公开(公告)号：EP2259303A3

公开(公告)日：2012-11-28

申请号：EP10164594.3

申请日：2010-06-01

申请人： Novellus Systems, Inc.

发明人： Yu, Jengyi ,  Wu, Hui-Jung ,  Dixit, Girish ,  Van Schravendijk, Bart ,  Subramonium, Pramod ,  Jiang, Gengwei ,  Antonelli, George Andrew ,  O`Loughlin, Jennifer

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/76834 ,  H01L21/02074 ,  H01L21/76832 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76888

摘要： Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing A1, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu-O bonds is contacted with trimethylaluminum to form a precursor layer having A1-O bonds and A1-C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form A1-N, A1-H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH 3 , H 2 , N 2 , and mixtures thereof. A dielectric diffusion barrier layer is then deposited.

公开(公告)号：EP2259303B1

公开(公告)日：2018-09-19

申请号：EP10164594.3

申请日：2010-06-01

申请人： Novellus Systems, Inc.

发明人： Yu, Jengyi ,  Wu, Hui-Jung ,  Dixit, Girish ,  Van Schravendijk, Bart ,  Subramonium, Pramod ,  Jiang, Gengwei ,  Antonelli, George Andrew ,  O`Loughlin, Jennifer

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/76834 ,  H01L21/02074 ,  H01L21/76832 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76888

摘要： Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing A1, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu-O bonds is contacted with trimethylaluminum to form a precursor layer having A1-O bonds and A1-C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form A1-N, A1-H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH 3 , H 2 , N 2 , and mixtures thereof. A dielectric diffusion barrier layer is then deposited.

公开(公告)号：EP2259303A2

公开(公告)日：2010-12-08

申请号：EP10164594.3

申请日：2010-06-01

申请人： Novellus Systems, Inc.

发明人： Yu, Jengyi ,  Wu, Hui-Jung ,  Dixit, Girish ,  Van Schravendijk, Bart ,  Subramonium, Pramod ,  Jiang, Gengwei ,  Antonelli, George Andrew ,  O`Loughlin, Jennifer

IPC分类号： H01L21/768

CPC分类号： H01L21/76834 ,  H01L21/02074 ,  H01L21/76832 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76888

摘要： Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing A1, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu-O bonds is contacted with trimethylaluminum to form a precursor layer having A1-O bonds and A1-C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form A1-N, A1-H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH 3 , H 2 , N 2 , and mixtures thereof. A dielectric diffusion barrier layer is then deposited.

摘要翻译： 使用位于金属线和电介质扩散阻挡层（或蚀刻停止）层之间的界面处的粘合层来改善互连的电迁移性能。 通过在暴露的铜线上沉积含金属材料的前体层（例如含有Al，Ti，Ca，Mg等的材料）并将前体层转化为钝化层（例如，氮化层 ）。 例如，含有暴露的Cu-O键的暴露的铜线的基板与三甲基铝接触以在铜表面上形成具有A1-O键和A1-C键的前体层。 然后处理前体层以除去残留的有机取代基并形成A1-N，A1-H键或两者。 处理可以包括直接等离子体处理，远程等离子体处理，UV处理和用诸如NH 3，H 2，N 2的气体及其混合物的热处理。 然后沉积介电扩散阻挡层。