公开(公告)号：EP2789668A1

公开(公告)日：2014-10-15

申请号：EP12854706.4

申请日：2012-11-12

Applicant: Nissan Chemical Industries, Ltd.

Inventor： NISHITA, Tokio ,  MIZUOCHI, Ryuta ,  SAKAMOTO, Rikimaru ,  YAMADA, Tomohisa ,  NAKAIE, Naoki ,  TAKAYAMA, Yuki

IPC: C09K3/16 ,  C07C209/10 ,  C07C211/54 ,  G03F7/11 ,  C07B61/00

CPC classification number: C07C211/54 ,  C08G73/0266 ,  C08L79/02 ,  C09D179/02 ,  G03F1/00 ,  G03F7/093 ,  G03F7/11 ,  H01B1/128

Abstract: There is provided a composition for forming an antistatic film that has a superior coating performance on the surface of a resist film and forms antistatic film capable of protecting a resist film from being charged. A composition for forming an antistatic film, comprising: an oligomer compound of Formula (1A):

(where R 1 is a hydrogen atom or a group of Formula (2), each of R 2 and R 3 is independently a hydrogen atom, a group of Formula (3), or a group of Formula (4), at least one of the plurality of Rs is a sulfo group, a and b are positive integers satisfying 2 ≤ (a + b) ≤ 6; and each of a plurality of xs is independently an integer from 0 to 4):



(where n is an integer satisfying 1 ≤ n

Abstract translation: 提供一种用于形成抗静电膜的组合物，其在抗蚀剂膜的表面上具有优异的涂层性能，并形成能够保护抗蚀剂膜不被带电的抗静电膜。 用于形成抗静电膜的组合物，其包含：式（1A）的低聚物化合物：其中R 1为氢原子或式（2）的基团，R 2和R 3各自独立地为氢原子， 式（3）的基团或式（4）的基团，所述多个R s中的至少一个是磺基，a和b是满足2‰（a + b）‰6的正整数; 多个x的独立的数为0〜4的整数）：（n为满足1‰的整数¤n<（a + b + 4）; a，b，多个Rs，x与 式（1A）中的那些;多个y中的每一个独立地为0至5的整数）; 和水。

公开(公告)号：EP2937391A1

公开(公告)日：2015-10-28

申请号：EP13864158.4

申请日：2013-12-13

Applicant: Nissan Chemical Industries, Ltd.

Inventor： SOMEYA, Yasunobu ,  WAKAYAMA, Hiroyuki ,  ENDO, Takafumi ,  SAKAMOTO, Rikimaru

IPC: C09D201/00 ,  B05D1/38 ,  B05D3/10 ,  B05D7/24 ,  C09D5/00 ,  C09D125/00 ,  C09D139/04 ,  C09D145/00 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027

CPC classification number: C08J5/18 ,  B05D1/005 ,  B05D1/322 ,  B05D3/0254 ,  C08F212/32 ,  C08J2325/02 ,  C08J2325/08 ,  C08J2325/14 ,  C08J2333/12 ,  C08J2339/04 ,  C09D139/04 ,  C09D145/00 ,  C09D153/00 ,  C09D201/00 ,  G03F7/0002 ,  Y10T428/24802 ,  C08F2220/281 ,  C08F2220/325 ,  C08F220/20 ,  C08F212/14 ,  C08F226/06 ,  C08F220/14 ,  C08F212/06

Abstract: There is provided an underlayer film for a self-assembled film and that does not intermix (layer-mix) with the self-assembled film as the upper layer and that enables the formation of a vertical pattern of the self-assembled film. An underlayer film-forming composition for a self-assembled film comprising a polymer including 0.2% by mole or more of a unit structure of a polycyclic aromatic vinyl compound relative to all unit structures of the polymer. The polymer includes 20% by mole or more of a unit structure of an aromatic vinyl compound relative to all the unit structures of the polymer and includes 1% by mole or more of a unit structure of the polycyclic aromatic vinyl compound relative to all the unit structures of the aromatic vinyl compound. The aromatic vinyl compound includes an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole. The aromatic vinyl compound includes an optionally substituted styrene and an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole.

