COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY
    1.
    发明公开
    COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY 有权
    ZUSAMMENSETZUNG ZUR BILDUNG EINER ANTIREFLEXSCHICHTFÜRDIE LITHOGRAPHIE

    公开(公告)号:EP1560070A1

    公开(公告)日:2005-08-03

    申请号:EP03751376.9

    申请日:2003-10-08

    IPC分类号: G03F7/11 H01L21/027

    摘要: There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.

    摘要翻译: 提供了一种用于形成用于抗反射涂层的抗反射涂层的组合物,其在用于制造半导体器件的波长处具有良好的吸收光,其对光反射具有高保护效果,其具有高的干蚀刻速率 与光致抗蚀剂层相比。 具体地,用于形成抗反射涂层的组合物含有在氮原子上具有羟烷基结构作为取代基的三嗪三酮化合物,低聚物化合物或高分子化合物。