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1.发明公开SILICON OXIDE AND NEGATIVE-ELECTRODE MATERIAL FOR A LITHIUM-ION SECONDARY BATTERY 审中-公开SILICON OXIDE AND负极材料的锂离子二次电池
公开(公告)号：EP2445038A4
公开(公告)日：2013-08-14
申请号：EP10789144
申请日：2010-04-21
Applicant: OSAKA TITANIUM TECHNOLOGIES CO
Inventor： KIZAKI SHINGO
IPC: H01M4/48 , C01B33/113 , H01M4/04 , H01M4/13 , H01M4/134 , H01M4/485 , H01M10/0525
CPC classification number: H01M4/485 , C01B33/113 , H01M4/134 , H01M10/0525 , Y02E60/122
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2.发明公开POWDER FOR LITHIUM ION SECONDARY BATTERY NEGATIVE ELECTRODE MATERIAL, LITHIUM ION SECONDARY BATTERY NEGATIVE ELECTRODE AND CAPACITOR NEGATIVE ELECTRODE, AND LITHIUM ION SECONDARY BATTERY AND CAPACITOR 审中-公开粉负极材料用于锂二次电池离子，负电极用于锂二次电池离子，负电极电容器和锂离子二次电池，电容器
公开(公告)号：EP2597708A4
公开(公告)日：2014-08-06
申请号：EP11809423
申请日：2011-07-08
Applicant: OSAKA TITANIUM TECHNOLOGIES CO
Inventor： YASUDA KOUJI , KIZAKI SHINGO , SHIMOSAKI SHINJI
CPC classification number: H01M4/134 , H01G9/0425 , H01G11/06 , H01G11/30 , H01M4/131 , H01M4/366 , H01M4/485 , H01M4/625 , Y02E60/122 , Y02E60/13
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3.发明公开POWDER FOR LITHIUM ION SECONDARY BATTERY NEGATIVE ELECTRODE MATERIAL, LITHIUM ION SECONDARY BATTERY NEGATIVE ELECTRODE, CAPACITOR NEGATIVE ELECTRODE, LITHIUM ION SECONDARY BATTERY, AND CAPACITOR 审中-公开粉负极材料用于锂二次电池离子，负电极用于锂二次电池离子，负电极电容器，锂离子二次电池和电容
公开(公告)号：EP2581970A4
公开(公告)日：2014-02-26
申请号：EP11795367
申请日：2011-06-03
Applicant: OSAKA TITANIUM TECHNOLOGIES CO
Inventor： YASUDA KOUJI , KIZAKI SHINGO , SHIMOSAKI SHINJI
IPC: H01M4/131 , H01G9/04 , H01G11/06 , H01G11/42 , H01G11/50 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/36 , H01M10/052
CPC classification number: H01M4/134 , H01G11/06 , H01G11/42 , H01G11/50 , H01M4/131 , H01M4/1391 , H01M4/1395 , H01M4/36 , H01M4/38 , H01M10/052 , Y02E60/13
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Patent Agency Ranking4.发明公开SiO DEPOSITION MATERIAL, RAW MATERIAL Si POWDER, AND METHOD FOR PRODUCING SiO DEPOSITION MATERIAL 有权SIO沉积材料，Si原料粉末原料及其制备方法SIO分离材料
公开(公告)号：EP1795624A4
公开(公告)日：2009-07-22
申请号：EP05770381
申请日：2005-08-09
Applicant: OSAKA TITANIUM TECHNOLOGIES CO
Inventor： NISHIOKA KAZUO , KIZAKI SHINGO
IPC: C23C14/24 , C01B33/037 , C01B33/113
CPC classification number: C01B33/113 , C23C14/10
Abstract: Disclosed is an SiO deposition material characterized by having a hydrogen gas content of not more than 50 ppm. By using such an SiO deposition material, occurrence of splash can be suppressed when SiO is deposited on a base, and there can be formed an SiO deposited film which is excellent in transparency and barrier properties. By carrying out degasification so that the hydrogen gas content of a raw material Si powder for the deposition material is not more than 10 ppm, the SiO deposition material having a hydrogen gas content of not more than 50 ppm can be produced highly efficiently at low cost. Consequently, this method for producing SiO can be widely applied to methods for producing deposition materials for packaging materials which have transparency and barrier properties and are used for foods, medical products, medicinal products and the like.
