公开(公告)号：EP2293323A1

公开(公告)日：2011-03-09

申请号：EP09746471.3

申请日：2009-04-17

申请人： National University Corporation Tohoku Unversity ,  Foundation for Advancement of International Science

发明人： OHMI, Tadahiro ,  TERAMOTO, Akinobu ,  TANAKA, Hiroaki ,  ISOGAI, Tatsunori

IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L29/417 ,  H01L29/78

CPC分类号： H01L21/28518 ,  H01L21/26513 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66575

摘要： A semiconductor device manufacturing method includes the steps of ion-implanting a p-type or an n-type impurity into a Si layer portion to become a p-type or an n-type contact region of a semiconductor device, forming a metal film for a contact on a surface of the contact region without performing heat treatment for activating implanted ions after the ion-implanting step, and forming a silicide of a metal of the metal film by causing the metal to react with the Si layer portion by heating. It is desired to simultaneously perform the step of forming the silicide and the step of activating the implanted ions by heat treatment after the metal film is formed.

摘要翻译： 半导体器件制造方法包括将p型或n型杂质离子注入到Si层部分中以成为半导体器件的p型或n型接触区域的步骤，形成用于 在离子注入步骤之后，在接触区域的表面上的接触不进行激活注入离子的热处理，并且通过加热使金属与Si层部分反应而形成金属膜的金属的硅化物。 期望同时进行形成硅化物的步骤和在形成金属膜之后通过热处理激活注入的离子的步骤。