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    METHODS FOR MAKING METALLOCENE COMPOUNDS
    2.
    发明公开
    METHODS FOR MAKING METALLOCENE COMPOUNDS 审中-公开
    VERFAHREN ZUR HERSTELLUNG冯METALLOCENVERBINDUNGEN

    公开(公告)号：EP1556395A4

    公开(公告)日：2008-02-20

    申请号：EP03810820

    申请日：2003-10-30

    申请人： PRAXAIR TECHNOLOGY INC

    发明人： THOMPSON DAVID M ,  HOOVER CYNTHIA A

    IPC分类号： C07F17/02 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/406 ,  C07F17/02 ,  C23C16/18 ,  C23C16/40 ,  C23C16/45553

    摘要： A method for producing Group 8 (VIII) metallocene or metallocene-like compounds employs a compound that includes a Cp' anion, such as found, together with a counterion, in a cyclopentadienide or cyclopentadienide-like salt. In one embodiment, the method includes reacting a metal salt, a (Cp) compound, such as a substituted or unsubstituted cyclopentadiene or indene, and a ligand (L) to form an intermediate compound and reacting the intermediate compound with a Cp' compound, eg., a cyclopentadienide or cyclopentadienide-like salt, where the metal salt can be is a ruthenium, an osmium or an iron halide or nitrate and L is an electron pair donor. Unsubstituted, mono-substituted as well as symmetrically or asymmetrically di- or multi-substituted metallocenes or metallocene-like compounds can be produced. In another embodiment, unsubstituted or symmetrically substituted metallocenes are formed by reacting MX2(PPh3)m with a Cp' compound, where m = 3 or 4. The method can be used to form precursors for chemical vapor deposition of thin films.

    摘要翻译： 用于制备第8（VIII）族茂金属或茂金属类化合物的方法使用包含Cp'阴离子的化合物，例如在环戊二烯或环戊二烯类盐中与抗衡离子一起发现。 在一个实施方案中，该方法包括使金属盐，（Cp）化合物如取代或未取代的环戊二烯或茚与配体（L）反应以形成中间体化合物，并使中间体化合物与Cp'化合物反应， 例如，环戊二烯或环戊二烯类盐，其中金属盐可以是钌，锇或卤化铁或硝酸盐，L是电子对供体。 可以制备未取代的，单取代的以及对称或不对称的二取代或多取代的茂金属或茂金属类化合物。 在另一个实施方案中，通过MX2（PPh3）m与Cp'化合物反应形成未取代或对称取代的金属茂，其中m = 3或4.该方法可用于形成化学气相沉积薄膜的前体。

    ASYMMETRIC GROUP 8 (VIII) METALLOCENE COMPOUNDS
    3.
    发明公开
    ASYMMETRIC GROUP 8 (VIII) METALLOCENE COMPOUNDS 审中-公开
    非对映体草甘膦-8-（VIII-）金属酞菁

    公开(公告)号：EP1556394A4

    公开(公告)日：2008-02-20

    申请号：EP03810819

    申请日：2003-10-30

    申请人： PRAXAIR TECHNOLOGY INC

    发明人： THOMPSON DAVID M ,  HOOVER CYNTHIA A

    IPC分类号： C07F17/02 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C14/14 ,  C23C14/26

    CPC分类号： C23C16/406 ,  C07F17/02 ,  C23C16/18 ,  C23C16/40 ,  C23C16/45553

    摘要： Asymmetric, disubstituted metallocene compounds have the general formula CpMCp' where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentdienyl or indenyl moiety that includes at least one substituent group D1; Cp' is a second substituted cyclopentadienyl or indenyl moiety that includes at least one substituent group D1'. D1 is different from D1'. D1 is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C=O) Ca1Hb1Xc1; or Ca2Hb2Xc2O Ca1Hb1Xc1, where X is a halogen atom or nitro group; a1 is an integer between 2 and 8; b1 is an integer between 0 and 2 (a1)+1-c1; c1 is an integer between 0 and 2 (a1) + 1 - b1; b1 + c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2 (a2) + 1 - c2; and c2 is an integer between 0 and 2 (a2) + 1 - b2; and D1' is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C=O) Ca1Hb1Xc1; or Ca2Hb2Xc2O Ca1Hb1Xc1, where X is a halogen atom or nitro group; a1 is an integer between 1 and 8; b1 is an integer between 0 and 2 (a1) +1 -c1; c1 is an integer between 0 and 2 (a1) +1 -b1; b1 + c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2 (a2) + 1 - c2; and c2 is an integer between 0 and 2 (a2) + 1 - b2. The compounds can be employed as precursors in film deposition processes.

    摘要翻译： 不对称二取代茂金属化合物具有通式CpMCp'，其中M是选自Ru，Os和Fe的金属; Cp是包含至少一个取代基D1的第一取代的环戊二烯基或茚基部分; Cp'是包含至少一个取代基D1'的第二个取代的环戊二烯基或茚基部分。 D1与D1'不同。 D1是X; Ca1Hb1Xc1; Ca2Hb2Xc2（C = O）Ca1Hb1Xc1; 或Ca2Hb2Xc2O Ca1Hb1Xc1，其中X是卤原子或硝基; a1是2和8之间的整数; b1是0和2（a1）+ 1-c1之间的整数; c1是0到2（a1）+ 1 - b1之间的整数; b1 + c1至少为1; a2是0到8之间的整数; b2是0与2（a2）+ 1-c2之间的整数; 并且c2是0和2（a2）+ 1-b2之间的整数; D1'是X; Ca1Hb1Xc1; Ca2Hb2Xc2（C = O）Ca1Hb1Xc1; 或Ca2Hb2Xc2O Ca1Hb1Xc1，其中X是卤原子或硝基; a1是1和8之间的整数; b1是0和2（a1）+1 -c1之间的整数; c1是0和2（a1）+1 -b1之间的整数; b1 + c1至少为1; a2是0到8之间的整数; b2是0与2（a2）+ 1-c2之间的整数; 并且c2是0和2（a2）+ 1-b2之间的整数。 这些化合物可以用作膜沉积工艺中的前体。