公开(公告)号：EP2251742A1

公开(公告)日：2010-11-17

申请号：EP09712004.2

申请日：2009-02-19

Applicant: Nissan Chemical Industries, Ltd.

Inventor： SAKAMOTO, Rikimaru ,  ENDO, Takafumi

IPC: G03F7/11 ,  C08G59/42

CPC classification number: G03F7/091 ,  C08G59/1455 ,  C08G63/20 ,  C08G63/42 ,  C08G63/668 ,  C08G63/6854

Abstract: It is an object to provide a resist underlayer film forming composition having a large selection ratio of a dry etching rate, and having a k value and an n value at a short wavelength such as an ArF excimer laser, both of which exhibit desired values. There is provided a resist underlayer film forming composition containing a polymer obtained by reacting at least a tetracarboxylic dianhydride having an alicyclic structure or an aliphatic structure and a diepoxy compound having two epoxy groups with an organic solvent containing an alcohol-based compound having an OH group, and a solvent.

Abstract translation: 它是劝到目的是提供具有一个干式蚀刻的选择比大，并且在短波长具有的k值和n值的抗蚀剂下层膜形成用组合物：如ArF受激准分子激光，两者表现出所希望的值的。 本发明提供一种抗蚀剂下层膜形成用组合物含有通过使至少具有脂环式结构或脂肪族结构，并具有在在具有OH基醇系化合物含有有机溶剂的具有两个环氧基的二环氧化合物使四羧酸二酐而得到的聚合物 和溶剂。

公开(公告)号：EP2881794A1

公开(公告)日：2015-06-10

申请号：EP13825237.4

申请日：2013-07-29

Applicant: Nissan Chemical Industries, Ltd.

Inventor： SHIBAYAMA, Wataru ,  SHIGAKI, Shuhei ,  SAKAMOTO, Rikimaru

IPC: G03F7/11 ,  H01L21/027

CPC classification number: C08K5/42 ,  C09D183/04 ,  G03F7/0045 ,  G03F7/0752 ,  G03F7/0755 ,  G03F7/0757 ,  G03F7/094 ,  G03F7/11 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144 ,  C08K5/092

Abstract: There is provided a resist underlayer film-forming composition for EUV lithography which shows good resist shape. A resist underlayer film-forming composition for EUV lithography, comprising: a hydrolyzable organosilane, a hydrolyzed product thereof, or a hydrolyzed condensate thereof, as a silane; and a salt of a sulfonic acid ion containing a hydrocarbon group with an onium ion. The hydrolyzable organosilane preferably comprises at least one organic silicon compound selected from the group consisting of compounds of Formula (1):

        R 1 a Si(R 2 ) 4-a      Formula (1)

and compounds of Formula (2):

        [R 3 c Si(R 4 ) 3-c ] 2 Y b      Formula (2)

a hydrolyzed product thereof, or a hydrolyzed condensate thereof. A method for manufacturing a semiconductor device, the method comprising: forming an organic underlayer film on a semiconductor substrate; forming a resist underlayer film by applying the resist underlayer film-forming composition onto the organic underlayer film, and then baking the applied resist underlayer film-forming composition; forming a resist film by applying a composition for EUV resists onto the resist underlayer film; EUV-exposing the resist film; and obtaining a resist pattern by developing the exposed resist film.