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5.发明公开NEGATIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION SECONDARY BATTERY 审中-公开NEGATIVELEKTRODEN-AKTIVMATERIAL献给LITHIUMIONEN，SEKUNDÄRBATTERIEN
公开(公告)号：EP2492995A4
公开(公告)日：2014-04-30
申请号：EP10824610
申请日：2010-10-04
Applicant: OSAKA TITANIUM TECHNOLOGIES CO
Inventor： KANNO HIDEAKI , KIZAKI SHINGO
IPC: H01M4/48 , C01B33/113 , H01M4/02 , H01M4/36 , H01M4/485
CPC classification number: H01M4/485 , C01P2002/82 , H01M4/134 , H01M4/386 , H01M10/0525 , H01M2004/021
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公开(公告)号：EP2477260A4
公开(公告)日：2013-08-21
申请号：EP10815089
申请日：2010-06-17
Applicant: OSAKA TITANIUM TECHNOLOGIES CO
Inventor： KIZAKI SHINGO , KANNO HIDEAKI
IPC: H01M4/48 , C01B33/113 , H01M4/13 , H01M4/131 , H01M4/134 , H01M4/485 , H01M10/0525
CPC classification number: H01M4/485 , C01B33/113 , H01M4/131 , H01M4/134 , H01M10/0525
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7.发明公开SiO POWDER FOR SECONDARY BATTERY AND PROCESS FOR PRODUCING THE SAME 有权SIO-PULVERFÜREINESEKUNDÄRBATTERIEUND HERSTELLUNGSPROZESSDAFÜR
公开(公告)号：EP1783847A4
公开(公告)日：2011-05-25
申请号：EP05743902
申请日：2005-05-27
Applicant: OSAKA TITANIUM TECHNOLOGIES CO
Inventor： KIZAKI SHINGO , NISHIOKA KAZUO
IPC: H01M4/04 , H01M4/131 , H01M4/1395 , H01M4/48 , H01M4/485 , H01M4/50 , H01M4/505 , H01M4/52 , H01M4/525 , H01M10/052 , H01M10/36
CPC classification number: H01M4/485 , H01M4/0471 , H01M4/131 , H01M4/1395 , H01M4/405 , H01M4/463 , H01M4/505 , H01M4/525 , H01M10/052 , H01M2004/028
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8.发明公开SiO DEPOSITION MATERIAL, Si POWDER FOR SiO RAW MATERIAL, AND METHOD FOR PRODUCING SiO 审中-公开SIO沉积材料，SI粉SIO原材料及其制造方法SIO
公开(公告)号：EP1792874A4
公开(公告)日：2009-07-22
申请号：EP05770377
申请日：2005-08-09
Applicant: OSAKA TITANIUM TECHNOLOGIES CO
Inventor： KIZAKI SHINGO , NISHIOKA KAZUO
IPC: C01B33/113 , C23C14/24
CPC classification number: C01B33/113 , C23C14/10
Abstract: Disclosed is SiO or an SiO deposition material characterized by having a hydrogen gas content of not less than 120 ppm. Also disclosed is an SiO deposition material characterized by having a hydrogen gas content of not less than 150 ppm. By using such materials, the film forming rate can be increased when SiO is deposited on a base, thereby efficiently forming an SiO deposited film. By setting the hydrogen gas content of a raw material Si powder to 30 ppm or higher, the sublimation rate can be increased when SiO is produced, thereby efficiently producing it at low cost. Consequently, this method for producing SiO can be widely applied to methods for producing deposition materials for packaging materials having transparency and barrier properties which are used for foods, medical products, medicinal products and the like, and methods for producing deposition materials for electrode materials of lithium batteries having an SiO deposited film.
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