公开(公告)号：EP4418831A1

公开(公告)日：2024-08-21

申请号：EP22880618.8

申请日：2022-08-04

申请人： National Institute of Advanced Industrial Science and Technology ,  ULVAC, Inc.

发明人： TOMINAGA, Junji ,  MIYATA, Noriyuki ,  ASANUMA, Shutaro ,  MIYAGUCHI, Yuusuke ,  SAITO, Kazuya ,  JINBO, Takehito ,  HORITA, Kazumasa ,  MASUDA, Takeshi

IPC分类号： H10B99/00 ,  H01L27/105 ,  H01L21/363 ,  H01L21/365 ,  H01L29/06 ,  H01L29/15 ,  H10N70/00

CPC分类号： H10B63/10 ,  H01L21/02107 ,  H01L27/105 ,  H01L29/06 ,  H10N70/00 ,  H01L29/15

摘要： Provided is a method of manufacturing a crystallized stacked structural body excellent in manufacturing efficiency. The present invention is characterized by including: a stacked structural body-forming step of forming a stacked structural body (7) in which an Sb2Te3 layer (5) having a thickness of from 2 nm to 10 nm and a GeTe layer (6) having a thickness of more than 0 nm and 4 nm or less are stacked, and a trace addition element (S or Se) is incorporated at a content of from 0.05 at% to 10.0 at% into the GeTe layer (6) on an orientation control layer (4) configured to give, to the Sb2Te3 layer (5) and the GeTe layer (6) at the time of their crystallization, a common crystal axis, the step being performed under a temperature of less than 100°C including room temperature; an Sb2Te3 layer-crystallizing step of crystallizing the Sb2Te3 layer (5) by heating and holding the stacked structural body (7) at a first crystallization temperature of 100°C or more and less than 170°C; and a GeTe layer-crystallizing step of crystallizing the GeTe layer (6) by heating and holding the stacked structural body (7) in which the Sb2Te3 layer (5) is crystallized at a second crystallization temperature of 170°C or more and 400°C or less.

公开(公告)号：EP2065889B1

公开(公告)日：2010-10-20

申请号：EP07792656.6

申请日：2007-08-17

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： SHIMA, Takayuki ,  YAMAKAWA, Yuzo ,  FONS, James Paul ,  TOMINAGA, Junji

IPC分类号： G11B7/24 ,  G11B7/254 ,  G11B7/257

CPC分类号： G11B7/252 ,  G11B7/24 ,  G11B7/2534 ,  G11B7/259 ,  G11B2007/24306 ,  G11B2007/2432 ,  G11B2007/25706 ,  Y10T428/21

公开(公告)号：EP1625580A1

公开(公告)日：2006-02-15

申请号：EP04734438.7

申请日：2004-05-21

申请人： SAMSUNG ELECTRONICS CO., LTD. ,  National Institute of Advanced Industrial Science and Technology

发明人： KIM, Joo-Ho ,  PARK, In-Sik 664-803 Shinnamushil Kunyoung Apt.96 ,  KUWAHARA, Masashi ,  TOMINAGA, Junji ,  SHIMA, Takayuki

IPC分类号： G11B7/24

CPC分类号： G11B7/00452 ,  G11B7/261 ,  G11B7/263 ,  Y10S428/913

摘要： A multi-layer structure whose volume changes when a temperature exceeds a predetermined threshold value, a microscopic structure drawing method that involves emitting a laser beam onto the multi-layer structure to create a temperature distribution within a beam spot and performing microscopic recording on a portion of the beam spot having a temperature higher than the threshold value, an optical disc master, and a mastering method using the same, where the multi-layer structure includes a substrate and a transformation layer formed on the substrate, wherein a volume of a portion of the transformation layer irradiated by a laser beam changes when the temperature of the portion exceeds a predetermined temperature. The microscopic structure drawing method includes emitting the laser beam onto a predetermined region of the transformation layer and heating the region of the transformation layer irradiated by the laser beam beyond a predetermined temperature so that the heated region can undergo a volume change.

