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公开(公告)号：EP2775015B1
公开(公告)日：2017-06-21
申请号：EP11875192.4
申请日：2011-12-09
摘要： Provided is a SiC single crystal manufacturing method whereby growing speed improvement required to have high productivity can be achieved, while maintaining flat growth in which uniform single crystal growth can be continued at the time of growing a SiC single crystal using a solution method. In this SiC single crystal manufacturing method, a SiC single crystal is grown in a crucible from a Si solution containing C. The SiC single crystal manufacturing method is characterized in alternately repeating: a high supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree of C in the Si solution higher than an upper limit critical value at which flat growth can be maintained, said supersaturation degree being at a growing interface between the Si solution and a SiC single crystal being grown; and a low supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree lower than the critical value.
摘要翻译： 本发明提供一种SiC单晶的制造方法，在使用溶液法生长SiC单晶时，能够维持生长速度提高，并且生长速度提高，并且能够维持能够使单晶生长持续均匀的平坦的生长。 在该SiC单晶制造方法中，由含有C的Si溶液在坩埚中生长SiC单晶。该SiC单晶制造方法的特征在于交替重复：高过饱和度生长期，其中促进生长 保持Si溶液中C的过饱和度高于可保持平坦生长的上限临界值，所述过饱和度在Si溶液和生长的SiC单晶之间的生长界面处; 和过饱和度低的生长期，通过保持过饱和度低于临界值来促进生长。
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2.发明公开SiC MONOCRYSTAL AND METHOD FOR PRODUCING SAME 审中-公开SIC-EINKRISTALL UND VERFAHREN ZUR HERSTELLUNG DAVON
公开(公告)号：EP3051009A1
公开(公告)日：2016-08-03
申请号：EP14847080.0
申请日：2014-08-27
CPC分类号： C30B19/10 , C30B9/10 , C30B19/02 , C30B19/062 , C30B19/068 , C30B19/08 , C30B19/12 , C30B29/36 , H01L21/02529 , H01L21/02598 , H01L21/02609 , H01L21/02628 , H01L29/045 , H01L29/1608
摘要： Provided is a SiC single crystal that has a large growth thickness and contains no inclusions. A SiC single crystal grown by a solution process, wherein the total length M of the outer peripheral section formed by the {1-100} faces on the {0001} growth surface of the SiC single crystal, and the length P of the outer periphery of the growth surface of the SiC single crystal, satisfy the relationship M/P ≤ 0.70, and the length in the growth direction of the SiC single crystal is 2 mm or greater.
摘要翻译： 提供具有大生长厚度且不含夹杂物的SiC单晶。 通过溶液法生长的SiC单晶，其中由{1-100}形成的外周部分的总长度M面在SiC单晶的{0001}生长表面上，外周的长度P 的SiC单晶的生长面，满足M / P‰0.70的关系，SiC单晶生长方向的长度为2mm以上。
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3.发明公开APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL 审中-公开设备用于生产单晶硅和方法生产的单晶硅
公开(公告)号：EP2876189A1
公开(公告)日：2015-05-27
申请号：EP13819242.2
申请日：2013-07-10
发明人： OKADA, Nobuhiro , KAMEI, Kazuhito , KUSUNOKI, Kazuhiko , YASHIRO, Nobuyoshi , MORIGUCHI, Koji , DAIKOKU, Hironori , KADO, Motohisa , SAKAMOTO, Hidemitsu
CPC分类号： C30B15/32 , C30B9/06 , C30B15/30 , C30B19/068 , C30B29/36 , Y10T117/1024 , Y10T117/1032
摘要： An apparatus (10) for producing an SiC single crystal is used in the solution growth method. The apparatus (10) for producing an SiC single crystal includes a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is to be attached. The crucible (14) holds an Si-C solution (15). The seed shaft (28) includes a cylinder part (28A), a bottom part (28B), and a low heat conductive member (28C). The bottom part (28B) is located at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low heat conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than that of the bottom part (28B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.
摘要翻译： 在SiC单晶制造装置（10）在溶液中的生长方法被使用。 在SiC单晶的制造坩埚装置（10）包括一个籽晶轴（28）和（14）。 籽晶轴（28）的下端表面（28S），以SiC晶种的哪个（32）被附接。 坩埚（14）保持在的Si-C溶液（15）。 籽晶轴（28）包括气缸部分（28A），一个底部（28B），和一个低导热构件（28C）。 所述底部部分（28B）位于所述筒部（28A）的下端，并具有下端表面（28S）。 该低导热构件（28C）设置在所述底部部分（28B）的上表面，并具有热传导率比所述底部部分（28B）的下端。 该制造装置可以使SiC晶种不易于变化的晶体生长表面内的温度。
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公开(公告)号：EP2775015A1
公开(公告)日：2014-09-10
申请号：EP11875192.4
申请日：2011-12-09
摘要： Provided is a SiC single crystal manufacturing method whereby growing speed improvement required to have high productivity can be achieved, while maintaining flat growth in which uniform single crystal growth can be continued at the time of growing a SiC single crystal using a solution method. In this SiC single crystal manufacturing method, a SiC single crystal is grown in a crucible from a Si solution containing C. The SiC single crystal manufacturing method is characterized in alternately repeating: a high supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree of C in the Si solution higher than an upper limit critical value at which flat growth can be maintained, said supersaturation degree being at a growing interface between the Si solution and a SiC single crystal being grown; and a low supersaturation degree growing period, in which the growth is promoted by maintaining the supersaturation degree lower than the critical value.
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公开(公告)号：EP2722421A1
公开(公告)日：2014-04-23
申请号：EP12800211.0
申请日：2012-06-15
发明人： KUSUNOKI, Kazuhiko , KAMEI, Kazuhito , YASHIRO, Nobuyoshi , OKADA, Nobuhiro , DAIKOKU, Hironori , KADO, Motohisa , SAKAMOTO, Hidemitsu
CPC分类号： C30B35/00 , C30B9/10 , C30B11/003 , C30B15/32 , C30B17/00 , C30B19/068 , C30B19/08 , C30B29/36 , Y10T117/1068 , Y10T117/1092
摘要： The purpose of the present invention is to provide an apparatus for producing an SiC single crystal, which can efficiently cool a seed crystal attached to a seed shaft. This apparatus for producing an SiC single crystal includes: a crucible (14) for accommodating an Si-C solution (16); and a seed shaft (30) having a lower end surface (34) to which an SiC seed crystal (36) is to be attached. The seed shaft includes: an inner pipe (48) that extends in a height direction of the crucible and constitutes a first passage (60) thereinside; an outer pipe (50) that accommodates the inner pipe and constitutes a second passage (SP1) between itself and the inner pipe; and a bottom portion that has the lower end surface and covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage through which a coolant gas flows downward, and the other passage serves as a discharge passage through which the coolant gas flows upward. When viewed from an axial direction of the seed shaft, a region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.
摘要翻译： 本发明的目的在于提供一种能够有效地冷却附着在种子轴上的晶种的SiC单晶的制造装置。 该用于制造SiC单晶的装置包括：用于容纳Si-C溶液（16）的坩埚（14）; 以及具有将SiC晶种（36）附着到其上的下端表面（34）的种子轴（30）。 种子轴包括：沿着坩埚的高度方向延伸并在内部构成第一通路（60）的内管（48） 外管（50），所述外管容纳所述内管并且构成其自身与所述内管之间的第二通路（SP1）; 以及底部，其具有下端表面并覆盖外管的下端开口。 第一和第二通道中的一个通道用作冷却剂气体向下流动的引入通道，并且另一个通道用作冷却剂气体向上流动的排出通道。 从种子轴的轴向观察时，构成导入通路的管内部的区域与SiC晶种的60％以上的区域重叠。
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6.发明公开METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL 审中-公开VERFAHREN ZUR HERSTELLUNG EINES SILICIUMEINKRISTALLS
公开(公告)号：EP2985369A1
公开(公告)日：2016-02-17
申请号：EP14782347.0
申请日：2014-04-09
发明人： KUSUNOKI, Kazuhiko , KAMEI, Kazuhito , DAIKOKU, Hironori , SAKAMOTO, Hidemitsu , KADO, Motohisa
IPC分类号： C30B29/36 , C30B19/10 , H01L21/208
摘要： The present invention provides a method for producing a SiC single crystal, which allows improving the quality of the single crystal even when crystal growth is performed by forming a meniscus. A growth step in the production method according to the present embodiment comprises a forming step and a first maintenance step. In the forming step, a meniscus is formed between a growth interface of a SiC single crystal and a liquid surface of a Si-C solution. In the first maintenance step, the fluctuation range of the height of the meniscus is maintained within a predetermined range by moving at least one of a seed shaft and a crucible relative to the other in the height direction.
