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1.发明公开Semiconductor device having a heterojunction or a Schottky junction 有权Halbleiteranordnung mit einemHeteroübergangoder einem Schottky-Übergang
公开(公告)号：EP1544920A2
公开(公告)日：2005-06-22
申请号：EP04029475.3
申请日：2004-12-13
IPC分类号： H01L29/78 , H01L29/267 , H01L29/24 , H01L29/47
CPC分类号： H01L29/7806 , H01L29/1608 , H01L29/165 , H01L29/47 , H01L29/66068 , H01L29/7802 , H01L29/7803 , H01L29/7813 , H01L29/7817 , H01L29/782 , H01L29/7828
摘要： A semiconductor device includes a heterojunction semiconductor region (9), which forms a heterojunction with a drain region (2). The heterojunction semiconductor region (9) is connected to a source electrode (7), and has a band gap different from a band gap of a semiconductor substrate constituting the drain region (2). It is possible to set the size of an energy barrier against conduction electrons, which is formed between the drain region (2) and the heterojunction semiconductor region (9), into a desired size by changing the conductivity type or the impurity density of the heterojunction semiconductor region (9). This is a characteristic not found in a Schottky junction, in which the size of the energy barrier is inherently determined by a work function of a metal material. It is easy to achieve optimal design of a passive element in response to a withstand voltage system of a MOSFET as a switching element. It is also possible to suppress diffusion potential in a reverse conduction mode and to improve a degree of integration per unit area. As a result, it is possible to reduce the size of elements and to simplify manufacturing processes thereof.
A semiconductor device having a Schottky junction region (10) is moreover disclosed.摘要翻译： 半导体器件包括与漏区（2）形成异质结的异质结半导体区域（9）。 异质结半导体区域（9）连接到源电极（7），并且具有与构成漏极区域（2）的半导体衬底的带隙不同的带隙。 可以通过改变异质结的导电类型或杂质密度，将形成在漏极区域（2）和异质结半导体区域（9）之间的传导电子的能量势垒的尺寸设定为所需的尺寸 半导体区域（9）。 这是在肖特基结中没有发现的特征，其中能量势垒的尺寸固有地由金属材料的功函数决定。 响应于作为开关元件的MOSFET的耐压系统，容易实现无源元件的最佳设计。 也可以抑制反向导通模式的扩散电位，提高单位面积的积分度。 结果，可以减小元件的尺寸并简化其制造工艺。 此外，还公开了具有肖特基结区域（10）的半导体器件。
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公开(公告)号：EP1519419B1
公开(公告)日：2018-02-21
申请号：EP04022463.6
申请日：2004-09-21
IPC分类号： H01L29/78 , H01L29/165 , H01L21/336 , H01L21/04
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/267 , H01L29/7828
摘要： An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which forms a heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, a gate electrode in contact with the gate insulating film, a source electrode, a low resistance region between and in contact with the source electrode and the source region, and connected ohmically with the source electrode, and a drain electrode connected ohmically with the semiconductor body.
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公开(公告)号：EP2560210A1
公开(公告)日：2013-02-20
申请号：EP12192234.8
申请日：2004-09-21
IPC分类号： H01L29/78 , H01L29/267 , H01L29/24 , H01L21/04
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/267 , H01L29/7828
摘要： An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which forms heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, the gate insulating film made of a layer deposited inside a trench formed by selecitve oxidation and oxide removal, a gate electrode in contact with the gate insulating film, a source electrode in contact with the source region, and a drain region in contact with the semiconductor body.
摘要翻译： 本发明的一个方面提供了一种半导体器件，该半导体器件包括：第一导电类型半导体主体;与半导体主体接触的源极区，其与半导体主体的带隙不同，并且与半导体主体形成异质结; 栅极绝缘膜，与源极区域和半导体本体之间的结的一部分接触，栅极绝缘膜由沉积在通过选择性氧化和氧化物去除形成的沟槽内的层形成;栅极，与栅极绝缘膜接触; 与源极区接触的源极以及与半导体主体接触的漏极区。
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公开(公告)号：EP1503425A3
公开(公告)日：2006-01-18
申请号：EP04017889.9
申请日：2004-07-28
IPC分类号： H01L29/861 , H01L29/872 , H01L29/78 , H01L29/80 , H01L29/06 , H01L29/24 , H01L29/267
CPC分类号： H01L29/7805 , H01L21/046 , H01L29/1608 , H01L29/165 , H01L29/66068 , H01L29/7395 , H01L29/7802 , H01L29/7827 , H01L29/7828 , H01L29/8083 , H01L29/861 , H01L29/872
摘要： An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, having a different band gap from the first semiconductor region and forming a heterojunction with the first semiconductor region.
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5.发明公开Heterojunction semiconductor device and method of manufacturing the same 有权Heteroübergang-Halbleiteranordnung und Verfahren zur Herstellung
公开(公告)号：EP1503425A2
公开(公告)日：2005-02-02
申请号：EP04017889.9
申请日：2004-07-28
IPC分类号： H01L29/861 , H01L29/872 , H01L29/78 , H01L29/80 , H01L29/06 , H01L29/24 , H01L29/267
CPC分类号： H01L29/7805 , H01L21/046 , H01L29/1608 , H01L29/165 , H01L29/66068 , H01L29/7395 , H01L29/7802 , H01L29/7827 , H01L29/7828 , H01L29/8083 , H01L29/861 , H01L29/872
摘要： An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, having a different band gap from the first semiconductor region and forming a heterojunction with the first semiconductor region.