摘要翻译： 一种多层结构，其体积发生变化时的温度超过预定的阈值时，微观结构的描绘方法并涉及将激光束发射到多层结构来创建的束斑内的温度分布和在一部分执行微观记录 具有比阈值更高的温度下，向光盘母盘，并使用相同的，其中所述多层结构包括基板和形成于该基板的变换层母盘方法的束斑，worin的部分的体积的 通过激光束照射的转换层的变化的时候，部分的温度超过预定温度。 显微结构图方法包括发射激光束到转化层的预定区域并通过加热激光束照射超过预定温度的转换层的区域上，从而没有被加热区域可以经历体积变化。

公开(公告)号：EP1609139B1

公开(公告)日：2009-02-18

申请号：EP04724900.8

申请日：2004-03-31

申请人： SAMSUNG ELECTRONICS CO., LTD. ,  National Institute of Advanced Industrial Science and Technology

发明人： .KIM, Joo-Ho ,  TOMINAGA, Junji ,  YOON, Du-Seop

IPC分类号： G11B7/007

CPC分类号： G11B7/252 ,  B82Y20/00 ,  B82Y30/00 ,  G11B7/24 ,  G11B7/243 ,  G11B7/258 ,  G11B7/266

摘要： A read-only recording medium for achieving a carrier-to-noise ratio (CNR) using a super-resolution near-field structure (Super-RENS) on which information has been prerecorded includes a substrate having the information recorded on its surface, a reflective layer formed from a phase change material on the substrate, a first dielectric layer formed on the reflective layer, and a mask layer formed from metal oxide or nanoparticles on the first dielectric layer.

公开(公告)号：EP1914743A1

公开(公告)日：2008-04-23

申请号：EP06781939.1

申请日：2006-07-28

申请人： National Institute of Advanced Industrial Science and Technology ,  Samsung Electronics Co., Ltd.

发明人： SHIMA, Takayuki ,  TOMINAGA, Junji ,  NAKANO, Takashi ,  KIKUKAWA, Takashi ,  FUKUZAWA, Narutoshi ,  KOBAYASHI, Tatsuhiro ,  KIM, Joo-ho ,  HWANG, In-oh

IPC分类号： G11B7/24

CPC分类号： G11B7/252 ,  G11B7/00455 ,  G11B7/24

摘要： An optical disk primarily includes a recording layer and a viscosity-variable material layer. When a laser beam is irradiated to reproduce a record written on the recording layer, part of the crystalline thin layer of the viscosity-variable material layer is softened to vary the optical constant of the softened region. Consequently, a plane having discontinuous optical constants is produced at the boundary between the softened region and the other region, so that a ring-shaped specific region is produced in a light spot. The ring-shaped specific region allows record patterns smaller than or equal to the resolution limit to be reproduced with the same signal intensity as that of the other record patterns larger than the resolution limit.

摘要翻译： 光盘主要包括记录层和粘性可变材料层。 当激光束被照射以再现写在记录层上的记录时，粘性可变材料层的一部分晶体薄层被软化以改变软化区域的光学常数。 因此，在软化区域和其他区域之间的边界处产生具有不连续光学常数的平面，从而在光斑中产生环状特定区域。 环形特定区域允许以与分辨率极限大的其他记录图案的信号强度相同的信号强度来再现小于或等于分辨率极限的记录图案。

公开(公告)号：EP1913592A1

公开(公告)日：2008-04-23

申请号：EP06823629.8

申请日：2006-08-08

申请人： Samsung Electronics Co., Ltd. ,  National Institute of Advanced Industrial Science and Technology

发明人： KIM, Joo-Ho ,  HWANG, In-Oh ,  FUKUZAWA, Narutoshi ,  TOMINAGA, Junji ,  KIKUKAWA, Takashi ,  KOBAYASHI, Tatsuhiro ,  NAKANO, Takashi ,  SHIMA, Takayuki

IPC分类号： G11B7/24

CPC分类号： G11B7/252 ,  G11B7/00452 ,  G11B7/0052 ,  G11B7/24 ,  G11B7/243 ,  G11B2007/24304 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24314 ,  G11B2007/24316

摘要： A super-resolution information recording medium, a recording/reproducing apparatus, and a recording/reproducing method uses an information recording medium provides a super-resolution effect by fluid bubbles. The fluid bubbles are formed in at least a portion of the medium by a light beam radiated to reproduce a signal from the information recording medium. Accordingly, the super-resolution information recording medium has improved optical characteristics, so that better recording/reproduction is possible.

