公开(公告)号：EP3199670A1

公开(公告)日：2017-08-02

申请号：EP15855510.2

申请日：2015-10-28

申请人： Osaka University ,  Itochu Plastics Incorporated ,  National University Corporation Tokyo University of Agriculture and Technology

发明人： MORI Yusuke ,  YOSHIMURA Masashi ,  IMADE Mamoru ,  ISEMURA Masashi ,  KOUKITU Akinori

IPC分类号： C30B29/38 ,  C23C16/34 ,  C30B25/14 ,  H01L21/205 ,  H01L33/32

CPC分类号： C30B29/406 ,  C23C16/34 ,  C30B9/02 ,  C30B25/02 ,  C30B25/14 ,  C30B25/20 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/205 ,  H01L29/2003 ,  H01L33/32

摘要： To provide a method for producing a Group III element nitride crystal by growing it on a plane on the -c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane is a plane on the -c-plane side. A crystal growth temperature is 1200°C or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately -c direction.

摘要翻译： 提供一种通过在-c面侧的平面上生长III族元素氮化物晶体作为晶体生长面来制造III族元素氮化物晶体的方法。 本发明是用于制造III族元素氮化物晶体的方法，其包括通过气相沉积在III族元素氮化物晶种11的晶体生长面上生长III族元素氮化物晶体12的气相生长步骤。 气相生长步骤是使III族金属，氧化剂和含氮气体彼此反应以生长III族元素氮化物晶体12的步骤，或者包括：还原产物气体生成步骤， 使III族元素氧化物与还原性气体反应而生成III族元素氧化物的还原物的气体的工序; 和使还原生成物的气体和含氮气体反应而生成III族元素氮化物晶体12的晶体生成工序。晶体生长平面是-c面侧的面。 晶体生长温度为1200℃或更高。 在气相生长步骤中，III族元素氮化物晶体在近似-c方向上生长。

公开(公告)号：EP3103899A1

公开(公告)日：2016-12-14

申请号：EP15759207.2

申请日：2015-02-26

申请人： Osaka University ,  Itochu Plastics Incorporated

发明人： MORI Yusuke ,  YOSHIMURA Masashi ,  IMADE Mamoru ,  ISEMURA Masashi ,  USUI Akira ,  SHIBATA Masatomo ,  YOSHIDA Takehiro

IPC分类号： C30B29/38 ,  C23C16/08 ,  C23C16/34 ,  C30B19/02 ,  C30B25/20 ,  H01L21/205 ,  H01L21/208

CPC分类号： C30B29/406 ,  B28D5/00 ,  C30B19/02 ,  C30B19/061 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/7813 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3013 ,  H01S2304/06

摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

摘要翻译： 的高品质的缺陷少的大型III族氮化物晶体：诸如失真，位错和翘曲，通过气相外延制备。 一种用于制造III族氮化物晶体方法，包括：产生第一III族氮化物晶体1003通过液相外延的第一III族氮化物晶体的生产过程; 以及在所述第一晶体1003通过气相外延在生产1004的第二III族氮化物晶体的第二III族氮化物晶体的生产过程。 在第III族氮化物晶体制造方法中，晶种1003A（预先提供III族氮化物）的表面被过度碱金属熔液接触与，III族元素和氮是引起在氮相互反应 在碱金属的熔融含氧气氛，以及III族氮化物晶体通过从籽晶生长1003A III族氮化物晶体的生长结合在一起以产生第一晶体第一千〇三

公开(公告)号：EP2796594A1

公开(公告)日：2014-10-29

申请号：EP13736325.5

申请日：2013-01-10

申请人： Osaka University

发明人： MORI Yusuke ,  IMADE Mamoru ,  YOSHIMURA Masashi ,  HIRAO Mihoko ,  IMANISHI Masayuki

IPC分类号： C30B19/02 ,  C30B29/38 ,  H01L21/208

CPC分类号： C30B19/02 ,  C30B19/12 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L29/2003 ,  H01L33/007

摘要： The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (13), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer (11) as seed crystals for generation and growth of Group III nitride crystals (13); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (13), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially coincide with each other, and in the crystal growth step, the plural Group III nitride crystals (13) grown from the plural seed crystals by the growth of the Group III nitride crystals (13) are bound.

摘要翻译： 本发明提供一种用于制造III族氮化物晶体的方法，其能够制造具有较少缺陷和高质量的大尺寸的III族氮化物晶体。 该方法是用于制造III族氮化物晶体（13）的方法，包括：晶种选择步骤，用于选择多个部分的III族氮化物晶体层（11）作为III族氮化物晶体的生成和生长的晶种（ 13）; 接触步骤，使晶种的表面与碱金属熔体接触; 晶体生长步骤，使III族元素和氮在碱金属熔体中的含氮气氛下彼此反应以生成并生长III族氮化物晶体（13），其中籽晶是六方晶体， 晶种选择步骤中，晶种排列为使得从彼此相邻的晶种生长的各个晶体的m面基本上不彼此一致，并且在晶体生长步骤中，多个第III组 通过III族氮化物晶体（13）的生长从多个晶种生长的氮化物晶体（13）被束缚。