摘要翻译： 本发明的一个方面提供了一种半导体器件，其包括第一导电类型的第一半导体区域和第二导电类型的第二半导体区域，其具有与第一半导体区域不同的带隙并与第一半导体形成异质结 地区。
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公开(公告)号：EP2560210B1
公开(公告)日：2018-11-28
申请号：EP12192234.8
申请日：2004-09-21
IPC分类号： H01L29/78 , H01L29/267 , H01L29/165 , H01L21/336
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/267 , H01L29/7828
摘要： An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which forms a heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, a gate electrode in contact with the gate insulating film, a source electrode, a low resistance region between and in contact with the source electrode and the source region, and connected ohmically with the source electrode, and a drain electrode connected ohmically with the semiconductor body.
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公开(公告)号：EP1503425B1
公开(公告)日：2018-09-05
申请号：EP04017889.9
申请日：2004-07-28
IPC分类号： H01L21/04 , H01L29/66 , H01L29/739 , H01L29/78 , H01L29/808 , H01L29/861 , H01L29/872 , H01L29/16 , H01L29/165
CPC分类号： H01L29/7805 , H01L21/046 , H01L29/1608 , H01L29/165 , H01L29/66068 , H01L29/7395 , H01L29/7802 , H01L29/7827 , H01L29/7828 , H01L29/8083 , H01L29/861 , H01L29/872
摘要： An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, having a different band gap from the first semiconductor region and forming a heterojunction with the first semiconductor region.
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公开(公告)号：EP1544920B1
公开(公告)日：2014-05-07
申请号：EP04029475.3
申请日：2004-12-13
IPC分类号： H01L29/78 , H01L29/267 , H01L29/24 , H01L29/47
CPC分类号： H01L29/7806 , H01L29/1608 , H01L29/165 , H01L29/47 , H01L29/66068 , H01L29/7802 , H01L29/7803 , H01L29/7813 , H01L29/7817 , H01L29/782 , H01L29/7828
摘要： A semiconductor device includes a heterojunction semiconductor region (9), which forms a heterojunction with a drain region (2). The heterojunction semiconductor region (9) is connected to a source electrode (7), and has a band gap different from a band gap of a semiconductor substrate constituting the drain region (2). It is possible to set the size of an energy barrier against conduction electrons, which is formed between the drain region (2) and the heterojunction semiconductor region (9), into a desired size by changing the conductivity type or the impurity density of the heterojunction semiconductor region (9). This is a characteristic not found in a Schottky junction, in which the size of the energy barrier is inherently determined by a work function of a metal material. It is easy to achieve optimal design of a passive element in response to a withstand voltage system of a MOSFET as a switching element. It is also possible to suppress diffusion potential in a reverse conduction mode and to improve a degree of integration per unit area. As a result, it is possible to reduce the size of elements and to simplify manufacturing processes thereof. A semiconductor device having a Schottky junction region (10) is moreover disclosed.
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公开(公告)号：EP1544920A3
公开(公告)日：2010-06-02
申请号：EP04029475.3
申请日：2004-12-13
IPC分类号： H01L29/78 , H01L29/267 , H01L29/24 , H01L29/47
CPC分类号： H01L29/7806 , H01L29/1608 , H01L29/165 , H01L29/47 , H01L29/66068 , H01L29/7802 , H01L29/7803 , H01L29/7813 , H01L29/7817 , H01L29/782 , H01L29/7828
摘要： A semiconductor device includes a heterojunction semiconductor region (9), which forms a heterojunction with a drain region (2). The heterojunction semiconductor region (9) is connected to a source electrode (7), and has a band gap different from a band gap of a semiconductor substrate constituting the drain region (2). It is possible to set the size of an energy barrier against conduction electrons, which is formed between the drain region (2) and the heterojunction semiconductor region (9), into a desired size by changing the conductivity type or the impurity density of the heterojunction semiconductor region (9). This is a characteristic not found in a Schottky junction, in which the size of the energy barrier is inherently determined by a work function of a metal material. It is easy to achieve optimal design of a passive element in response to a withstand voltage system of a MOSFET as a switching element. It is also possible to suppress diffusion potential in a reverse conduction mode and to improve a degree of integration per unit area. As a result, it is possible to reduce the size of elements and to simplify manufacturing processes thereof.
A semiconductor device having a Schottky junction region (10) is moreover disclosed.-
公开(公告)号：EP1519419A3
公开(公告)日：2010-01-13
申请号：EP04022463.6
申请日：2004-09-21
IPC分类号： H01L29/78 , H01L29/267 , H01L29/24 , H01L21/04
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/267 , H01L29/7828
摘要： An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which forms a heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, a gate electrode in contact with the gate insulating film, a source electrode, a low resistance region between and in contact with the source electrode and the source region, and connected ohmically with the source electrode, and a drain electrode connected ohmically with the semiconductor body.
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