in the method.
摘要:
The invention relates to a ribbon, preferably a bonding ribbon for bonding in microelectronics, comprising a first layer comprising copper with a surface and at least a coating layer superimposed over the surface of the first layer, wherein the coating layer comprises aluminium, and an intermediate layer, wherein in a cross-sectional view of the ribbon the area share of the first layer is in the range of from 50 to 96 %, based on the total area of the cross-section of the ribbon, wherein the aspect ratio between the width and the height of the ribbon in a cross-sectional view is in the range of from 0.03 to less than 0.8, wherein the ribbon has a cross-sectional area in the range of from 25'000 µm 2 to 800'000 µm 2 , wherein the intermediate layer is arranged between the first layer and the coating layer, wherein the intermediate layer comprises at least one intermetallic phase comprising material of the first layer and material of the coating layer. The invention further relates to a process for making a wire, to a wire obtainable by said process, to an electric device comprising at least two elements and at least aforementioned wire, to a propelled device comprising said electric device and to a process of connecting two elements through aforementioned wire by wedge-bonding.
摘要:
A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface.