公开(公告)号：EP2660368B1

公开(公告)日：2018-04-25

申请号：EP11854203.4

申请日：2011-12-26

申请人： Toyota Jidosha Kabushiki Kaisha

发明人： OKADA, Nobuhiro ,  KAMEI, Kazuhito ,  KUSUNOKI, Kazuhiko ,  YASHIRO, Nobuyoshi ,  MORIGUCHI, Kouji ,  DAIKOKU, Hironori ,  SUZUKI, Hiroshi ,  ISHII, Tomokazu ,  SAKAMOTO, Hidemitsu ,  KADO, Motohisa ,  KAWAI, Yoichiro

IPC分类号： C30B29/36 ,  C30B15/00

CPC分类号： C30B15/20 ,  C30B15/14 ,  C30B15/30 ,  C30B15/305 ,  C30B17/00 ,  C30B29/36 ,  Y10T117/1068

摘要： A manufacturing apparatus of a SiC single crystal which facilitates feeding of carbon to the vicinity of a SiC seed crystal. A control unit controls a induction heating unit such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1), where D1 (mm) indicates a permeation depth of electromagnetic waves into a side wall of a crucible by the induction heating unit, D2 (mm) indicates a permeation depth of electromagnetic waves into a SiC solution, T (mm) indicates a thickness of the side wall of the crucible, and R (mm) indicates an inner radius of the crucible: D �¢ 1 - T × D �¢ 2 / R > 1 where, D1 is defined by Formula (2), and D2 by Formula (3): D �¢ 1 = 503292 × 1 / f × Ãc × ¼c 1 / 2 D �¢ 2 = 503292 × 1 / f × Ãs × ¼s 1 / 2 where, Ãc is an electric conductivity (S/m) of the sidewall, and Ãs is an electric conductivity (S/m) of the SiC solution; µc is a relative permeability (dimensionless quantity) of the sidewall, and µs is a relative permeability (dimensionless quantity) of the SiC solution.

公开(公告)号：EP3249082A2

公开(公告)日：2017-11-29

申请号：EP15879101.2

申请日：2015-12-31

申请人： LG Siltron Incorporated

发明人： KIM, Yun-Goo ,  NA, Gwang-Ha ,  AN, Yun-Ha

IPC分类号： C30B15/20 ,  C30B15/32 ,  C30B29/06

CPC分类号： C30B15/20 ,  C30B15/30 ,  C30B15/32 ,  C30B29/06 ,  C30B35/007

摘要： The embodiments of the present invention provides a diameter controlling system of the single crystal ingot for controlling a diameter deviation of a silicon ingot during the growth of silicon ingot by a Czochralski method, it may include a seed chuck for supporting a silicon ingot combined with a seed crystal and grown; a measuring part connected to an upper surface of the seed chuck with a cable and configured to measure a load applied to the seed chuck; a load adjusting part for moving a position of the seed chuck vertically while the seed chuck is connected to the cable to change a load applied to the silicon ingot; and a controlling part for controlling the load applied to the silicon ingot by driving the load adjusting part according to the load value measured from the measuring part. Therefore, shaking of the seed during the growth process of the single crystal ingot is prevented, and thus the diameter deviation of the growing single crystal ingot may be reduced.

摘要翻译： 本发明的实施例提供了一种单晶硅锭的直径控制系统，用于通过切克劳斯基方法控制硅锭生长期间硅锭的直径偏差，其可以包括种子吸盘，用于支撑与硅锭相结合的硅锭 晶种并长大; 测量部分，所述测量部分通过缆线连接到所述种子卡盘的上表面并且被配置为测量施加到所述种子卡盘的负载; 负载调节部分，用于在籽晶卡盘连接到电缆时垂直移动籽晶卡盘的位置，以改变施加到硅锭的负载; 以及控制部分，用于根据从测量部分测量的负载值驱动负载调节部分来控制施加到硅锭的负载。 因此，防止了在单晶锭的生长过程中晶种的晃动，并且因此可以减小生长的单晶锭的直径偏差。

公开(公告)号：EP3012353B1

公开(公告)日：2017-03-08

申请号：EP14813873.8

申请日：2014-03-20

申请人： Sumitomo Metal Mining Co., Ltd.

发明人： MATSUI, Masayoshi ,  TATSUMIYA, Kazuki ,  ISHIDA, Fumiaki

IPC分类号： C30B29/28 ,  C30B15/20

CPC分类号： C30B15/30 ,  C30B15/20 ,  C30B29/20 ,  C30B29/28 ,  G02F1/0036 ,  G02F1/093

公开(公告)号：EP2418307A3

公开(公告)日：2013-12-04

申请号：EP11188430.0

申请日：2005-04-06

申请人： Saint-Gobain Ceramics and Plastics, Inc.

发明人： Locher, John Walter ,  Zanella, Steven Anthony ,  Maclean, Ralph Lampson, Jr. ,  Bates, Herbert Ellsworth

IPC分类号： C30B29/20 ,  C30B15/34

CPC分类号： C30B15/30 ,  C30B15/34 ,  C30B29/20 ,  Y10T117/1044 ,  Y10T428/2495 ,  Y10T428/26

摘要： Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods for forming such crystals and an apparatus for carrying out the methods are disclosed as well. Particularly, a method of forming a single crystal is described, comprising providing a melt in a crucible of a melt fixture, the melt fixture having a die open to the crucible and a plurality of thermal shields overlaying the crucible and the die, the thermal shield having a stepped configuration; and drawing a single crystal from the die. Moreover, a melt fixture is described comprising a crucible; a die open to and extending along a length of the crucible; and a plurality of thermal shields overlaying the crucible and the die, the thermal shield having a stepped configuration.

公开(公告)号：EP2128088B1

公开(公告)日：2013-05-29

申请号：EP08703609.1

申请日：2008-01-22

申请人： Kojima, Gen ,  Yokoyama, Hiroshi

发明人： KOJIMA, Gen ,  YOKOYAMA, Hiroshi ,  HAYASHI, Yutaka

IPC分类号： C01B33/02 ,  C30B29/06 ,  H01L31/04 ,  C30B11/00 ,  C30B15/00 ,  C30B15/30 ,  H01L31/18 ,  C30B28/10

CPC分类号： H01L31/182 ,  C30B15/002 ,  C30B15/007 ,  C30B15/30 ,  C30B28/10 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521

公开(公告)号：EP1538242B8

公开(公告)日：2013-04-03

申请号：EP03795314.8

申请日：2003-09-08

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： SONOKAWA, Susumu, Shin-Etsu Handotai Co., Ltd ,  HOSHI, Ryoji, Shin-Etsu Handotai Co., Ltd. ,  SATO, Wataru, Shin-Etsu Handotai Co., Ltd. ,  OHTA, Tomohiko, Shin-Etsu Handotai Co., Ltd.

IPC分类号： C30B15/14 ,  C30B35/00 ,  C30B15/30 ,  C30B30/04

CPC分类号： C30B15/30 ,  C30B15/14 ,  C30B30/04 ,  C30B35/00 ,  Y10S117/90 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

公开(公告)号：EP2177648B1

公开(公告)日：2013-02-13

申请号：EP10152849.5

申请日：2003-10-31

申请人： MEMC Electronic Materials, Inc.

发明人： Lu, Zheng ,  Kimbel, Steven L ,  Tao, Ying

IPC分类号： C30B15/30 ,  C30B15/00 ,  C30B29/06 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  C30B15/30 ,  Y10T117/1072 ,  Y10T117/1076

公开(公告)号：EP2128088A4

公开(公告)日：2012-03-07

申请号：EP08703609

申请日：2008-01-22

申请人： KOJIMA GEN ,  YOKOYAMA HIROSHI

发明人： KOJIMA GEN ,  YOKOYAMA HIROSHI ,  HAYASHI YUTAKA

IPC分类号： C01B33/02 ,  C30B11/00 ,  C30B15/00 ,  C30B15/30 ,  C30B28/10 ,  C30B29/06 ,  H01L31/04 ,  H01L31/18

CPC分类号： H01L31/182 ,  C30B15/002 ,  C30B15/007 ,  C30B15/30 ,  C30B28/10 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521

公开(公告)号：EP2105522A3

公开(公告)日：2011-11-02

申请号：EP09008527.5

申请日：2004-10-25

申请人： PVA TePla AG

发明人： Mühe, Andreas ,  Altekrüger, Burkhard ,  Vonhoff, Axel

IPC分类号： C30B11/00 ,  C30B15/30 ,  C30B15/14

CPC分类号： C30B15/30 ,  C30B11/00 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/10

摘要： Die hier vorgestellte Erfindung bezieht sich auf eine Kristallzüchtungsanlage. Diese verfügt im Allgemeinen über einen Widerstandsheizer zum Beheizen der Schmelze (13) als auch über Feldspulen (Induktoren), die im Tiegel (11) ein Wechselmagnetfeld erzeugen, mit dem in der Schmelze (13) Ströme induziert werden.
Die Erfindung sieht vor, dass der Widerstandsheizer zugleich als Feldspule ausgebildet ist, das heißt, von einem holzylindrischen Körper (1) gebildet wird, bei dem durch einen umlaufenden Schlitz (2) ein spiralförmiger, einlagiger Strompfad gebildet ist. Dies hat den Vorteil, dass der zur elektrischen Beheizung der Anlage benötigte Strom gleichzeitig zur Erzeugung eines magnetischen wanderfeldes benutzt wird. Dadurch sind weder separate Feldspulen noch eine separate Stromversorgung für die Feldspulen erforderlich. Weiterhin ist der auch als Feldspule dienende Widerstandsheizer, der zugleich als Spulenanordnung ausgebildet ist, hochtemperaturbeständig und umgibt unmittelbar die heiße Kernzone der Anlage und damit den Schmelzbereich. Dadurch wird das Volumen, innerhalb dessen das Magnetfeld erzeugt werden muss, minimiert. Weiterhin muss das magnetische Wechselfeld nicht die Kesselwand der Kristallzüchtungsanlage durchdringen, wodurch die Kesselwand in konventioneller weise als Stahlkessel ausgeführt werden kann .

公开(公告)号：EP2292813A1

公开(公告)日：2011-03-09

申请号：EP10175492.7

申请日：2010-09-06

申请人： SUMCO Corporation

发明人： Uto, Masayuki ,  Tomonaga, Tuneaki ,  Kubota, Toshimichi ,  Ogawa, Fukuo ,  Narushima, Yasuhito

IPC分类号： C30B15/20 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/04 ,  C30B15/20 ,  C30B15/22 ,  C30B15/30 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032

摘要： The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides a method of producing single crystal silicon by the Czochralski process, comprising producing single crystal silicon having relatively low resistivity by controlling a height of a solid-liquid interface when the single crystal silicon is pulled up.

摘要翻译： 本发明提供一种能够通过防止晶体生长期间的细胞生长而产生具有相对低电阻率的单晶硅的技术，特别是在向熔融硅原料中添加相对大量的掺杂剂的情况下。 具体地说，本发明提供了一种通过切克劳斯基法生产单晶硅的方法，包括当单晶硅被拉起时通过控制固 - 液界面的高度来制造具有较低电阻率的单晶硅。