公开(公告)号：EP1333482A2

公开(公告)日：2003-08-06

申请号：EP03250583.6

申请日：2003-01-30

申请人： Osaka Prefecture ,  Hosiden Corporation

发明人： Izumi, Katsutoshi ,  Nakao, Motoi ,  Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Hirai, Seisaku ,  Jobe, Fumihiko ,  Tanaka, Tomoyuki

IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/205 ,  C23C16/02 ,  C23C16/32 ,  H01L21/324

CPC分类号： H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

摘要： [Purpose] A single crystal silicon carbide thin film is inexpensively and easily formed on an SOI substrate.
[Constitution] The manufacturing method comprises the steps of:

(1) placing in a furnace 200 an SOI substrate 100 having a surface silicon layer 130 of thickness no greater than 10nm and having a buried insulator layer 120, and increasing the temperature of the atmosphere within furnace 200 while supplying a mixture of hydrogen gas G1 and hydrocarbon gas G2 into furnace 200 so that surface silicon layer 130 is metamorphosed into single crystal silicon carbide thin film 140;
(2) depositing a carbon thin film 150 on thin film 140 by excessively carrying out the first step;
(3) replacing mixed gas (G1+G2) with an inert gas G4 containing oxygen gas G3 mixed in a predetermined ratio and heating SOI substrate 100 to no less than 550°C to remove carbon thin film 150 through etching;
(4) replacing inert gas G4 containing oxygen gas G3 with a pure inert gas G4 and increasing the temperature of the atmosphere within furnace 200 to a predetermined temperature; and
(5) supplying hydrogen gas G1 and a silane-based gas G5 into furnace 200 and maintaining the predetermined temperature of the atmosphere so that a new single crystal silicon carbide thin film 160 grows on the surface of said SOI substrate 100.

摘要翻译： [目的]的单晶碳化硅薄膜是在SOI衬底的廉价且容易地形成。 [构成]的制造方法，包括以下步骤：（1）放置在炉200上的SOI衬底100，其具有厚度不大于10nm的表面硅层130和具有掩埋绝缘体层120，并增加环境的温度 炉200内，同时氢气G1和烃气G2的混合物供给到炉200所以没表面硅层130被变态为单晶碳化硅薄膜140; （2）通过过度进行第一步上的薄膜140上沉积碳薄膜150; （3）用惰性气体置换的混合气体（G1 + G2），以氧气气体G3 G4包含混合在一个比预定的加热和SOI衬底100至不小于550℃，通过蚀刻以去除碳薄膜150; （4）替换惰性气体G4含氧气体G3与纯惰性气体G4和炉200内增加气氛的温度到预定的温度; 和（5）供给氢气G1和硅烷类气体G5入炉200和维护的气氛的预定温度，以便做一个新的单晶碳化硅薄膜160生长的SOI衬底的表面上的所述第100个

公开(公告)号：EP1333482B1

公开(公告)日：2008-06-25

申请号：EP03250583.6

申请日：2003-01-30

申请人： OSAKA PREFECTURE ,  HOSIDEN CORPORATION

发明人： Izumi, Katsutoshi ,  Nakao, Motoi ,  Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Hirai, Seisaku ,  Jobe, Fumihiko ,  Tanaka, Tomoyuki

IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/205 ,  C23C16/02 ,  C23C16/32 ,  H01L21/324

CPC分类号： H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

公开(公告)号：EP1333482A3

公开(公告)日：2006-02-01

申请号：EP03250583.6

申请日：2003-01-30

申请人： OSAKA PREFECTURE ,  HOSIDEN CORPORATION

发明人： Izumi, Katsutoshi ,  Nakao, Motoi ,  Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Hirai, Seisaku ,  Jobe, Fumihiko ,  Tanaka, Tomoyuki

IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/205 ,  C23C16/02 ,  C23C16/32 ,  H01L21/324

CPC分类号： H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

摘要： [Purpose] A single crystal silicon carbide thin film is inexpensively and easily formed on an SOI substrate.
[Constitution] The manufacturing method comprises the steps of:

(1) placing in a furnace 200 an SOI substrate 100 having a surface silicon layer 130 of thickness no greater than 10nm and having a buried insulator layer 120, and increasing the temperature of the atmosphere within furnace 200 while supplying a mixture of hydrogen gas G1 and hydrocarbon gas G2 into furnace 200 so that surface silicon layer 130 is metamorphosed into single crystal silicon carbide thin film 140;
(2) depositing a carbon thin film 150 on thin film 140 by excessively carrying out the first step;
(3) replacing mixed gas (G1+G2) with an inert gas G4 containing oxygen gas G3 mixed in a predetermined ratio and heating SOI substrate 100 to no less than 550°C to remove carbon thin film 150 through etching;
(4) replacing inert gas G4 containing oxygen gas G3 with a pure inert gas G4 and increasing the temperature of the atmosphere within furnace 200 to a predetermined temperature; and
(5) supplying hydrogen gas G1 and a silane-based gas G5 into furnace 200 and maintaining the predetermined temperature of the atmosphere so that a new single crystal silicon carbide thin film 160 grows on the surface of said SOI substrate 100.