公开(公告)号：EP1628337A8

公开(公告)日：2006-10-18

申请号：EP04745284.2

申请日：2004-05-24

申请人： OHMI, Tadahiro ,  YAZAKI CORPORATION

发明人： Ohmi, Tadahiro ,  Teramoto, Akinobu ,  AKAHORI, Hiroshi ,  Nii, Keiichi ,  Watanabe, Takanori

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/316 ,  H01L21/304

CPC分类号： H01L29/7813 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66734

摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.

公开(公告)号：EP2166565A3

公开(公告)日：2010-07-07

申请号：EP09075556.2

申请日：2004-05-24

申请人： Ohmi, Tadahiro ,  Yazaki Corporation

发明人： Ohmi, Tadahiro ,  Teramoto, Akinobu ,  Akahori, Hiroshi ,  Nii, Keiichi ,  Watanabe, Takanori

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/316 ,  H01L21/304

CPC分类号： H01L29/7813 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66734

摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.

摘要翻译： 在形成在基本上为（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。

公开(公告)号：EP2166565A2

公开(公告)日：2010-03-24

申请号：EP09075556.2

申请日：2004-05-24

申请人： Ohmi, Tadahiro ,  Yazaki Corporation

发明人： Ohmi, Tadahiro ,  Teramoto, Akinobu ,  Akahori, Hiroshi ,  Nii, Keiichi ,  Watanabe, Takanori

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/316 ,  H01L21/304

CPC分类号： H01L29/7813 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66734

摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.

摘要翻译： 在形成于实质上具有（110）面的硅面上的P沟道功率MIS型场效应晶体管中，使用提供10V以上的栅极/源极间耐压的栅极绝缘膜，并使硅表面 ，或者包含Kr，Ar或Xe。

公开(公告)号：EP1628337A1

公开(公告)日：2006-02-22

申请号：EP04745284.2

申请日：2004-05-24

申请人： OHMI, Tadahiro ,  YAZAKI CORPORATION

发明人： Ohmi, Tadahiro ,  Teramoto, Akinobu ,  AKAHORI, Hiroshi ,  Nii, Keiichi ,  Watanabe, Takanori

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/316 ,  H01L21/304

CPC分类号： H01L29/7813 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66734

摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.

摘要翻译： 在形成在基本上为（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。

公开(公告)号：EP1848039B1

公开(公告)日：2010-03-31

申请号：EP07015129.5

申请日：2002-12-10

申请人： Ohmi, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： Ohmi, Tadahiro ,  Koji, Kotani ,  Shigetoshi, Sugawa

IPC分类号： H01L27/092

CPC分类号： H01L29/045 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/66795 ,  H01L29/7851

公开(公告)号：EP1448029A3

公开(公告)日：2010-01-27

申请号：EP04007880.0

申请日：1993-08-13

申请人： HAMAMATSU PHOTONICS K.K. ,  Ohmi, Tadahiro

发明人： Ohmi, Tadahiro ,  Inaba, Hitoshi ,  Ikedo, Tomoyuki

IPC分类号： H05F3/06 ,  H01L21/02 ,  H01L21/68 ,  A01G7/00 ,  E04H5/02

CPC分类号： H05F3/06

摘要： A transfer apparatus having a transfer chamber for transferring an object to be processed to a processing apparatus, characterized in that an electromagnetic wave in a soft X-ray region can be irradiated to an athmospheric gas in the transfer chamber.

公开(公告)号：EP2028577A2

公开(公告)日：2009-02-25

申请号：EP08006286.2

申请日：2000-04-03

申请人： Fujikin Incorporated ,  TOKYO ELECTRON LIMITED ,  Ohmi, Tadahiro

发明人： Ohmi, Tadahiro ,  Kagatsume, Satoshi ,  Sugiyama, Kazuhiko ,  Minami, Yukio ,  Nishino, Kouji ,  Dohi, Ryousuke ,  Yonehana, Katsunori ,  Ikeda, Nobukazu ,  Yamaji, Michio ,  Hirose, Jun ,  Fukazawa, Kazuo ,  Koizumi, Hiroshi ,  Nagaoka, Hideki ,  Morimoto, Akihiro ,  Uno, Tomio ,  Ideta, Eiji ,  Matsumoto, Atsushi ,  Uenoyama, Toyomi ,  Hirose, Takashi

IPC分类号： G05D7/06

CPC分类号： G05D7/0658 ,  G05D7/0664 ,  Y10S438/935 ,  Y10T137/0396 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/86389 ,  Y10T137/87877 ,  Y10T137/87917

摘要： A fluid supply apparatus with a plurality of flow lines branching out from one regulator for adjustment of pressure, the flow lines being arranged in parallel, wherein a measure is taken that the operation, that is, opening or closing of one flow passage will have no transient effect on the steady flow of the other flow passages, For this purpose, each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time Δt from the starting point.
Also provided are a method and an apparatus for the above in which a plurality of gas types can be controlled in flow rate with high precision by one pressure-type flow control system. To that end, a formula for calculating the flow rate of a gas is theoretically derived that flows with a pressure ratio not higher than the critical pressure ratio. From that formula, the flow factor is defined, so that the formula may be applied to a number of gas types using flow factors