摘要翻译： 超分辨率信息记录介质，记录/再现装置以及记录/再现方法使用信息记录介质通过流体泡提供超分辨率效果。 通过辐射的光束在介质的至少一部分中形成流体气泡，以再现来自信息记录介质的信号。 因此，超分辨率信息记录介质具有改进的光学特性，使得更好的记录/再现成为可能。

公开(公告)号：EP1609139A1

公开(公告)日：2005-12-28

申请号：EP04724900.8

申请日：2004-03-31

申请人： SAMSUNG ELECTRONICS CO., LTD. ,  National Institute of Advanced Industrial Science and Technology

发明人： .KIM, Joo-Ho ,  TOMINAGA, Junji ,  YOON, Du-Seop

IPC分类号： G11B7/007

CPC分类号： G11B7/252 ,  B82Y20/00 ,  B82Y30/00 ,  G11B7/24 ,  G11B7/243 ,  G11B7/258 ,  G11B7/266

摘要： A read-only recording medium for achieving a carrier-to-noise ratio (CNR) using a super-resolution near-field structure (Super-RENS) on which information has been prerecorded includes a substrate having the information recorded on its surface, a reflective layer formed from a phase change material on the substrate, a first dielectric layer formed on the reflective layer, and a mask layer formed from metal oxide or nanoparticles on the first dielectric layer.

公开(公告)号：EP1504448A1

公开(公告)日：2005-02-09

申请号：EP03723471.3

申请日：2003-05-16

申请人： Samsung Electronics Co., Ltd. ,  National Institute of Advanced Industrial Science and Technology

发明人： KIM, Joo-Ho ,  TOMINAGA, Junji

IPC分类号： G11B7/24

CPC分类号： B82Y10/00 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B7/2585 ,  G11B7/259 ,  G11B2007/24306 ,  Y10T428/21

摘要： A simple-structured recording medium without a mask layer and information recording and reproducing methods, which resolve thermal stability related problems arising during reproduction, the recording medium including a high melting point recording layer between first and second dielectric layers. The method of recording information on the recording medium involves irradiating a laser beam onto the recording medium to induce reaction and diffusion in the high melting point recording layer and the first and second dielectric layers. The method of reproducing information recorded on such a super-resolution near-field recording medium by the above method involves generating plasmon using crystalline particles of the high melting point recording layer and the first and second dielectric layers as a scatter source to reproduce information regardless of a diffraction limit of a laser used.

公开(公告)号：EP1488451A1

公开(公告)日：2004-12-22

申请号：EP03713052.3

申请日：2003-03-28

申请人： Samsung Electronics Co., Ltd. ,  National Institute of Advanced Industrial Science and Technology

发明人： KIM, Joo-Ho ,  TOMINAGA, Junji

IPC分类号： H01L21/324

CPC分类号： H01L29/247 ,  H01L21/76888 ,  H01L23/5258 ,  H01L27/10873 ,  H01L29/263 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are methods for manufacturing a compound semiconductor and a compound insulator using chemical reaction and diffusion induced by heating, a compound semiconductor and a compound insulator formed using the methods, and a photocell, an electronic circuit, a transistor, and a memory including the compound semiconductor or the compound insulator. The method for manufacturing a compound semiconductor or a compound insulator involves forming a stacked structure including a rare earth transition metal intermediate layer, which is highly reactive to oxygen and/or sulfur, interposed between dielectric layers containing oxygen and/or sulfur and heating the stacked structure to induce chemical reaction and diffusion between the dielectric layers and the intermediate layer, wherein the heating is performed at different temperatures for the compound semiconductor and the compound insulator.