Abstract translation: 提供了用于EUV光刻的抗蚀剂下层膜形成组合物，其显示出良好的抗蚀剂形状。 一种用于EUV光刻的抗蚀剂下层膜形成组合物，包括：可水解的有机硅烷，其水解产物或其水解缩合物作为硅烷; 以及含有烃基的磺酸离子与鎓离子的盐。 可水解的有机硅烷优选包含至少一种选自式（1）的化合物的有机硅化合物：€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 1 a Si（R 2）4-a €ƒ€ƒ€ƒ€ƒFormula（1）和式（2）的化合物：€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[R 3 c Si（R 4）3-c] （2）其水解产物，或其水解缩合物。 一种制造半导体器件的方法，所述方法包括：在半导体衬底上形成有机下层膜; 通过将抗蚀剂下层膜形成组合物涂覆在有机下层膜上形成抗蚀剂下层膜，然后烘烤所形成的抗蚀剂下层膜组合物; 通过在抗蚀剂下层膜上施加用于EUV抗蚀剂的组合物形成抗蚀剂膜; EUV曝光抗蚀膜; 并通过显影曝光的抗蚀剂膜获得抗蚀剂图案。

公开(公告)号：EP2120095B1

公开(公告)日：2013-04-24

申请号：EP08711564.8

申请日：2008-02-19

Applicant: Nissan Chemical Industries, Ltd.

Inventor： ENOMOTO, Tomoyuki ,  SAKAGUCHI, Takahiro ,  SAKAMOTO, Rikimaru ,  NAGAI, Masaki

IPC: G03F7/11 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/2059

公开(公告)号：EP2789668B1

公开(公告)日：2018-03-28

申请号：EP12854706.4

申请日：2012-11-12

Applicant: Nissan Chemical Industries, Ltd.

Inventor： NISHITA, Tokio ,  MIZUOCHI, Ryuta ,  SAKAMOTO, Rikimaru ,  YAMADA, Tomohisa ,  NAKAIE, Naoki ,  TAKAYAMA, Yuki

IPC: C09K3/16 ,  C07C209/10 ,  C07C211/54 ,  G03F7/11 ,  C07B61/00 ,  C08L79/02 ,  C09D179/02 ,  C08G73/02 ,  G03F7/09

CPC classification number: C07C211/54 ,  C08G73/0266 ,  C08L79/02 ,  C09D179/02 ,  G03F1/00 ,  G03F7/093 ,  G03F7/11 ,  H01B1/128

Abstract: There is provided a composition for forming an antistatic film that has a superior coating performance on the surface of a resist film and forms antistatic film capable of protecting a resist film from being charged. A composition for forming an antistatic film, comprising: an oligomer compound of Formula (1A): (where R 1 is a hydrogen atom or a group of Formula (2), each of R 2 and R 3 is independently a hydrogen atom, a group of Formula (3), or a group of Formula (4), at least one of the plurality of Rs is a sulfo group, a and b are positive integers satisfying 2 ‰¤ (a + b) ‰¤ 6; and each of a plurality of xs is independently an integer from 0 to 4): (where n is an integer satisfying 1 ‰¤ n

公开(公告)号：EP2251742B1

公开(公告)日：2012-05-16

申请号：EP09712004.2

申请日：2009-02-19

Applicant: Nissan Chemical Industries, Ltd.

Inventor： SAKAMOTO, Rikimaru ,  ENDO, Takafumi

IPC: C08G59/42 ,  G03F7/09 ,  G03F7/11

CPC classification number: G03F7/091 ,  C08G59/1455 ,  C08G63/20 ,  C08G63/42 ,  C08G63/668 ,  C08G63/6854

Abstract: Disclosed is a composition for forming a resist underlayer film having high selectivity ratio of etching rate, while having desired k value and n value for a short wavelength such as an ArF excimer laser. Specifically disclosed is a composition for forming a resist underlayer film, which contains a polymer and a solvent. The polymer is obtained from a reaction using at least a tetracarboxylic acid dianhydride having an alicyclic structure or an aliphatic structure and a diepoxy compound having two epoxy groups, which reaction is performed together with an organic solvent containing an alcohol compound having an OH group.

公开(公告)号：EP1560070B1

公开(公告)日：2009-12-30

申请号：EP03751376.9

申请日：2003-10-08

Applicant: Nissan Chemical Industries, Ltd.

