公开(公告)号：EP1926138A1

公开(公告)日：2008-05-28

申请号：EP05772572.3

申请日：2005-08-18

申请人： ADVANTEST CORPORATION ,  National University Corporation Tohoku Unversity

发明人： OKAYASU, Toshiyuki ,  SUGAWA, Shigetoshi ,  TERAMOTO, Akinobu

IPC分类号： H01L21/66 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01L23/544 ,  G01R31/31718 ,  G11C2029/4402 ,  H01L21/76254 ,  H01L22/14 ,  H01L2223/5444 ,  H01L2924/0002 ,  Y10T29/49004 ,  H01L2924/00

摘要： Provided is a device identifying method for identifying an electronic device including an actual operation circuit operating at a time of actual operation of the electronic device and a test circuit provided with a plurality of test elements and operating at a time of testing of the electronic device, the device identifying method including: a property measuring step of measuring electric properties respectively of the plurality of test elements; an identification information storing step of storing the electric properties respectively of the plurality of test elements, as identification information of the electronic device; an identification information obtaining step of measuring, in an attempt to identify a target electronic device, electronic properties of a plurality of test elements included in the target electronic device, thereby obtaining identification information of the target electronic device; and a matching step of comparing the identification information obtained in the identification information obtaining step and the identification information stored in the identification information storing step, and judging that, when there is matching in identification information, the target electronic device whose identification information is obtained in the identification information obtaining step is the electronic device whose identification information is stored in the identification information storing step.

摘要翻译： 本发明提供一种设备识别用于电子装置，包括对在电子装置并设置有测试元件的多个测试电路的实际手术的时间操作的实际工作电路的识别与在电子装置的测试的时间操作方法， 该设备识别方法，包括：一个属性测量分别测定试验元件的多个电特性的步骤; 上识别信息存储分别存储测试元件的多个电特性，作为电子装置的识别信息的步骤; 的识别信息在试图识别目标电子设备获取的测量的步骤，在测试元件的多个电子特性包括在目标电子装置中，从而得到所述目标电子装置的标识信息; 并且比较在识别信息获取步骤，并存储在识别信息存储步骤中的识别信息所获得的识别信息，并判断的匹配步骤的是，当存在于识别信息，所述目标电子装置，它的识别信息中所获得的匹配 识别信息取得步骤是将电子装置，它的标识信息被存储在识别信息存储步骤。

公开(公告)号：EP3587555A1

公开(公告)日：2020-01-01

申请号：EP18757371.2

申请日：2018-02-23

申请人： Japan Vam & Poval Co., Ltd. ,  National University Corporation Tohoku Unversity

发明人： OHARUDA, Akinobu ,  KIMURA, Yoshihiro ,  GOTO, Masafumi

IPC分类号： C12M3/00 ,  A61K35/12 ,  A61K35/22 ,  A61K35/26 ,  A61K35/28 ,  A61K35/30 ,  A61K35/39 ,  A61K35/407 ,  A61K35/545 ,  A61K35/55 ,  C12N11/04 ,  A61P3/00 ,  A61P5/00

摘要： To provide a cell or tissue embedding device highly capable of supplying a physiologically active substance, by curbing the reduction of living cells or living tissue in the process of preparing a PVA gel containing the living cells or living tissue.
An aqueous gel to form an immunoisolation layer of a cell or tissue embedding device has, as its component, a polyvinyl alcohol resin having a syndiotacticity of 32 to 40% in triad.

公开(公告)号：EP2442357A3

公开(公告)日：2012-07-11

申请号：EP12150923.6

申请日：2007-07-12

申请人： National University Corporation Tohoku Unversity ,  Foundation for Advancement of International Science

发明人： Ohmi, Tadahiro ,  Teramoto, Akinobu ,  Kuroda, Rihito

IPC分类号： H01L21/8238 ,  H01L29/45 ,  H01L29/78

CPC分类号： H01L29/045 ,  H01L21/02057 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823807 ,  H01L21/823835 ,  H01L21/82385 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/518 ,  H01L29/785 ,  H01L2029/7857

摘要： The present invention concerns a CMOS semiconductor device comprising at least a pair of n-channel transistor (100n) and a p-channel transistor (100p), in which each of said n-channel and said p-channel transistors is comprised of a channel region, a source region (17,18) formed at one of both sides of said channel region, a drain region (17,18) formed at another one of the both sides of said channel region, two first electrodes (21,22) electrically connected to said source and said drain regions (531,532), respectively, and a second electrode (16) formed on said channel region through a gate insulating film (15), the interface between said channel region and said gate insulating film (15) is made flat at the atomic level, at least contact portions of said first electrodes respectively contacting the source and the drain regions (17) of said n-channel transistor (100n) are formed of a first metal silicide, at least contact portions of said second electrodes respectively contacting the source and the drain regions (18) of said p-channel transistor (100p) are formed of a second metal silicide different from said first metal silicide, and said CMOS semiconductor device is an accumulation-mode transistor.

