公开(公告)号：EP3403281A1

公开(公告)日：2018-11-21

申请号：EP16871752.8

申请日：2016-12-29

申请人： BOE Technology Group Co., Ltd. ,  South China University of Technology

发明人： YAN, Liangchen ,  YUAN, Guangcai ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC分类号： H01L29/24 ,  H01L29/786

CPC分类号： H01L29/78603 ,  H01L21/34 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

摘要： The present disclosure provides an active layer, a thin film transistor, an array substrate, and a display apparatus, and fabrication methods thereof. A method for fabricating an active layer in a thin film transistor is provided by forming a thin film by a direct current (DC) sputtering process; and etching the thin film to form the active layer. The thin film is made of a material selected to provide the active layer with a carrier concentration of at least approximately 1×1017 cm−3 and a carrier mobility of at least approximately 20 cm2/Vs.

公开(公告)号：EP2822026B1

公开(公告)日：2018-03-14

申请号：EP13754726.1

申请日：2013-02-28

申请人： Kyocera Corporation

发明人： KITADA, Masanobu

IPC分类号： H01L21/20 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1203 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/2007 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78654

摘要： Provided is a composite substrate having a semiconductor layer wherein diffusion of a metal is suppressed. This composite substrate has: a single crystal supporting substrate composed of an insulating oxide; a semiconductor layer, which has one main surface overlapping the supporting substrate, and which is composed of a single crystal; and a polycrystalline or amorphous intermediate layer, which is positioned between the supporting substrate and the semiconductor layer, and which has, as a main component, an element constituting the supporting substrate or an element constituting the semiconductor layer, and in which the ratio of accessory components other than the main component is less than 1 mass %.

公开(公告)号：EP3257073A1

公开(公告)日：2017-12-20

申请号：EP15851611.2

申请日：2015-09-18

申请人： BOE Technology Group Co., Ltd.

发明人： CHEN, Liqiang ,  SUN, Tao ,  CAI, Baoming

IPC分类号： H01L21/77

CPC分类号： H01L51/5253 ,  H01L21/6835 ,  H01L21/77 ,  H01L23/544 ,  H01L25/167 ,  H01L25/50 ,  H01L27/3276 ,  H01L29/78603 ,  H01L51/524 ,  H01L51/56 ,  H01L2221/6835 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2227/326 ,  H01L2251/5338

摘要： The present disclosure provides a method for bonding an integrated circuit (IC) chip onto a flexible display body. The method includes providing a substrate having a flexible display body thereon, and aligning a first stiffening component with the flexible display body having an IC bonding region. The method further includes attaching the first stiffening component onto a front surface of the flexible display body, and separating the substrate from the first stiffening component and the flexible display body to expose a back surface of the flexible display body; and bonding an IC chip onto the IC bonding region.

公开(公告)号：EP2355141A3

公开(公告)日：2017-09-20

申请号：EP11153475.6

申请日：2011-02-07

申请人： Fujifilm Corporation

发明人： Sato, Keigo ,  Yuuya, Shigenori

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/324

CPC分类号： H01L21/02381 ,  H01L21/324 ,  H01L27/1218 ,  H01L27/1262 ,  H01L29/78603

摘要： [Objectives]
First, a semiconductor device having favorable properties will be produced. Second, the occurrence of cracks in a porous layer formed on the substrate of a semiconductor device will be suppressed, to realize a high performance semiconductor device, even if it has a large area. Third, the adhesion properties of a porous layer formed on a resin substrate will be improved, to suppress separation of the resin substrate and the porous layer.
[Constitution]
A semiconductor device is provided with a porous structure layer (4) formed by silicone resin between a substrate (2) and a semiconductor element (3). Alternatively, a porous layer (24) having a density of 0.7g/cm 3 or less, formed by a compound obtained by hydrolyzing and condensing at least one type of alkoxysilane selected from a group consisting of monoalkoxysilane, dialkoxysilane, and trialkoxysilane, and tetraalkoxysilane is provided between a substrate (22) and a semiconductor element (23) of a semiconductor device (21). As a further alternative, an adhesion layer (33) formed by a compound obtained by hydrolyzing and condensing an alkoxysilane is provided on a resin substrate (32), and a porous layer (34) having a density of 0.7g/cm 3 or less, formed by a compound obtained by hydrolyzing and condensing an alkoxysilane, is provided on the adhesion layer (33).