Inventor： KISHIOKA, Takahiro ,  MIZUSAWA, Ken-ichi, c/o Nissan Chemical Ind., Ltd ,  ENOMOTO, Tomoyuki ,  SAKAMOTO, Rikimaru ,  NAKAYAMA, Keisuke ,  KAWAMURA, Yasuo

IPC: G03F7/11 ,  G03F7/09 ,  C07D251/34

CPC classification number: H01L21/0276 ,  G03F7/038 ,  G03F7/091 ,  Y10S430/106

公开(公告)号：EP1939688A1

公开(公告)日：2008-07-02

申请号：EP05788391.0

申请日：2005-09-27

Applicant: Nissan Chemical Industries, Ltd.

Inventor： KISHIOKA, Takahiro ,  SAKAMOTO, Rikimaru ,  MARUYAMA, Daisuke

IPC: G03F7/11

CPC classification number: G03F7/091

Abstract: There is provided anti-reflective coating forming composition containing a reaction product of an isocyanuric acid compound having two or three 2,3-epoxypropyl groups with a benzoic acid compound. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, can form a photoresist pattern having no footing at the lower part, and can use in lithography process by use of a light such as ArF excimer laser beam and F2 excimer laser beam, etc.

公开(公告)号：EP2937385A1

公开(公告)日：2015-10-28

申请号：EP13864564.3

申请日：2013-12-16

Applicant: Nissan Chemical Industries, Ltd.

Inventor： SOMEYA, Yasunobu ,  WAKAYAMA, Hiroyuki ,  ENDO, Takafumi ,  SAKAMOTO, Rikimaru

IPC: C08L25/04 ,  C08F12/08 ,  C08K5/3447 ,  C09D125/08 ,  G03F7/38 ,  H01L21/027

CPC classification number: C09D125/14 ,  C08F212/08 ,  C09D125/08 ,  C09D153/00 ,  G02B1/111 ,  G03F7/0002 ,  G03F7/09 ,  Y10T428/24802 ,  C08F2220/325 ,  C08F2220/281 ,  C08F212/14 ,  C08F220/06 ,  C08F212/12 ,  C08F220/14

Abstract: There is provided a composition for forming an underlayer film used for an underlayer of a self-organizing film.
An underlayer film-forming composition of a self-organizing film, the underlayer film-forming composition comprising: a polymer consisting of a unit structure derived from an optionally substituted styrene and a unit structure derived from a crosslink forming group-containing compound, the polymer containing 60 mol% to 95 mol% of the unit structure derived from the styrene and 5 mol% to 40 mol% of the unit structure derived from the crosslink forming group-containing compound relative to the whole unit structures of the polymer. The crosslink forming group is a hydroxy group, an epoxy group, a protected hydroxy group, or a protected carboxy group. The crosslink forming group-containing compound is hydroxyethyl methacrylate, hydroxyethyl acrylate, hydroxypropyl methacrylate, hydroxypropyl acrylate, hydroxystyrene, acrylic acid, methacrylic acid, glycidyl methacrylate, or glycidyl acrylate.

Abstract translation: 提供了一种用于形成用于自组织膜的底层的下层膜的组合物。 一种自组织膜的下层膜形成组合物，所述下层膜形成组合物包含：由任选取代的苯乙烯衍生的单元结构和衍生自含交联形成基团的化合物的单元结构组成的聚合物，所述聚合物 含有衍生自苯乙烯的单元结构的60摩尔％〜95摩尔％，衍生自含交联性基团的化合物的单元结构的5摩尔％〜40摩尔％相对于聚合物的整体单位结构。 交联形成基团是羟基，环氧基，被保护的羟基或被保护的羧基。 含交联性基团的化合物是甲基丙烯酸羟乙酯，丙烯酸羟乙酯，甲基丙烯酸羟丙酯，丙烯酸羟丙酯，羟基苯乙烯，丙烯酸，甲基丙烯酸，甲基丙烯酸缩水甘油酯或丙烯酸缩水甘油酯。