公开(公告)号：EP2293323A1

公开(公告)日：2011-03-09

申请号：EP09746471.3

申请日：2009-04-17

申请人： National University Corporation Tohoku Unversity ,  Foundation for Advancement of International Science

发明人： OHMI, Tadahiro ,  TERAMOTO, Akinobu ,  TANAKA, Hiroaki ,  ISOGAI, Tatsunori

IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L29/417 ,  H01L29/78

CPC分类号： H01L21/28518 ,  H01L21/26513 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66575

摘要： A semiconductor device manufacturing method includes the steps of ion-implanting a p-type or an n-type impurity into a Si layer portion to become a p-type or an n-type contact region of a semiconductor device, forming a metal film for a contact on a surface of the contact region without performing heat treatment for activating implanted ions after the ion-implanting step, and forming a silicide of a metal of the metal film by causing the metal to react with the Si layer portion by heating. It is desired to simultaneously perform the step of forming the silicide and the step of activating the implanted ions by heat treatment after the metal film is formed.

摘要翻译： 半导体器件制造方法包括将p型或n型杂质离子注入到Si层部分中以成为半导体器件的p型或n型接触区域的步骤，形成用于 在离子注入步骤之后，在接触区域的表面上的接触不进行激活注入离子的热处理，并且通过加热使金属与Si层部分反应而形成金属膜的金属的硅化物。 期望同时进行形成硅化物的步骤和在形成金属膜之后通过热处理激活注入的离子的步骤。

公开(公告)号：EP2088629A1

公开(公告)日：2009-08-12

申请号：EP07807788.0

申请日：2007-09-21

申请人： National University Corporation Tohoku Unversity ,  Zeon Corporation

发明人： OHMI, Tadahiro ,  SUGITANI, Koichi

IPC分类号： H01L29/786 ,  H01L21/28 ,  H01L21/283 ,  H01L21/336

CPC分类号： H01L29/78603 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78636

摘要： In a semiconductor device according to the present invention, an insulator layer on a substrate is provided with a trench. A gate electrode is formed in the trench so that an upper surface of the gate electrode is approximately flush with an upper surface of the insulator layer. On the gate electrode, a semiconductor layer is provided via a gate insulating film. At least one of a source electrode and a drain electrode is electrically connected to the semiconductor layer. Particularly, the gate insulating film includes an insulator coating film provided on the gate electrode, and an insulator CVD film formed on the insulator coating film.

摘要翻译： 在根据本发明的半导体器件中，衬底上的绝缘层设置有沟槽。 在沟槽中形成栅电极，使得栅电极的上表面与绝缘层的上表面大致齐平。 在栅电极上，经由栅极绝缘膜提供半导体层。 源电极和漏电极中的至少一个电连接到半导体层。 特别地，栅极绝缘膜包括设置在栅极上的绝缘体涂层膜和形成在绝缘体涂层膜上的绝缘体CVD膜。

公开(公告)号：EP2043159A1

公开(公告)日：2009-04-01

申请号：EP07790721.0

申请日：2007-07-12

申请人： National University Corporation Tohoku Unversity ,  Foundation for Advancement of International Science

发明人： OHMI, Tadahiro ,  TERAMOTO, Akinobu ,  KURODA, Rihito

IPC分类号： H01L29/786 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L29/417

CPC分类号： H01L27/1203 ,  H01L21/28202 ,  H01L29/518 ,  H01L29/78654 ,  H01L29/78696

摘要： An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×10 17 cm -3 to achieve a large gate voltage swing.