摘要翻译： 用的流线从一个调节器，用于压力调整分支出来的多个流体供给装置中，流线平行地布置，worin的量度取，DASS模具手术，也就是，开口或一个流路的开闭将没有 在其它流动通道的稳流瞬态效应，为了这个目的，每个流动通道设置有一个时间延迟型质量流量控制器MFC所以没有当一个封闭流体通道打开时，质量流量控制器上没有流动通道河段 一组流量Qs在从起点的特定延迟时间“t。 这样提供了一种方法和用于其中的气体类型的多元性可与精度高流速通过一个压力式流量控制装置来控制上述装置的速率。为了做到端，用于计算气体的流动的公式 理论上推导做了与压力比不低于临界压力比更高流动。 从做过公式，则流程因数被定义，所以没式可使用流动因素来应用于多种气体类型

公开(公告)号：EP1720197A1

公开(公告)日：2006-11-08

申请号：EP06016997.6

申请日：2001-07-10

申请人： ALPS ELECTRIC CO., LTD. ,  OHMI, Tadahiro

发明人： Ohmi, Tadahiro ,  Nakano, Akira

IPC分类号： H01J37/32 ,  C23C16/509 ,  C23C16/52

CPC分类号： H01J37/32091 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32165 ,  H01J37/32174

摘要： A plasma processing apparatus includes a plasma processing chamber (CN) having a plasma excitation electrode (4) for exciting a plasma, a radiofrequency generator (1) for supplying a radiofrequency voltage to the electrode, a radiofrequency feeder (3) connected to the electrode, and a matching circuit (2A) having an input end (PR3) and an output end (PR). The input end is connected to the radiofrequency generator and the output end is connected to an end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. A frequency which is three times a first series resonant frequency f 0 of the plasma processing chamber which is measured at the end of the radiofrequency feeder is larger than a power frequency f e of the radiofrequency waves.

摘要翻译： 一种等离子体处理装置包括：具有用于激发等离子体的等离子体激励电极（4）的等离子体处理室（CN），向该电极供给射频电压的射频发生器（1）;与该电极连接的射频馈送器 ，以及具有输入端（PR3）和输出端（PR）的匹配电路（2A）。 输入端连接到射频发生器，输出端连接到射频馈线的一端，以实现等离子体处理室与射频发生器之间的阻抗匹配。 在射频馈送器末端测量的等离子体处理室的第一串联谐振频率f 0的三倍的频率大于射频波的功率频率f e。

公开(公告)号：EP1427003A3

公开(公告)日：2005-03-02

申请号：EP03027739.6

申请日：2003-12-02

申请人： OHMI, Tadahiro

发明人： Ohmi, Tadahiro ,  Sugawa, Shigetoshi ,  Teramoto, Akinobu ,  Akahori, Hiroshi ,  Nii, Keiichi

IPC分类号： H01L21/306 ,  H01L21/336

CPC分类号： H01L21/3185 ,  H01L21/30604 ,  H01L21/31654 ,  H01L21/318 ,  H01L29/6659

摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15nm, preferably, 0.09nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H 2 O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

公开(公告)号：EP1486711A2

公开(公告)日：2004-12-15

申请号：EP04021884.4

申请日：1997-12-01

申请人： FUJIKIN Inc. ,  Tohoku Steel Co., Ltd ,  OHMI, Tadahiro ,  TAKAHASHI, Migaku

发明人： Ohmi, Tadahiro ,  Takahashi, Migaku ,  Yamaji, Michio ,  Tanigawa, Takeshi ,  Ikeda, Nobukazu ,  Doi, Ryosuke ,  Nishino, Koji ,  Yasumoto, Naofumi ,  Fukuda, Hiroyuki ,  Uno, Tomio ,  Yanai, Yasuyuki

IPC分类号： F16K31/06

CPC分类号： F16K31/082 ,  F16K7/14 ,  F16K31/0655 ,  F16K31/0672 ,  Y10T137/8242

摘要： The invention relates to a fluid control valve which controls a fluid moving through a valve body (121) by means of opening and closing a portion between a valve seat (112) and a valve holder (126) using a drive unit (28), wherein:

said drive unit (28) comprises a rod shaped shaft (108) for applying pressure via said valve holder (126) and a valve rod (109), and a member a (104) which is affixed around said rod shaped shaft (108),
said member a (104) comprises a magnetic material, and
a coil (102) having a space between it and the shaft and provided at a position parallel to said shaft (108) moves said member a (104) upwardly and downwardly by electromagnetic induction, and using the force of a spring (115), thereby opening and closing the portion between said valve seat (112) and said valve holder (126), and
a means is provided for adjusting a gap G between said coil (102) and said member a (104).

摘要翻译： 本发明涉及一种流体控制阀，其通过使用驱动单元（28）打开和关闭阀座（112）和阀保持器（126）之间的部分来控制流过阀体（121）的流体， 其特征在于：所述驱动单元（28）包括用于经由所述阀保持器（126）和阀杆（109）施加压力的杆形轴（108），以及围绕所述杆形轴 108），所述构件a（104）包括磁性材料，并且在平行于所述轴（108）的位置处设置有在所述轴和轴之间具有空间的线圈（102），所述构件a（104）向上和向下移动 通过电磁感应，并且使用弹簧（115）的力，从而打开和关闭所述阀座（112）和所述阀保持器（126）之间的部分，并且设置一个装置，用于调节所述线圈 102）和所述构件a（104）。