公开(公告)号：EP2088629A1

公开(公告)日：2009-08-12

申请号：EP07807788.0

申请日：2007-09-21

申请人： National University Corporation Tohoku Unversity ,  Zeon Corporation

发明人： OHMI, Tadahiro ,  SUGITANI, Koichi

IPC分类号： H01L29/786 ,  H01L21/28 ,  H01L21/283 ,  H01L21/336

CPC分类号： H01L29/78603 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78636

摘要： In a semiconductor device according to the present invention, an insulator layer on a substrate is provided with a trench. A gate electrode is formed in the trench so that an upper surface of the gate electrode is approximately flush with an upper surface of the insulator layer. On the gate electrode, a semiconductor layer is provided via a gate insulating film. At least one of a source electrode and a drain electrode is electrically connected to the semiconductor layer. Particularly, the gate insulating film includes an insulator coating film provided on the gate electrode, and an insulator CVD film formed on the insulator coating film.

摘要翻译： 在根据本发明的半导体器件中，衬底上的绝缘层设置有沟槽。 在沟槽中形成栅电极，使得栅电极的上表面与绝缘层的上表面大致齐平。 在栅电极上，经由栅极绝缘膜提供半导体层。 源电极和漏电极中的至少一个电连接到半导体层。 特别地，栅极绝缘膜包括设置在栅极上的绝缘体涂层膜和形成在绝缘体涂层膜上的绝缘体CVD膜。

公开(公告)号：EP2096678A1

公开(公告)日：2009-09-02

申请号：EP07850921.3

申请日：2007-12-19

申请人： National University Corporation Tohoku Unversity ,  Zeon Corporation ,  Ube Nitto Kasei Co., Ltd. ,  Ube Industries, Ltd.

发明人： OHMI, Tadahiro ,  SUGITANI, Koichi ,  KOIKE, Tadashi ,  BAMBA, Akinori ,  KOBAYASHI, Akihiro ,  WATANUKI, Kohei

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/4908 ,  H01L27/1292 ,  H01L29/78639

摘要： A thin-film transistor (TFT) has a gate insulating film excellent in transparency and flatness. The gate insulating film is formed by a transparent insulating film (131) which is composed of an oxide represented by R x MO y and which is arranged between a gate electrode and a semiconductor layer. The transparent insulating film (131) is made of a coating agent which is composed of one mixed liquid obtained by dissolving or dispersing a condensate, which is obtained by subjecting a compound represented by R x MX m-x (where R represents a non-hydrolyzable substituent, M represents Si, Ti, Al, Zr, Zn, Sn or In, X represents a hydrolyzable substituent, x represents an integer of 0-3, and m represents the valence of M) to a hydrolysis-condensation reaction, in an organic solvent, water or their mixed solvent, or alternatively a coating agent which is obtained by mixing two or more of such mixed liquids.

摘要翻译： 薄膜晶体管（TFT）具有透明性和平坦性优异的栅极绝缘膜。 栅极绝缘膜由透明绝缘膜（131）形成，该绝缘膜由由R x MO y表示的氧化物组成，并且布置在栅电极和半导体层之间。 透明绝缘膜（131）由涂布剂构成，该涂布剂由将由R x MX mx表示的化合物（其中R表示不可水解取代基）得到的通过溶解或分散缩合物得到的一种混合液 在有机物中，M表示Si，Ti，Al，Zr，Zn，Sn或In，X表示可水解取代基，x表示0-3的整数，m表示M表示水解缩合反应的化合价） 溶剂，水或其混合溶剂，或者通过混合两种或更多种这样的混合液而获得的涂层剂。