摘要翻译： 累积模式晶体管的沟道区中的半导体层的杂质浓度高于2×10 17 cm -3，以实现大的栅极电压摆动。

公开(公告)号：EP2040302A1

公开(公告)日：2009-03-25

申请号：EP07767367.1

申请日：2007-06-21

申请人： National University Corporation Tohoku Unversity ,  Foundation for Advancement of International Science

发明人： OHMI, Tadahiro ,  TERAMOTO, Akinobu ,  CHENG, Weitao

IPC分类号： H01L29/786

CPC分类号： H01L29/78654 ,  H01L29/78603 ,  H01L29/78648

摘要： A transistor capable of adjusting a threshold value is obtained by adjusting an impurity concentration of a silicon substrate supporting an SOI layer and by controlling a thickness of a buried insulating layer formed on a surface of the silicon substrate in contact with the SOI layer.

摘要翻译： 通过调整支撑SOI层的硅衬底的杂质浓度和通过控制形成在与SOI层接触的硅衬底表面上的掩埋绝缘层的厚度，可以获得能够调整阈值的晶体管。

公开(公告)号：EP2039655A1

公开(公告)日：2009-03-25

申请号：EP07744655.7

申请日：2007-06-04

申请人： National University Corporation Tohoku Unversity ,  Taiyo Nippon Sanso Corporation ,  Ube Material Industries, Ltd.

发明人： OHMI, Tadahiro ,  ISHIHARA, Yoshio ,  SUZUKI, Katsumasa ,  SAKODA, Kaoru ,  MISUMI, Osamu ,  WATANABE, Takayuki

IPC分类号： C01F11/02 ,  B01D53/28 ,  B01D53/86 ,  B01J20/04

CPC分类号： C01F11/02 ,  B01D53/685 ,  B01D2251/602 ,  B01D2251/604 ,  B01D2257/2027 ,  B01J20/041 ,  B01J20/28057 ,  B01J20/28069 ,  B01J20/28078 ,  B01J20/28092 ,  C01F11/04 ,  C01P2006/12 ,  C01P2006/14 ,  C01P2006/16 ,  Y10T428/2982

摘要： Granular calcium oxide and calcium hydroxide which are highly reactive with a halide gas and its decomposition products and favorably employable for filling a gas-fixing unit (32) of an apparatus (3) for fixing a halide gas are, respectively, a granule of porous spherical calcium oxide particles, which has a BET specific surface area of 50 m 2 /g or more and a total pore volume of pores having a diameter of 2-100 nm in the range of 0.40-0.70 mL/g and a granule of porous spherical calcium hydroxide particles which has a BET specific surface area of 20 m 2 /g or more and a total pore volume of pores having a diameter of 2-100 nm in the range of 0.25-0.40 mL/g.

摘要翻译： 与卤化物气体及其分解产物具有高反应性的颗粒状氧化钙和氢氧化钙分别适用于填充用于固定卤化物气体的装置（3）的气体固定单元（32），所述颗粒为多孔 具有50m 2 / g以上的BET比表面积和0.40-0.70mL / g范围内的直径为2-100nm的孔的总孔体积的球形氧化钙颗粒和多孔球形颗粒 具有20m 2 / g以上的BET比表面积和0.25〜0.40mL / g的范围内的直径2〜100nm的细孔的总孔体积的氢氧化钙粒子。

公开(公告)号：EP1918799A1

公开(公告)日：2008-05-07

申请号：EP06746185.5

申请日：2006-05-10

申请人： FUJIKIN INCORPORATED ,  National University Corporation Tohoku Unversity

发明人： OHMI, Tadahiro ,  NISHINO, Kouji ,  DOHI, Ryousuke ,  IKEDA, Nobukazu ,  NAGASE, Masaaki ,  HIRATA, Kaoru ,  SUGITA, Katsuyuki ,  SHINOHARA, Tsutomu ,  HIROSE, Takashi ,  IMAI, Tomokazu ,  YOSHIDA, Toshihide ,  TANAKA, Hisashi

