公开(公告)号：EP3229277A1

公开(公告)日：2017-10-11

申请号：EP17165342.1

申请日：2017-04-06

申请人： Palo Alto Research Center Incorporated

发明人： NORTHRUP, John E. ,  WUNDERER, Thomas ,  LU, Jeng Ping ,  JOHNSON, Noble M.

IPC分类号： H01L29/861 ,  H01L29/205 ,  H01L31/0248 ,  H01L33/32 ,  H01L33/02

CPC分类号： H01L33/0016 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/861 ,  H01L33/02 ,  H01L33/32

摘要： A polarization controlled device has a first layer comprising a group III-nitride semiconductor substrate or template; a second group III-nitride semiconductor layer disposed over the group III-nitride semiconductor substrate or template; a third group III-nitride semiconductor layer disposed over the second group III-nitride semiconductor layer; and a fourth group III-nitride semiconductor layer disposed over the third group III-nitride semiconductor layer. A pn junction is formed at an interface between the third and fourth group III-nitride semiconductor layers. A polarization heterojunction is formed between the second group III-nitride semiconductor layer and the third group III-nitride semiconductor layer. The polarization junction has fixed charges of a polarity on one side of the polarization junction and fixed charges of an opposite polarity on an opposite side of the polarization junction. When unbiased, the pn junction comprises a first electric field that opposes the flow of carriers across the pn junction and the polarization junction comprises a second electric field that opposes the flow of oppositely charged carriers across the polarization junction.

摘要翻译： 偏振受控器件具有包含III族氮化物半导体衬底或模板的第一层; 设置在III族氮化物半导体衬底或模板上的第二III族氮化物半导体层; 设置在所述第二III族氮化物半导体层上的第三III族氮化物半导体层; 以及设置在第三III族氮化物半导体层上的第四III族氮化物半导体层。 pn结形成在第三和第四III族氮化物半导体层之间的界面处。 在第二III族氮化物半导体层与第三III族氮化物半导体层之间形成极化异质结。 偏振结在偏振结的一侧上具有固定的极性电荷，而在极化结的相对侧上具有相反极性的固定电荷。 当无偏压时，pn结包括第一电场，该第一电场与穿过pn结的载流子的流动相反，并且该极化结包括第二电场，该第二电场与极化结中的相反电荷载流的流动相反。