公开(公告)号：EP4071256A1

公开(公告)日：2022-10-12

申请号：EP20896310.8

申请日：2020-11-20

申请人： Nippon Micrometal Corporation ,  NIPPON STEEL Chemical & Material Co., Ltd.

发明人： OISHI, Ryo ,  ODA, Daizo ,  ARAKI, Noritoshi ,  SHIMOMURA, Kota ,  UNO, Tomohiro ,  OYAMADA, Tetsuya

IPC分类号： C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C9/06 ,  C22C9/10 ,  C22F1/00 ,  C22F1/08 ,  H01L21/60

摘要： There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (µm/µm 2 ) or more and 1.6 (µm/µm 2 ) or less.

公开(公告)号：EP4109499A1

公开(公告)日：2022-12-28

申请号：EP21757478.9

申请日：2021-02-19

申请人： Nippon Micrometal Corporation ,  NIPPON STEEL Chemical & Material Co., Ltd.

发明人： UNO, Tomohiro ,  OYAMADA, Tetsuya ,  ODA, Daizo ,  SHIMOMURA, Kota ,  YAMAGUCHI, Tadashi

IPC分类号： H01L21/60

摘要： There is provided a copper bonding wire that exhibits a favorable bondability even when a scrub at the time of bonding is reduced. The copper bonding wire is characterized in that when a sum of percentages of Cu, Cu 2 O, CuO and Cu(OH) 2 on a surface of the wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, Cu[II]/Cu[I] which is a ratio of a total percentage of CuO and Cu(OH) 2 (Cu[II]) corresponding to bivalent Cu to a percentage of Cu 2 O (Cu[I]) corresponding to monovalent Cu falls within a range from 0.8 to 12.