IPC分类号： G05D7/06 ,  F16K27/00 ,  F16L55/00 ,  G01F1/42

CPC分类号： F16K27/003 ,  F16L55/02718 ,  G01F1/36 ,  G01F15/001 ,  G01F15/005 ,  G05D7/0635

摘要： The present invention makes it possible for a flow rate to be controlled to be switched easily by means of an orifice being changed conveniently without disassembling or assembling a pressure type flow rate control apparatus.
An orifice changeable pressure type flow rate control apparatus of the present invention is so constituted that a valve body (23) of a control valve (2) for a pressure type flow rate control apparatus (A) is installed between an inlet side fitting block (39) provided with a coupling part of a fluid supply pipe and an outlet side fitting block (43) provided with a coupling part of a fluid takeout pipe; a fluid inlet side of the valve body (23) and the afore-mentioned inlet side fitting block (39), and also a fluid outlet side of the afore-mentioned valve body (23) and the afore-mentioned outlet side fitting block (43) are detachably and hermitically connected, respectively, so that a flow passage for gases through the afore-mentioned control valve (2) is formed; and, a gasket type orifice (38) for a pressure type flow rate control apparatus (A) is removably inserted between a gasket type orifice insertion hole (42c) provided on the outlet side of the afore-mentioned valve body (23) and a gasket type orifice insertion hole (43b) of the outlet side fitting block (43b).

摘要翻译： 本发明通过在不拆卸或组装压力式流量控制装置的情况下方便地改变孔口，可以容易地控制流量的切换。 本发明的节流孔可变压力型流量控制装置的特征在于，在压力式流量控制装置（A）的控制阀（2）的阀体（23）之间， 39）设置有流体供给管的联接部和设置有流体取出管的联接部的出口侧配件块（43） 阀体（23）和前述入口侧配件块（39）的流体入口侧以及上述阀体（23）的流体出口侧和上述出口侧配件块（ 43）分别可拆卸地和隐蔽地连接，从而形成用于通过上述控制阀（2）的气体的流动通道; 并且用于压力式流量控制装置（A）的垫圈型孔口（38）可移除地插入设置在上述阀体（23）的出口侧的垫圈型孔插入孔（42c）和 出口侧装配块（43b）的垫圈型孔插入孔（43b）。

公开(公告)号：EP1876639A1

公开(公告)日：2008-01-09

申请号：EP06731864.2

申请日：2006-04-14

申请人： Tokyo Electron Limited (TEL) ,  National University Corporation Tohoku Unversity

发明人： OKESAKU, Masahiro ,  OHMI, Tadahiro

IPC分类号： H01L21/205 ,  C23C16/455 ,  H01L21/3065 ,  B24B37/00 ,  B24B1/04

CPC分类号： B24B5/485 ,  B24B1/04 ,  C04B35/111 ,  C04B35/6455 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/77 ,  C04B2235/945 ,  C23C16/45565 ,  Y10T29/49996

摘要： Disclosed is a shower plate which is formed with a large number of process-gas blowing holes having a simple structure, high machinability and high dimensional accuracy without the risk of unevenness in blowing of a process gas and outbreak of particles, while ensuring constant quality and interchangeability. Through a press forming process, a powder for a ceramic material with a low dielectric constant is formed into a disc-shaped compact having dimensions determined in consideration of a sintering shrinkage value and a machining value. A gas inlet passage 3 and a large number of blowing holes 2 for a compact stage are bored in the disc-shaped compact, and then the disc-shaped compact is sintered. Subsequently, the gas inlet passage 3 and a main hole portion 2b in each of the blowing holes are subjected to grinding to have a surface roughness of 1 s or less. Further, a lapping wire having a taper-shaped end is inserted into an outlet port 2a of the blowing hole 2, and reciprocatingly moved while being slidingly displaced in such a manner that a portion of the lapping wire located in the outlet port 2a is gradually increased in wire diameter, so that the outlet port 2a is lapped to have a diameter of from 0.1 mm to less than 0.3 mm, a dimensional accuracy within ± 0.002 mm, and a surface roughness of 1 s or less.

摘要翻译： 公开了一种喷淋板，其形成有具有简单结构，高机械加工性和高尺寸精度的大量处理气体吹扫孔，而不会产生处理气体的吹送不均匀和颗粒物爆发的风险，同时确保恒定的质量和 互换性。 通过冲压成形工艺，将具有低介电常数的陶瓷材料粉末形成为具有考虑到烧结收缩值和加工值确定的尺寸的圆盘形压块。 在圆盘状压块中钻入气体入口通道3和大量用于紧凑级的吹气孔2，然后烧结圆盘形压块。 随后，对每个吹气孔中的气体入口通道3和主孔部分2b进行研磨以使表面粗糙度为1秒以下。 此外，具有锥形端的研磨线被插入到吹风孔2的出口2a中，并且以滑动位移的方式往复运动，使得位于出口2a中的研磨线的一部分逐渐地 线径增加，使得出口2a被研磨成具有0.1mm至小于0.3mm的直径，±0.002mm的尺寸精度和1s或更小的表面粗糙度。