公开(公告)号：EP3199670A1

公开(公告)日：2017-08-02

申请号：EP15855510.2

申请日：2015-10-28

申请人： Osaka University ,  Itochu Plastics Incorporated ,  National University Corporation Tokyo University of Agriculture and Technology

发明人： MORI Yusuke ,  YOSHIMURA Masashi ,  IMADE Mamoru ,  ISEMURA Masashi ,  KOUKITU Akinori

IPC分类号： C30B29/38 ,  C23C16/34 ,  C30B25/14 ,  H01L21/205 ,  H01L33/32

CPC分类号： C30B29/406 ,  C23C16/34 ,  C30B9/02 ,  C30B25/02 ,  C30B25/14 ,  C30B25/20 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/205 ,  H01L29/2003 ,  H01L33/32

摘要： To provide a method for producing a Group III element nitride crystal by growing it on a plane on the -c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane is a plane on the -c-plane side. A crystal growth temperature is 1200°C or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately -c direction.

摘要翻译： 提供一种通过在-c面侧的平面上生长III族元素氮化物晶体作为晶体生长面来制造III族元素氮化物晶体的方法。 本发明是用于制造III族元素氮化物晶体的方法，其包括通过气相沉积在III族元素氮化物晶种11的晶体生长面上生长III族元素氮化物晶体12的气相生长步骤。 气相生长步骤是使III族金属，氧化剂和含氮气体彼此反应以生长III族元素氮化物晶体12的步骤，或者包括：还原产物气体生成步骤， 使III族元素氧化物与还原性气体反应而生成III族元素氧化物的还原物的气体的工序; 和使还原生成物的气体和含氮气体反应而生成III族元素氮化物晶体12的晶体生成工序。晶体生长平面是-c面侧的面。 晶体生长温度为1200℃或更高。 在气相生长步骤中，III族元素氮化物晶体在近似-c方向上生长。