公开(公告)号：EP2813890B1

公开(公告)日：2018-05-30

申请号：EP14171729.8

申请日：2014-06-10

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Hatakeyama, Jun ,  Kori, Daisuke ,  Ogihara, Tsutomu

IPC分类号： G03F7/09 ,  G03F7/42 ,  G03F7/075

CPC分类号： H01L21/0276 ,  C08G8/04 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/425 ,  H01L21/266

摘要： In lithography, a composition comprising a novolak resin comprising recurring units derived from a naphtholphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO 2 substrates.

公开(公告)号：EP3007208B1

公开(公告)日：2018-04-18

申请号：EP15187641.4

申请日：2015-09-30

申请人： TOKYO ELECTRON LIMITED

发明人： KIHARA, Yoshihide ,  HISAMATSU, Toru

IPC分类号： H01L21/033 ,  H01L21/316

CPC分类号： H01L21/0338 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139

摘要： A controllability of a size of a mask can be improved in a multi-patterning method. A process of forming a silicon oxide film on a first mask and an antireflection film is performed. In this process, plasma of a first gas including a silicon halide gas and plasma of a second gas including an oxygen gas are alternately generated. Then, a region of the silicon oxide film is removed such that only a region along a side wall of the first mask is left, and then, the first mask is removed and the antireflection film and an organic film is etched.

公开(公告)号：EP3007208A1

公开(公告)日：2016-04-13

申请号：EP15187641.4

申请日：2015-09-30

申请人： TOKYO ELECTRON LIMITED

发明人： KIHARA, Yoshihide ,  HISAMATSU, Toru

IPC分类号： H01L21/033 ,  H01L21/316

CPC分类号： H01L21/0338 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139

摘要： A controllability of a size of a mask can be improved in a multi-patterning method. A process of forming a silicon oxide film on a first mask and an antireflection film is performed. In this process, plasma of a first gas including a silicon halide gas and plasma of a second gas including an oxygen gas are alternately generated. Then, a region of the silicon oxide film is removed such that only a region along a side wall of the first mask is left, and then, the first mask is removed and the antireflection film and an organic film is etched.

摘要翻译： 在多图案化方法中可以提高掩模尺寸的可控性。 执行在第一掩模和抗反射膜上形成氧化硅膜的工艺。 在该方法中，交替地产生包括卤化硅气体的第一气体和包括氧气的第二气体的等离子体的等离子体。 然后，去除氧化硅膜的区域，使得仅留下沿着第一掩模的侧壁的区域，然后去除第一掩模，并且蚀刻抗反射膜和有机膜。

公开(公告)号：EP2390722B1

公开(公告)日：2016-02-10

申请号：EP11168171.4

申请日：2011-05-31

申请人： Rohm and Haas Electronic Materials LLC

发明人： Bae, Young Cheol ,  Wang, Deyan ,  Cardolaccia, Thomas ,  Kang, Seokho ,  Bell, Rosemary

IPC分类号： G03F7/039 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32

CPC分类号： G03F7/0382 ,  C07C69/54 ,  C07C2603/74 ,  C08F2220/283 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0276

公开(公告)号：EP2813889A3

公开(公告)日：2014-12-31

申请号：EP14171724.9

申请日：2014-06-10

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Hatakeyama, Jun ,  Kori, Daisuke ,  Ogihara, Tsutomu

IPC分类号： G03F7/09 ,  G03F7/42 ,  G03F7/075

CPC分类号： H01L21/266 ,  C08G8/04 ,  G03F7/09 ,  G03F7/094 ,  G03F7/40 ,  H01L21/0276

摘要： In lithography, a composition comprising a novolak resin comprising recurring units derived from a phenolphthalein, Phenol Red, Cresolphthalein, Cresol Red, or Thymolphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO 2 substrates.

公开(公告)号：EP2813890A2

公开(公告)日：2014-12-17

申请号：EP14171729.8

申请日：2014-06-10

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Hatakeyama, Jun ,  Kori, Daisuke ,  Ogihara, Tsutomu

IPC分类号： G03F7/09 ,  G03F7/42

CPC分类号： H01L21/0276 ,  C08G8/04 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/425 ,  H01L21/266

摘要： In lithography, a composition comprising a novolak resin comprising recurring units derived from a naphtholphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO 2 substrates.

摘要翻译： 在平版印刷中，使用包含包含衍生自萘酚酞的重复单元的酚醛清漆树脂的组合物来形成光致抗蚀剂下层膜。 底层膜可在碱性水中剥离，而不会对离子注入的Si衬底或SiO2衬底造成损害。

公开(公告)号：EP2095189A4

公开(公告)日：2010-12-01

申请号：EP07850422

申请日：2007-12-11

申请人： NISSAN CHEMICAL IND LTD

发明人： KATO MASAKAZU ,  HAMADA TAKAHIRO ,  ENOMOTO TOMOYUKI

IPC分类号： G03F7/11 ,  G03F7/095 ,  H01L21/027

CPC分类号： G03F7/091 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/322 ,  H01L21/0276

公开(公告)号：EP1502292B1

公开(公告)日：2010-08-25

申请号：EP03747615.7

申请日：2003-04-28

申请人： Brewer Science, Inc.

发明人： SABNIS, Ram, W.

IPC分类号： H01L21/20 ,  H01L21/36 ,  G02B1/11

CPC分类号： B05D1/62 ,  C09D4/00 ,  C09D165/00 ,  G02B1/111 ,  G03F7/091 ,  G03F7/167 ,  H01L21/0276 ,  C08F238/00

摘要： An improved method for applying polymeric antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise plasma enhanced chemical vapor depositing (PECVD) a polymer on the substrate surfaces. The PECVD processes comprise providing a quantity of a polymer generated by introducing monomer vapors into a plasma state followed by polymerization thereof, with assistance of plasma energy, onto the surface of a substrate. The most preferred starting monomers are phenylacetylene, 4-ethynyltoluene, and 1-ethynyl-2-fluorobenzene. The inventive methods are useful for providing highly conformal antireflective coatings on large surface substrates having super submicron (0.25 µm or smaller) features. The process provides a much faster deposition rate than conventional chemical vapor deposition (CVD) methods, is environmentally friendly, and is economical.

公开(公告)号：EP0989460B1

公开(公告)日：2010-05-26

申请号：EP99912104.9

申请日：1999-04-05

申请人： AZ Electronic Materials USA Corp.

发明人： SHIMOMURA, Koji Matsushita Electronics Corp. ,  KINOSHITA, Yoshiaki Clariant (Japan) K.K. ,  YAMAGUCHI, Yuko Berunina Nibankan 203 ,  FUNATO, Satoru Clariant (Japan) K.K.

IPC分类号： G03F7/004 ,  G03F7/11 ,  G03F7/40 ,  G03F7/09 ,  H01L21/3213

CPC分类号： G03F7/0045 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139

公开(公告)号：EP1560070B1

公开(公告)日：2009-12-30

申请号：EP03751376.9

申请日：2003-10-08

申请人： Nissan Chemical Industries, Ltd.

发明人： KISHIOKA, Takahiro ,  MIZUSAWA, Ken-ichi, c/o Nissan Chemical Ind., Ltd ,  ENOMOTO, Tomoyuki ,  SAKAMOTO, Rikimaru ,  NAKAYAMA, Keisuke ,  KAWAMURA, Yasuo

IPC分类号： G03F7/11 ,  G03F7/09 ,  C07D251/34

CPC分类号： H01L21/0276 ,  G03F7/038 ,  G03F7/091 ,  Y10S430/106