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公开(公告)号：EP1800353B1
公开(公告)日：2015-10-14
申请号：EP05774738.8
申请日：2005-08-04
发明人： BRUNNER, Herbert , EISSLER, Dieter , HAHN, Berthold , HÄRLE, Volker , JÄGER, Harald , KRÄUTER, Gertrud , WAITL, Günter
IPC分类号： H01L33/50
CPC分类号： H01L33/508 , H01L2933/0041
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公开(公告)号：EP2548221A2
公开(公告)日：2013-01-23
申请号：EP11706823.9
申请日：2011-03-07
发明人： KRÄUTER, Gertrud
IPC分类号： H01L23/06
CPC分类号： H01L33/60 , H01L23/06 , H01L33/486 , H01L33/56 , H01L51/5237 , H01L51/5271 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014
摘要： The invention relates to an optoelectronic component comprising a housing (1) having a duroplast, a recess (2) in the housing (1), a radiation-emitting component (3) arranged in the recess (2), wherein the duroplast comprises a material that is selected from: aminoplast-duroplast, urea duroplast, melamine formaldehyde duroplast, moist polyester duroplasts, bulk molded compounds, polyester resin, phenol resin, vinylester resin, and wherein the optoelectronic component has an injection point (4).
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3.发明公开
公开(公告)号：EP2122696A1
公开(公告)日：2009-11-25
申请号：EP08706793.0
申请日：2008-01-23
发明人： BRAUNE, Bert , KRÄUTER, Gertrud
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L33/483 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： The invention described relates to an arrangement, and to a method for the production of such an arrangement, which serves for generating mixed light. For this purpose, a semiconductor chip emitting electromagnetic primary radiation has a luminescence conversion element in the beam path of the primary radiation. The arrangement further comprises a connecting element and a carrier element, wherein the carrier element supports and forms the luminescence conversion element and the connecting element.
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4.发明授权REFLEKTIERENDES SCHICHTSYSTEM MIT EINER MEHRZAHL VON SCHICHTEN ZUR AUFBRINGUNG AUF EIN III/V-VERBINDUNGSHALBLEITERMATERIAL 有权映含分层损伤NUMBER层体系：施用于III / V族化合物半导体材料
公开(公告)号：EP1769540B1
公开(公告)日：2009-09-23
申请号：EP05761634.4
申请日：2005-06-29
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method for producing a reflective layer system and to a reflective layer system that is to be applied to a III-V compound semiconductor material (4). According to said method, a first layer (1), which contains phosphosilicate glass is applied directly to the semiconductor substrate (4). A second layer (2) containing silicon nitride then covers the first layer and finally a metallic layer (3) is applied.
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公开(公告)号：EP1440481B1
公开(公告)日：2007-09-19
申请号：EP02776861.3
申请日：2002-10-28
IPC分类号： H01L33/00 , H01L31/0203
CPC分类号： H01L33/486 , H01L33/483 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： The invention concerns an optoelectronic component, in particular an optoelectronic component adapted to be surface-mounted, comprising a housing body (2), an optoelectronic semiconductor chip (3) arranged in particular in a recess (6) of the housing body, and electrical connections (1A, 1B), the semiconductor chip being in electroconductive connection with the electrical connections of the conductor network. The housing body (2) is made of a sheathing material, in particular a plastic material, filled with a filler material having a high degree of reflection in a wavelength range less than about 500 nm.
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6.发明公开REFLEKTIERENDES SCHICHTSYSTEM MIT EINER MEHRZAHL VON SCHICHTEN ZUR AUFBRINGUNG AUF EIN III/V-VERBINDUNGSHALBLEITERMATERIAL 有权映含分层损伤NUMBER层体系：施用于III / V族化合物半导体材料
公开(公告)号：EP1769540A1
公开(公告)日：2007-04-04
申请号：EP05761634.4
申请日：2005-06-29
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method for producing a reflective layer system and to a reflective layer system that is to be applied to a III-V compound semiconductor material (4). According to said method, a first layer (1), which contains phosphosilicate glass is applied directly to the semiconductor substrate (4). A second layer (2) containing silicon nitride then covers the first layer and finally a metallic layer (3) is applied.
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公开(公告)号：EP2548221B1
公开(公告)日：2018-08-01
申请号：EP11706823.9
申请日：2011-03-07
发明人： KRÄUTER, Gertrud
CPC分类号： H01L33/60 , H01L23/06 , H01L33/486 , H01L33/56 , H01L51/5237 , H01L51/5271 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014
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公开(公告)号：EP2705546A1
公开(公告)日：2014-03-12
申请号：EP12714268.5
申请日：2012-03-28
发明人： KRÄUTER, Gertrud
IPC分类号： H01L33/56 , H01L21/312 , H01L21/02 , C09D183/16 , H01L33/50
摘要： The invention relates to an optoelectronic semiconductor component comprising: at least one radiation emitting semiconductor chip (2) which has a radiation decoupling surface (22), through which at least one part of the electromagnetic radiation generated in the semiconductor chip (2) leaves the semiconductor chip (2); at least one radiation-permeable body (3), downstream at least at points of the semiconductor chip (2) on the radiation decoupling surface (22) thereof, which is in at least indirect contact with the semiconductor chip (2), wherein the radiation-permeable body (3) is formed with at least one polymer or comprises at least one polymer, and one monomer of the polymer is formed having at least one silazane.
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公开(公告)号：EP2548222A2
公开(公告)日：2013-01-23
申请号：EP11707165.4
申请日：2011-03-07
发明人： KRÄUTER, Gertrud
CPC分类号： F21V29/15 , H01L23/06 , H01L33/486 , H01L33/56 , H01L2224/48091 , H01L2933/0033 , Y10T29/49002 , H01L2924/00014
摘要： The invention relates to an optoelectronic component comprising a housing (1) which has a first partial area (2) with a first thermoplast, a second partial area (3) with a second thermoplast, a recess in the housing, a radiation-emitting component (4) arranged in the recess, characterized in that the first thermoplast was cross-linked by radiation.
摘要翻译： 本发明涉及一种包括壳体（1）的光电子部件，壳体（1）具有带第一热塑性塑料的第一部分区域（2），带有第二热塑性塑料的第二部分区域（3），壳体中的凹部，辐射发射部件 （4）布置在所述凹部中，其特征在于，所述第一热塑性塑料通过辐射交联。
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