公开(公告)号：EP2011142A2

公开(公告)日：2009-01-07

申请号：EP07722283.4

申请日：2007-04-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HÄRLE, Volker ,  STRAUSS, Uwe ,  BRÜDERL, Georg ,  EICHLER, Christoph ,  AVRAMESCU, Adrian

IPC: H01L21/18 ,  H01L21/20 ,  H01L21/762 ,  H01L31/0248

Abstract: A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).

公开(公告)号：EP2011142B1

公开(公告)日：2020-07-15

申请号：EP07722283.4

申请日：2007-04-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HÄRLE, Volker ,  STRAUSS, Uwe ,  BRÜDERL, Georg ,  EICHLER, Christoph ,  AVRAMESCU, Adrian

IPC: H01L21/762 ,  H01L31/18 ,  H01L33/00

公开(公告)号：EP1911103B1

公开(公告)日：2016-08-31

申请号：EP06775767.4

申请日：2006-07-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： AVRAMESCU, Adrian ,  HÄRLE, Volker ,  HÖPPEL, Lutz ,  PETER, Matthias ,  SABATHIL, Matthias ,  STRAUSS, Uwe

IPC: H01L33/04 ,  H01S5/343 ,  H01S5/34 ,  H01L33/06 ,  H01L33/32 ,  H01S5/30 ,  H01S5/32

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2009 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3202 ,  H01S5/3407 ,  H01L2924/00

公开(公告)号：EP1911103A1

公开(公告)日：2008-04-16

申请号：EP06775767.4

申请日：2006-07-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： AVRAMESCU, Adrian ,  HÄRLE, Volker ,  HÖPPEL, Lutz ,  PETER, Matthias ,  SABATHIL, Matthias ,  STRAUSS, Uwe

IPC: H01L33/00 ,  H01S5/343 ,  H01S5/34

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2009 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3202 ,  H01S5/3407 ,  H01L2924/00

Abstract: The application relates to an optoelectronic semiconductor chip (20) comprising the following sequence of regions in a growth direction (σ) of the semiconductor chip (20): - a p-doped barrier layer (1), for an active region (2), - the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and - an n-doped barrier layer (3) for the active region (2). The application furthermore relates to a component comprising such a semiconductor chip (20) and to a method for producing such a semiconductor chip (20).

Abstract translation: 本申请涉及一种光电子半导体芯片（20），包括在半导体芯片（20）的生长方向（σ）上的以下顺序的区域： - 用于有源区域（2）的p掺杂阻挡层（1） ， - 适于产生电磁辐射的有源区（2），有源区基于六方晶系化合物半导体，以及 - 用于有源区（2）的n掺杂阻挡层（3）。 本申请还涉及包括这种半导体芯片（20）的组件以及用于制造这种半导体芯片（20）的方法。