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1.发明公开P-CHANNEL POWER MIS FIELD EFFECT TRANSISTOR AND SWITCHING CIRCUIT 审中-公开P-沟道功率MIS FELLDEFFEKTTRANSISTOR和交换网络
公开(公告)号：EP1628337A8
公开(公告)日：2006-10-18
申请号：EP04745284.2
申请日：2004-05-24
申请人： OHMI, Tadahiro , YAZAKI CORPORATION
IPC分类号： H01L21/336 , H01L29/78 , H01L21/316 , H01L21/304
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734
摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
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2.发明公开P-channel power MIS field effect transistor and switching circuit 审中-公开P-Kanal-Strom-MIS-Feldeffekttransistor和Schaltkreis
公开(公告)号：EP2166565A3
公开(公告)日：2010-07-07
申请号：EP09075556.2
申请日：2004-05-24
申请人： Ohmi, Tadahiro , Yazaki Corporation
IPC分类号： H01L21/336 , H01L29/78 , H01L21/316 , H01L21/304
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734
摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要翻译： 在形成在基本上为（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。
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公开(公告)号：EP2166565A2
公开(公告)日：2010-03-24
申请号：EP09075556.2
申请日：2004-05-24
申请人： Ohmi, Tadahiro , Yazaki Corporation
IPC分类号： H01L21/336 , H01L29/78 , H01L21/316 , H01L21/304
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734
摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要翻译： 在形成于实质上具有（110）面的硅面上的P沟道功率MIS型场效应晶体管中，使用提供10V以上的栅极/源极间耐压的栅极绝缘膜，并使硅表面 ，或者包含Kr，Ar或Xe。
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4.发明公开P-CHANNEL POWER MIS FIELD EFFECT TRANSISTOR AND SWICHING CIRCUIT 审中-公开P-KANAL-LEISTUNGS-MIS-FELLDEFFEKTTRANSISTOR UND SCHALTNETZWERK
公开(公告)号：EP1628337A1
公开(公告)日：2006-02-22
申请号：EP04745284.2
申请日：2004-05-24
申请人： OHMI, Tadahiro , YAZAKI CORPORATION
IPC分类号： H01L21/336 , H01L29/78 , H01L21/316 , H01L21/304
CPC分类号： H01L29/7813 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L29/045 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66734
摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
摘要翻译： 在形成在基本上为（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。
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