摘要翻译： [目的]首先，制造具有良好特性的半导体装置。 其次，抑制在半导体器件的衬底上形成的多孔层中裂纹的发生，以实现高性能半导体器件，即使其具有大面积。 第三，提高形成在树脂基材上的多孔层的粘合性，抑制树脂基材和多孔层的剥离。 [构成]半导体器件在衬底（2）和半导体元件（3）之间设置有由有机硅树脂形成的多孔结构层（4）。 或者，由选自由单烷氧基硅烷，二烷氧基硅烷和三烷氧基硅烷和四烷氧基硅烷组成的组中的至少一种类型的烷氧基硅烷水解并缩合而得到的化合物形成的密度为0.7g / cm 3或更低的多孔层（24） 提供在半导体器件（21）的衬底（22）和半导体元件（23）之间。 作为另一种选择，在树脂基板（32）上设置由将烷氧基硅烷水解并缩合而得到的化合物形成的粘合层（33）和密度为0.7g / cm 3以下的多孔质层（34） （33）上设置由烷氧基硅烷水解缩合而成的化合物形成的层叠体。

公开(公告)号：EP3070746A4

公开(公告)日：2017-09-06

申请号：EP15866397

申请日：2015-11-10

申请人： BOE TECHNOLOGY GROUP CO LTD

发明人： SHI LEI ,  XU XIAOWEI

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L21/027 ,  H01L21/266 ,  H01L21/28 ,  H01L21/426 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L29/78648 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02675 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/28 ,  H01L21/426 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1274 ,  H01L29/6675 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78645 ,  H01L29/78672 ,  H01L29/7869

公开(公告)号：EP2576860B1

公开(公告)日：2017-08-09

申请号：EP11790412.8

申请日：2011-06-02

申请人： NCC Nano, LLC

发明人： SCHRODER, Kurt, A. ,  WENZ, Robert, P.

IPC分类号： C23C16/56 ,  H01L21/20 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66 ,  B29C35/02 ,  B29C35/08

CPC分类号： H01L21/428 ,  B29C35/0266 ,  B29C35/0272 ,  B29C35/0805 ,  B29C2035/0855 ,  B29C2035/0877 ,  H01L21/02422 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02686 ,  H01L21/02689 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/78603

公开(公告)号：EP3097594A4

公开(公告)日：2017-06-07

申请号：EP14879712

申请日：2014-09-23

申请人： APPLE INC

发明人： CHOI JAE WON ,  GUILLOU JEAN-PIERRE ,  CHANG SHIH CHANG ,  TSAI TSUNG-TING ,  GUPTA VASUDHA ,  PARK YOUNG BAE

IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L29/786

CPC分类号： H01L27/3272 ,  H01L27/3262 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78666 ,  H01L29/78675 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of a drive transistor. Each display pixel may also have control transistors for compensating and programming operations. The array of display pixels may have rows and columns. Row lines may be used to apply row control signals to rows of the display pixels. Column lines (data lines) may be used to apply display data and other signals to respective columns of display pixels. A bottom conductive shielding structure may be formed below each drive transistor. The bottom conductive shielding structure may serve to shield the drive transistor from any electric field generated from the adjacent row and column lines. The bottom conductive shielding structure may be electrically floating or coupled to a power supply line.

摘要翻译： 显示器可以具有一组有机发光二极管显示像素。 每个显示像素可以具有在驱动晶体管的控制下发光的发光二极管。 每个显示像素还可以具有用于补偿和编程操作的控制晶体管。 显示像素的阵列可以具有行和列。 行线可用于将行控制信号施加到显示像素的行。 列线（数据线）可以用于将显示数据和其他信号应用于各列显示像素。 底部导电屏蔽结构可以形成在每个驱动晶体管的下方。 底部导电屏蔽结构可用于屏蔽驱动晶体管免受由相邻行和列线产生的任何电场的影响。 底部导电屏蔽结构可以是电浮动的或耦合到电源线。

公开(公告)号：EP2376434B1

公开(公告)日：2017-05-24

申请号：EP09799248.1

申请日：2009-12-10

申请人： Merck Patent GmbH

发明人： KUEGLER, Ralf ,  KLYSZCZ, Andreas ,  RENKER, Sabine ,  SCHNEIDER, Joerg J. ,  HOFFMANN, Rudolf

