公开(公告)号：EP2562796A2

公开(公告)日：2013-02-27

申请号：EP12181659.9

申请日：2012-08-24

申请人： Novellus Systems, Inc.

发明人： Shaviv, Roey ,  Ostrowski, Kirk ,  Cheung, David ,  Park, Joon ,  Thedjoisworo, Bayu ,  Lord, Patrick J.

IPC分类号： H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32449 ,  H01J37/32724

摘要： Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2% - 16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.

摘要翻译： 本文提供了减少硅晶片或其它基板中的位错的氢基光刻胶剥离操作的方法和装置。 根据各种实施方案，氢基光刻胶剥离方法可以采用以下一种或多种技术：1）通过使用具有最小超标时间的短过程来最小化氢预算，2）提供稀氢，例如2％-16％ 氢气浓度，3）通过控制工艺条件和化学反应来最小化材料损耗，4）使用低温抗蚀剂条，5）控制植入物条件和浓度，以及6）执行一个或多个后带通风过程。 还提供了适用于执行光刻胶剥离方法的设备。

公开(公告)号：EP2562796A3

公开(公告)日：2013-09-18

申请号：EP12181659.9

申请日：2012-08-24

申请人： Novellus Systems, Inc.

发明人： Shaviv, Roey ,  Ostrowski, Kirk ,  Cheung, David ,  Park, Joon ,  Thedjoisworo, Bayu ,  Lord, Patrick J.

IPC分类号： H01L21/311 ,  G03F7/42 ,  H01J37/32

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32449 ,  H01J37/32724

摘要： Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2% - 16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.