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    SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SAME AND ALIPHATIC POLYCARBONATE
    4.
    发明公开
    SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SAME AND ALIPHATIC POLYCARBONATE 有权
    HALBLEITERBAUEMENT，VERFAHREN ZUR HERSTELLUNG DAVON UND ALIPHATIS​​CHES POLYCARBONAT

    公开(公告)号：EP3086360A1

    公开(公告)日：2016-10-26

    申请号：EP14871269.8

    申请日：2014-12-16

    申请人： Japan Advanced Institute of Science and Technology ,  Sumitomo Seika Chemicals Co., Ltd.

    发明人： INOUE, Satoshi ,  SHIMODA, Tatsuya ,  FUJIMOTO, Nobutaka ,  NISHIOKA, Kiyoshi ,  KARASHIMA, Shuichi

    IPC分类号： H01L21/336 ,  C08G64/02 ,  H01L21/28 ,  H01L29/786

    摘要： It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment. An exemplary method for producing a thin film transistor according to the invention includes an aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layer 50 that covers a gate electrode layer 40 disposed above a semiconductor layer 20 with a gate insulator 30 being interposed between the gate electrode layer 40 and the semiconductor layer 20, and also covers the semiconductor layer 20, and has a dopant causing the semiconductor layer 20 to become an n-type or p-type semiconductor layer, and a heating step of heating at a temperature causing introduction of the dopant into the semiconductor layer 20 and decomposition of the aliphatic polycarbonate layer 50.

    摘要翻译： 本发明的目的是提供一种薄膜晶体管及其制造方法，其可以容易地实现源极/漏极区域的自对准形成，而无需通过真空或低压下的工艺或不使用 昂贵的设备。 根据本发明的制造薄膜晶体管的示例性方法包括：脂肪族聚碳酸酯层形成步骤，形成脂肪族聚碳酸酯层50，其覆盖设置在半导体层20上方的栅电极层40，栅极绝缘体30插入在栅极 电极层40和半导体层20，并且还覆盖半导体层20，并且具有使半导体层20成为n型或p型半导体层的掺杂剂，以及在导致引入的温度下加热的加热步骤 的掺杂剂进入半导体层20中并分解脂族聚碳酸酯层50。