IPC分类号： C07C251/70 ,  C23C18/12 ,  H01L21/335 ,  H05K3/12 ,  H05K3/14

CPC分类号： H01L29/786 ,  C07C249/08 ,  C07F7/2204 ,  C23C18/1216 ,  C23C18/1279 ,  C23C18/1295 ,  C23C18/14 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02288 ,  H01L21/02348 ,  H01L21/28008 ,  H01L21/316 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1292 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/7869 ,  H01L2924/0002 ,  C07C251/70 ,  H01L2924/00

公开(公告)号：EP3163617A1

公开(公告)日：2017-05-03

申请号：EP14892228.9

申请日：2014-09-25

申请人： BOE Technology Group Co., Ltd.

发明人： LI, Yunfei ,  SHI, Ling

IPC分类号： H01L27/02 ,  H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  H01L29/06 ,  G02F1/1368

CPC分类号： H01L27/1218 ,  G02F1/136213 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/78603 ,  H01L51/0097 ,  H01L2251/5338

摘要： The present invention provides a flexible substrate, a flexible display panel and a flexible display device. The flexible substrate includes an on-off element and an insulating layer, wherein a part of the insulating layer serves as a part of the on-off element, and the part of the insulating layer serving as a part of the on-off element is separated from rest part of the insulating layer. In the flexible substrate, the part of the insulating layer serving as a part of the on-off element is separated from the rest part of the insulating layer, such that cracks generated in the reset part of the insulating layer are unlikely to extend to the region where the on-off element is located, namely the cracks are unlikely to extend from the rest part of the insulating layer to the part of the insulating layer serving as a part of the on-off element, and thus the poor contact or abnormal on-off phenomenon of the on-off element can be avoided, so as to not only guarantee the reliability of the on-off element, but also prolong the service life of the on-off element and ensure the normal work of the flexible substrate.

摘要翻译： 本发明提供了柔性基板，柔性显示面板和柔性显示装置。 柔性基板包括开关元件和绝缘层，其中绝缘层的一部分用作开 - 关元件的一部分，并且用作开 - 关元件的一部分的绝缘层的部分是 与绝缘层的静止部分分离。 在柔性基板中，作为开关元件的一部分的绝缘层的部分与绝缘层的其余部分分离，使得在绝缘层的复位部分中产生的裂纹不太可能延伸到 开关元件所在的区域即裂纹不可能从绝缘层的其余部分延伸到作为开 - 关元件的一部分的绝缘层的部分，因此接触不良或异常 可以避免开关元件的开 - 关现象，不仅可以保证开关元件的可靠性，而且可以延长开关元件的使用寿命，确保柔性基板的正常工作 。

公开(公告)号：EP3120385A1

公开(公告)日：2017-01-25

申请号：EP14886535.5

申请日：2014-03-18

申请人： Intel Corporation

发明人： MUKHERJEE, Niloy ,  DOYLE, Brian S. ,  DASGUPTA, Sansaptak ,  RADOSAVLJEVIC, Marko ,  PILLARISETTY, Ravi ,  THEN, Han Wui ,  RAO, Valluri R. ,  CHAU, Robert S.

IPC分类号： H01L29/04 ,  H01L21/763

CPC分类号： H01L21/02513 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02282 ,  H01L21/02422 ,  H01L21/02428 ,  H01L21/02488 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02675 ,  H01L21/763 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78681

摘要： Embodiments of semiconductor assemblies, and related integrated circuit devices and techniques, are disclosed herein. In some embodiments, a semiconductor assembly may include a flexible substrate, a polycrystalline semiconductor material, and a polycrystalline dielectric disposed between and adjacent to the flexible substrate and the polycrystalline semiconductor material. The polycrystalline semiconductor material may include a polycrystalline III-V material, a polycrystalline II-VI material or polycrystalline germanium. Other embodiments may be disclosed and/or claimed.

摘要翻译： 本文公开了半导体组件的实施例以及相关的集成电路器件和技术。 在一些实施例中，半导体组件可以包括柔性衬底，多晶半导体材料以及设置在柔性衬底和多晶半导体材料之间和之间的多晶电介质。 多晶半导体材料。 多晶半导体材料可以包括多晶III-V材料，多晶II-VI材料或多晶锗。 可以公开和/或要求保护其他实施例。