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1.发明公开APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL 有权设备用于生产单晶硅和方法生产的单晶硅
公开(公告)号：EP2660368A1
公开(公告)日：2013-11-06
申请号：EP11854203.4
申请日：2011-12-26
发明人： OKADA, Nobuhiro , KAMEI, Kazuhito , KUSUNOKI, Kazuhiko , YASHIRO, Nobuyoshi , MORIGUCHI, Kouji , DAIKOKU, Hironori , SUZUKI, Hiroshi , ISHII, Tomokazu , SAKAMOTO, Hidemitsu , KADO, Motohisa , KAWAI, Yoichiro
CPC分类号： C30B15/20 , C30B15/14 , C30B15/30 , C30B15/305 , C30B17/00 , C30B29/36 , Y10T117/1068
摘要： A manufacturing apparatus of a SiC single crystal which facilitates feeding of carbon to the vicinity of a SiC seed crystal. A control unit controls a induction heating unit such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1), where D1 (mm) indicates a permeation depth of electromagnetic waves into a side wall of a crucible by the induction heating unit, D2 (mm) indicates a permeation depth of electromagnetic waves into a SiC solution, T (mm) indicates a thickness of the side wall of the crucible, and R (mm) indicates an inner radius of the crucible: D 1 - T × D 2 / R > 1
where, D1 is defined by Formula (2), and D2 by Formula (3): D 1 = 503292 × 1 / f × σc × μc 1 / 2 D 2 = 503292 × 1 / f × σs × μs 1 / 2
where, σc is an electric conductivity (S/m) of the sidewall, and σs is an electric conductivity (S/m) of the SiC solution; µc is a relative permeability (dimensionless quantity) of the sidewall, and µs is a relative permeability (dimensionless quantity) of the SiC solution.-
2.发明公开METHOD FOR PRODUCING n-TYPE SiC MONOCRYSTAL 有权VERFAHREN ZUR HERSTELLUNG N-DOTIERTER SIC-MONOKRISTALLELE
公开(公告)号：EP2639344A1
公开(公告)日：2013-09-18
申请号：EP11840494.6
申请日：2011-11-04
发明人： KUSUNOKI, Kazuhiko , KAMEI, Kazuhito , YASHIRO, Nobuyoshi , MORIGUCHI, Kouji , OKADA, Nobuhiro , DANNO, Katsunori , DAIKOKU, Hironori
摘要： Provided is a method for manufacturing an n-type SiC single crystal, the method being able to suppress the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method for manufacturing an n-type SiC single crystal in the present embodiment includes the steps of: providing a manufacturing apparatus (100) including a chamber (1) having an area in which a crucible (7) is to be disposed; heating the area in which the crucible (7) is to be disposed and evacuating the gas in the chamber (1); filling, after the evacuation, the chamber (1) with a mixed gas containing a noble gas and nitrogen gas; heating and melting a starting material housed in the crucible (7) disposed in the area to produce a SiC solution (8) containing silicon and carbon; and immersing a SiC seed crystal into the SiC solution under the mixed gas atmosphere to grow an n-type SiC single crystal on the SiC seed crystal.
摘要翻译： 提供一种制造n型SiC单晶的方法，该方法能够抑制制造的多个n型SiC单晶锭中的氮浓度的变化。 本实施方式的n型SiC单晶的制造方法包括以下工序：提供具有室（1）的制造装置（100），所述室具有要设置坩埚（7）的区域; 加热要安置坩埚（7）的区域并抽空腔室（1）中的气体; 在用惰性气体和氮气的混合气体填充室（1）后， 加热和熔化容纳在设置在该区域中的坩埚（7）中的原料以产生含有硅和碳的SiC溶液（8）; 并在混合气体气氛下将SiC晶种浸入SiC溶液中，以在SiC晶种上生长n型SiC单晶。
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公开(公告)号：EP2639344B1
公开(公告)日：2016-04-20
申请号：EP11840494.6
申请日：2011-11-04
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4.发明授权APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL 有权生产SiC单晶的装置和生产SiC单晶的方法
公开(公告)号：EP2660368B1
公开(公告)日：2018-04-25
申请号：EP11854203.4
申请日：2011-12-26
发明人： OKADA, Nobuhiro , KAMEI, Kazuhito , KUSUNOKI, Kazuhiko , YASHIRO, Nobuyoshi , MORIGUCHI, Kouji , DAIKOKU, Hironori , SUZUKI, Hiroshi , ISHII, Tomokazu , SAKAMOTO, Hidemitsu , KADO, Motohisa , KAWAI, Yoichiro
CPC分类号： C30B15/20 , C30B15/14 , C30B15/30 , C30B15/305 , C30B17/00 , C30B29/36 , Y10T117/1068
摘要： A manufacturing apparatus of a SiC single crystal which facilitates feeding of carbon to the vicinity of a SiC seed crystal. A control unit controls a induction heating unit such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1), where D1 (mm) indicates a permeation depth of electromagnetic waves into a side wall of a crucible by the induction heating unit, D2 (mm) indicates a permeation depth of electromagnetic waves into a SiC solution, T (mm) indicates a thickness of the side wall of the crucible, and R (mm) indicates an inner radius of the crucible: D �¢ 1 - T × D �¢ 2 / R > 1 where, D1 is defined by Formula (2), and D2 by Formula (3): D �¢ 1 = 503292 × 1 / f × Ãc × ¼c 1 / 2 D �¢ 2 = 503292 × 1 / f × Ãs × ¼s 1 / 2 where, Ãc is an electric conductivity (S/m) of the sidewall, and Ãs is an electric conductivity (S/m) of the SiC solution; µc is a relative permeability (dimensionless quantity) of the sidewall, and µs is a relative permeability (dimensionless quantity) of the SiC solution.
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