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1.发明公开
公开(公告)号：EP4255157A1
公开(公告)日：2023-10-04
申请号：EP23160329.1
申请日：2023-03-07
发明人： FURUTA, Hironori , KOSAKA, Toru , SUZUKI, Takahito , TANIGAWA, Kenichi , ISHIKAWA, Takuma , KITAJIMA, Yutaka , KONISHI, Akio , KANAMORI, Hiroaki , IIZUKA, Takeshi
IPC分类号： H10N30/076 , B06B1/06 , H10N30/00 , H10N30/853 , H10N30/87
摘要： An object is to increase the performance of a piezoelectric film integrated device by providing two or more types of monocrystalline piezoelectric films on the same substrate. A piezoelectric film integrated device includes a substrate (33), a first electrode (34a) provided on the substrate (33), a second electrode (34b) provided on the substrate (33), a monocrystalline PZT film as a first monocrystalline piezoelectric film (15) provided on the first electrode (34a), a monocrystalline AlN film as a second monocrystalline piezoelectric film (25) provided on the second electrode (34b) and having a crystal structure different from a crystal structure of the first monocrystalline piezoelectric film (15), a third electrode (16) provided on the first monocrystalline piezoelectric film (15), and a fourth electrode (26) provided on the second monocrystalline piezoelectric film (25) .
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2.发明公开
公开(公告)号：EP4255158A1
公开(公告)日：2023-10-04
申请号：EP23160335.8
申请日：2023-03-07
发明人： FURUTA, Hironori , KOSAKA, Toru , SUZUKI, Takahito , TANIGAWA, Kenichi , ISHIKAWA, Takuma , KITAJIMA, Yutaka , KONISHI, Akio , KANAMORI, Hiroaki , IIZUKA, Takeshi
IPC分类号： H10N30/076 , B06B1/06 , H10N30/00 , H10N30/853 , H10N30/87
摘要： An object is to increase the performance of a piezoelectric film integrated device by providing two or more types of monocrystalline piezoelectric films on the same substrate. A piezoelectric film integrated device (100)-includes a substrate (33), an electrode (34) that is provided on the substrate (33), a first piezoelectric element that is provided on the electrode (34) and includes a first monocrystalline piezoelectric film (25 or 15) and a first electrode film (26 or 16) superimposed on the first monocrystalline piezoelectric film (25 or 15), and a second piezoelectric element that is provided on the first piezoelectric element and includes a second monocrystalline piezoelectric film (15 or 25) and a second electrode film (16 or 26) superimposed on the second monocrystalline piezoelectric film (15 or 25).
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3.发明公开
公开(公告)号：EP4391781A1
公开(公告)日：2024-06-26
申请号：EP21966350.7
申请日：2021-11-30
IPC分类号： H10N30/853 , H10N30/06 , H10N35/01 , H10N30/076
CPC分类号： H10N30/076 , H10N30/079 , H10N30/853 , H10N30/708
摘要： According to the present invention, there is provided a film structure including: a substrate; a zirconia-containing film; a sacrificial layer; and a piezoelectric film in this order, in which the substrate, the zirconia-containing film, the sacrificial layer, and the piezoelectric film are each single-crystallized, and the sacrificial layer is able to be selectively removed, a method for producing the film structure, and an apparatus for producing the film structure.
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公开(公告)号：EP4270505A1
公开(公告)日：2023-11-01
申请号：EP21914921.8
申请日：2021-03-26
发明人： KONISHI, Akio , KANAMORI, Hiroaki , ANDO, Akira , HONDA, Yuuji
IPC分类号： H01L41/047 , H01L41/09 , H01L41/113 , H01L41/187 , H03H9/17
摘要： A membrane structure (10) includes: a substrate being a Si substrate or an SOI substrate; a buffer film containing ZrO 2 and formed on the substrate; and a piezoelectric film (11) formed on the buffer film, a polarization direction in the piezoelectric film (11) being preferentially oriented parallel to the substrate.
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