摘要翻译： 本发明提供一种SiC单晶的制造方法，即使通过形成弯液面进行晶体生长，也能够提高单晶的品质。 根据本实施例的制造方法中的生长步骤包括形成步骤和第一维护步骤。 在成形步骤中，在SiC单晶的生长界面和Si-C溶液的液面之间形成弯液面。 在第一维护步骤中，通过在高度方向上相对于另一个移动种子轴和坩埚中的至少一个，将弯液面的高度的波动范围保持在预定范围内。
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7.发明授权method, apparatus and crucible for producing SiC single crystal by solution growth 有权一种方法，装置和坩埚由Lösungszüchtungsversfahren制造的SiC-Einkristal
公开(公告)号：EP2722422B1
公开(公告)日：2015-08-12
申请号：EP12802264.7
申请日：2012-06-11
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8.发明公开APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, METHOD FOR PRODUCING SIC SINGLE CRYSTAL USING APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, AND CRUCIBLE USED IN APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD 有权一种方法，装置和坩埚由Lösungszüchtungsversfahren制造的SiC-Einkristal
公开(公告)号：EP2722422A1
公开(公告)日：2014-04-23
申请号：EP12802264.7
申请日：2012-06-11
发明人： KAMEI, Kazuhito , KUSUNOKI, Kazuhiko , YASHIRO, Nobuyoshi , OKADA, Nobuhiro , DAIKOKU, Hironori , KADO, Motohisa , SAKAMOTO, Hidemitsu
摘要： A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. A production apparatus includes a seed shaft (30) and a crucible (14). The seed shaft (30) has a lower end surface (34) to which an SiC seed crystal (36) is to be attached. The crucible (14) accommodates an SiC solution (16). The crucible (14) comprises a main body (140), an intermediate cover (42), and a top cover (44). The main body (140) includes a first cylindrical portion (38), and a bottom portion (40) which is disposed at a lower end portion of the first cylindrical portion (38). The intermediate cover (42) is disposed within the first cylindrical portion (38) and above the liquid level of the SiC solution (16) in the main body (140). The intermediate cover (42) has a first through hole (48) through which the seed shaft (30) is to be passed. The top cover (44) is disposed above the intermediate cover (42). The top cover (44) has a second through hole (52) through which the seed shaft (30) is to be passed.
摘要翻译： 在SiC晶种附近的SiC溶液的区域，同时抑制在SiC溶液的周边区域的温度变化被冷却。 的制造装置包括一个籽晶轴（30），以及坩埚（14）。 籽晶轴（30）的下端表面（34），以SiC晶种的哪个（36）被附接。 坩埚（14）可容纳SiC溶液（16）。 坩埚（14）包括主体（140）至中间盖（42），和一个顶盖（44）。 所述主体（140）包括第一圆筒形部分（38）和设置在所述第一圆柱形部分（38）的下端部设置在底部部分（40）所有。 中间盖（42）在所述第一圆柱部分（38）内和在所述主体（140）的SiC溶液（16）的液面上方。 中间盖（42）具有一第一通孔（48），通过该籽晶轴（30）将被通过。 顶盖（44）的中间罩（42）以上是设置。 顶盖（44）具有通孔（52），通过该籽晶轴（30）是将被传递的第二。
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9.发明公开APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL 有权设备用于生产单晶硅和方法生产的单晶硅
公开(公告)号：EP2660368A1
公开(公告)日：2013-11-06
申请号：EP11854203.4
申请日：2011-12-26
发明人： OKADA, Nobuhiro , KAMEI, Kazuhito , KUSUNOKI, Kazuhiko , YASHIRO, Nobuyoshi , MORIGUCHI, Kouji , DAIKOKU, Hironori , SUZUKI, Hiroshi , ISHII, Tomokazu , SAKAMOTO, Hidemitsu , KADO, Motohisa , KAWAI, Yoichiro
CPC分类号： C30B15/20 , C30B15/14 , C30B15/30 , C30B15/305 , C30B17/00 , C30B29/36 , Y10T117/1068
摘要： A manufacturing apparatus of a SiC single crystal which facilitates feeding of carbon to the vicinity of a SiC seed crystal. A control unit controls a induction heating unit such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1), where D1 (mm) indicates a permeation depth of electromagnetic waves into a side wall of a crucible by the induction heating unit, D2 (mm) indicates a permeation depth of electromagnetic waves into a SiC solution, T (mm) indicates a thickness of the side wall of the crucible, and R (mm) indicates an inner radius of the crucible: D 1 - T × D 2 / R > 1
where, D1 is defined by Formula (2), and D2 by Formula (3): D 1 = 503292 × 1 / f × σc × μc 1 / 2 D 2 = 503292 × 1 / f × σs × μs 1 / 2
where, σc is an electric conductivity (S/m) of the sidewall, and σs is an electric conductivity (S/m) of the SiC solution; µc is a relative permeability (dimensionless quantity) of the sidewall, and µs is a relative permeability (dimensionless quantity) of the SiC solution.-
公开(公告)号：EP2876189B1
公开(公告)日：2019-03-27
申请号：EP13819242.2
申请日：2013-07-10
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