摘要:
In at least one embodiment of the lamp (1), said lamp comprises at least one optoelectronic semiconductor component (2), which during operation with at least one first wavelength (L1) and at least one second wavelength (L2) emits electromagnetic radiation, wherein the first wavelength (L1) and the second wavelength (L2) differ from each other and are below 500 nm, in particular between 200 nm and 500 nm. The lamp (1) furthermore comprises at least one conversion means (3), which converts the first wavelength (L1) at least partially into radiation having a different frequency. The radiation spectrum emitted by the lamp (1) during operation is metameric with respect to a black body spectrum. Using such a lamp, it is possible to select the first wavelength and the second wavelength such that at the same time a high color rendition quality and high efficiency of the lamp can be achieved.
摘要:
Disclosed is a radiation receptor (1) comprising a semiconductor body (2) that has a first active region (210) and a second active region (220) which are used for detecting radiation. The first active region (210) and the second active region (220) are located at a distance from each other in a vertical direction. A tunnel region (24) is arranged between the first active region (210) and the second active region (220). The tunnel region (24) is connected in an electrically conducting manner to a connecting surface (31) which is used for externally contacting the semiconductor body (2) in an electrical manner between the first active region (210) and the second active region (220). A method for producing a radiation receptor is also disclosed.
摘要:
An optoelectronic arrangement (1) comprises a power light emitting diode (10) and an adjusting light emitting diode (20). A first radiation (SL) can be emitted with a first emission spectrum (EL) from the first power light emitting diode (10). A second radiation (SE) with a second emission spectrum (EE) can be emitted from the adjusting light emitting diode (20). An overall radiation (SO) of the optoelectronic arrangement (1) comprises the first radiation (SL) and the second radiation (SE).
摘要:
A radiation detector is disclosed, for the detection of radiation (8), with a given spectral sensitivity distribution (9), which has a maximum at a given wavelength λo, comprising a semiconductor body (1) with an active region (5), provided for detector signal generation and for the incident radiation. In one embodiment, the active region (5) comprises a number of functional layers (4a, 4b, 4c, 4d), with differing band gaps and/or thicknesses and embodied such that said layers (4a, 4b, 4c, 4d) at least partly absorb radiation at a wavelength greater than λo. In a further embodiment, a filter layer structure (70) is arranged after the active region, comprising at least one filter layer (7, 7a, 7b, 7c). The filter layer structure determines the short wave side (101) of the detector sensitivity (10), according to the given spectral sensitivity distribution (9), by means of absorption of wavelengths less than λo. A radiation detector for the detection of radiation (8), according to the spectral sensitivity distribution (9) of the human eye is also disclosed. The semiconductor body can be monolithically integrated.
摘要:
The invention relates to a radiation emitting semi-conductor element with a semi-conductor body, comprising a first main surface (5), a second main surface (9) and a semi-conductor layer sequence (4) with an active zone (7) generating electromagnetic radiation. The semi-conductor layer sequence (4) is arranged between the first and the second main surface (5,9), a first current expansion layer (3) is arranged on the first main surface (5) and is joined in an electrically conducting manner to the semi-conductor layer sequence (4) and a second current expansion layer (10) is arranged on the second main surface (9) and is joined in an electrically conducting manner to the semi-conductor layer sequence (4).